HCC/HCF40107B
September 1988
DUAL 2-INPUT NAND BUFFER/DRIVER
.
32 TIMES STANDARD B-SERIES OUTPUT
CURRENT DRIVE SINKING CAPABILITY
136mA TYP. @ V
DD
= 10V, V
DS
= 1V
.
QUIESCENT CURRENT SPECIFIED AT 20V
FOR HCC DEVICE
.
5V, 10V, AND 15V PARAMETRIC RATINGS
.
INPUT CURRENT OF 100nA AT 18V AND 25
C
FOR HCC DEVICE
.
100% TESTED FOR QUIESCENT CURRENT
.
MEETS ALL REQUIREMENTS OF JEDEC TEN-
TATIVE STANDARD N
. 13A, "STANDARD
SPECIFICATIONS FOR DESCRIPTION OF "B"
SERIES CMOS DEVICES"
DESCRIPTION
The HCC40107B (extended temperature range)
and HCF40107B (intermediate temperature range)
are monolithic integrated circuits, available in 14-
lead dual in-line ceramic package 8-lead minidip
plastic package and 8-lead plastic micropackage.
The HCC/HCF40107B is a dual 2-input NAND buf-
fer/driver containing two independent 2-input NAND
buffers with open-drain single n-channel transistor
outputs. This device features a wired-OR capability
and high output sink current capability (136mA typ.
at V
DD
= 10V, V
DS
= 1V).
EY
(Plastic Package)
F
(Ceramic Frit Seal Package)
M1
(Micro Package)
C1
(Plastic Chip Carrier)
ORDER CODES
HCC40107BF
HCF40107BM1
HCF40107BEY
HCF40107BC1
PIN CONNECTIONS
1/14
Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for external periods may affect device reliability.
* All voltages values are referred to V
SS
pin voltage.
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Value
Unit
V
DD
Supply Voltage : H CC Types
H C F Types
3 to 18
3 to 15
V
V
V
I
Input Voltage
0 to V
DD
V
T
o p
Operating Temperature : HCC Types
H CF Types
55 to + 125
40 to + 85
C
C
FUNCTIONAL DIAGRAM
Symbol
Parameter
Value
Unit
V
DD
*
Supply Voltage : HCC types
HCF types
0.5 to + 20
0.5 to + 18
V
V
i
Input Voltage
0.5 to VDD + 0.5
V
I
I
DC Input Current (any one input)
10
mA
P
tot
Total Power Dissipation (per package)
Dissipation per Output Transistor
for T
op
= full package-temperature Range
200
100
mW
T
op
Operating Temperature : HCC types
HCF types
55 to + 125
40 to + 85
C
T
stg
Storage Temperature
65 to + 150
C
ABSOLUTE MAXIMUM RATINGS
HCC/HCF40107B
2/14
SCHEMATIC DIAGRAM AND TRUTH TABLE
* Requires external and pull-up resis-
tor (R
L
) to V
DD
.
# Without pull-up resistor (3-state).
A
B
C
0
0
1*
Z
#
1
0
1*
Z
#
0
1
1*
Z
#
1
1
0
*
T
Low
= 55
C for HCC device ; 40
C for HCF device.
*
T
High
= + 125
C for HCC device ; + 85
C for HCF device.
The Noise Margin, full package temperature range, R
L
to V
DD
= 10k
: 1V min with V
DD
= 5V, 2V min with V
DD
= 10V, 2.5V min with VDD = 15V.
** Measured with external pull-up resistor, R
L
= 10k
to V
DD
.
*** Forced output disabled.
STATIC ELECTRICAL CHARACTERISTICS (over recommended operating conditions)
Test Conditions
Value
V
I
V
O
|I
O
|
V
D D
T
L o w
*
25
C
T
Hi g h
*
Symbol
Parameter
(V)
(V)
(
A)
(V)
Min. Max. Min. Typ. Max. Min. Max.
Unit
I
L
Quiescent
Current
HCC
Types
0/ 5
5
1
0.02
1
30
A
0/10
10
2
0.02
2
60
0/15
15
4
0.02
4
120
0/20
20
20
0.04
20
600
HCF
Types
0/ 5
5
4
0.02
4
30
0/10
10
8
0.02
8
60
0/15
15
16
0.02
16
120
V
IH
**
Input High
Voltage
0.5/4.5
< 1
5
3.5
3.5
3.5
V
1/9
< 1
10
7
7
7
1.5/13.5
< 1
15
11
11
11
V
IL
**
Input Low
Voltage
4.5
< 1
5
1.5
1.5
1.5
V
9
< 1
10
3
3
3
13.5
< 1
15
4
4
4
HCC/HCF40107B
3/14
STATIC ELECTRICAL CHARACTERISTICS (continued)
Test Conditions
Val ue
V
I
V
O
|I
O
|
V
D D
T
L o w
*
2 5
C
T
Hig h
*
Symbol
Parameter
(V)
(V)
(
A)
(V)
Min. Max. Min. Typ. Max. Min. Max.
Unit
I
O L
Output
Sink
Current
HCC
Types
5
0.4
5
21
16
32
12
mA
5
1
5
44
30
68
25
10
0.5
10
49
37
74
28
10
1
10
89
68
136
51
15
0.5
15
66
50
100
38
HCF
Types
5
0.4
5
17
13.6
32
12
5
1
5
35.7
25.5
68
22
10
0.5
10
39.1
31.4
74
27
10
1
10
72.2
57.8
136
51
15
0.5
15
53.5
42.5
100
37
I
O H
Output Drive
Current
No Internal Pull-up Device
mA
I
IH
, I
IL
Input
Leakage
Current
HCC
Types
0/18
Any Input
18
0.1
10
5
0. 1
1
A
HCF
Types
0/15
15
0.3
10
5
0.3
1
I
O H
,I
O L
***
3-State
Output
Leakage
Current
HCC
Types
0/18
18
18
2
10
4
2
20
A
HCF
Types
0/15
15
15
2
10
4
2
20
C
I
Input Capacitance
Any Input
5
7.5
pF
C
O
Output
Capacitance
Any Output
30
pF
*
T
Low
= 55
C for HCC device ; 40
C for HCF device.
*
T
High
= + 125
C for HCC device ; + 85
C for HCF device.
The Noise Margin, full package temperature range, R
L
to V
DD
= 10k
: 1V min with V
DD
= 5V, 2V min with V
DD
= 10V, 2.5V min with VDD = 15V.
** Measured with external pull-up resistor, R
L
= 10k
to V
DD
.
*** Forced output disabled.
HCC/HCF40107B
4/14
DYNAMIC ELECTRICAL CHARACTERISTICS (T
amb
= 25
C, C
L
= 50pF, typical temperature
coefficient for all V
DD
values is 0.3%/
C, all input rise and fall time = 20ns)
Value
Symbol
Parameter
Test Conditions
V
D D
(V) Mi n.
Typ.
Max.
Unit
t
P HL
,
t
PL H
Propagation Delay Time
High to Low
R
L
* = 120
5
100
200
ns
10
45
90
15
30
60
Low to High
R
L
* = 120
5
100
200
ns
10
60
120
15
50
100
t
THL
,
t
TL H
Transition Time
High to Low
R
L
* = 120
5
50
100
ns
10
20
40
15
10
20
Low to High
R
L
* = 120
5
50
100
ns
10
35
70
15
25
50
* R
L
is external pull-up resistor to V
DD
.
Output Low (sink) Current Characteristics.
Typical Propagation Delay Time vs. Load Capacit-
ance.
HCC/HCF40107B
5/14
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