HCC4007UB
HCF4007UB
September 1988
DUAL COMPLEMENTARY PAIR PLUS INVERTER
EY
(Plastic Package)
ORDER CODES :
HCC4007UBF
HCF4007UBM1
HCF4007UBEY
HCF4007UBC1
F
(Ceramic Package)
M1
(Micro Package)
C1
(Chip Carrier)
PIN CONNECTIONS
DESCRIPTION
.
STANDARDIZED
SYMMETRICAL
OUTPUT
CHARACTERISTICS
.
MEDIUM SPEED OPERATION t
PHL
, t
PLH
= 30ns
(typ.) AT 10V
.
QUIESCENT CURRENT SPECIFIED TO 20V
FOR HCC DEVICE
.
INPUT CURRENT OF 100nA AT 18V AND 25
o
C
FOR HCC DEVICE
.
100% TESTED FOR QUIESCENT CURRENT
.
MEETS ALL REQUIREMENTS OF JEDEC TEN-
TATIVE STANDARD N
o
13A, "STANDARD
SPECIFICATIONS FOR DESCRIPTION OF B
SERIES CMOS DEVICES"
The HCC4007UB is a monolithic integrated circuit,
available in 14-lead dual in-line plastic or ceramic
package and plastic micropackage.
The HCC4007UB type is comprised of three n-chan-
nel and three p-channel enhancement type MOS
transistors. The transistor elements are accessible
through the package terminals to provide a conveni-
ent means for constructing the various typical cir-
cuits as shown in typical applications. More complex
functions are possible using multiple packages.
Numbers shown in parentheses indicate terminals
that are connected together to form the varius con-
figurations listed.
1/14
FUNCTIONAL DIAGRAM
ABSOLUTE MAXIMUM RATING
Symbol
Parameter
Value
Unit
V
DD
*
Supply Voltage: HCC Types
HCF Types
-0.5 to +20
-0.5 to +18
V
V
V
i
Input Voltage
-0.5 to V
DD
+ 0.5
V
I
I
DC Input Current (any one input)
10
mA
P
tot
Total Power Dissipation (per package)
Dissipation per Output Transistor
for Top = Full Package Temperature Range
200
100
mW
mW
T
op
Operating Temperature: HCC Types
HCF Types
-55 to +125
-40 to +85
o
C
o
C
T
stg
Storage Temperature
-65 to +150
o
C
Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress ratingonly and functional
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure
to absolute maximum rating conditions for external periods may affect device reliability.
* All voltage values are referred to V
SS
pin voltage.
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Value
Unit
V
DD
Supply Voltage: HCC Types
HCF Types
3 to 18
3 to 15
V
V
V
I
Input Voltage
0 to V
DD
V
T
op
Operating Temperature: HCC Types
HCF Types
-55 to +125
-40 to +85
o
C
o
C
HCC/HCF4007UB
2/14
SCHEMATIC DIAGRAM (showing input, output and parasitic diodes)
v
COS/MOS OUTPUT PROTECTION NETWORK BE-
TWEEN TERMINAL NOS. 1, 2, 4, 5, 8, 9, 11, 12, 13, AND
THE CORRESPONDING DRAINS AND/OR SOURCES
p
COS/MOS INPUT PROTECTION NETWORK
PARASITIC AND NETWORK COMPONENTS
D1 = N+ TO P WELL
D2 = P+ TO SUBSTRATE
R1 = 1 - 5 K
R2 = 15 - 30
HCC/HCF4007UB
3/14
STATIC ELECTRICAL CHARACTERISTICS (over recommended operating conditions)
Symbol
Parameter
Test Conditios
Value
Unit
V
I
(V)
V
O
(V)
|I
O
|
(
A)
V
DD
(V)
T
LOW
*
25
o
C
T
HIGH
*
Min.
Max.
Min.
Typ.
Max.
Min.
Max.
I
L
Quiescent
Current
HCC
Types
0/5
5
0.25
0.01
0.25
7.5
A
0/10
10
0.5
0.01
0.5
15
0/15
15
1
0.01
1
30
0/20
20
5
0.02
5
150
HCF
Types
0/5
5
1
0.01
1
7.5
0/10
10
2
0.01
2
15
0/15
15
4
0.01
4
30
V
OH
Output High
Voltage
0/5
< 1
5
4.95
4.95
4.95
V
0/10
< 1
10
9.95
9.95
9.95
0/15
< 1
15
14.95
14.95
14.95
V
OL
Output Low
Voltage
5/0
< 1
5
0.05
0.05
0.05
V
10/0
< 1
10
0.05
0.05
0.05
15/0
< 1
15
0.05
0.05
0.05
V
IH
Input High
Voltage
0.5/4.5
< 1
5
4
4
4
V
1/9
< 1
10
8
8
8
1.5/13.5
< 1
15
12.5
12.5
12.5
V
IL
Input Low
Voltage
4.5/0.5
< 1
5
1
1
1
V
9/1
< 1
10
2
2
2
13.5/1.5
< 1
15
2.5
2.5
2.5
I
OH
Output
Drive
Current
HCC
Types
0/5
2.5
5
-2
-1.6
-3.2
-1.15
mA
0/5
4.6
5
-0.64
-0.51
-1
-0.36
0/10
9.5
10
-1.6
-1.3
-2.6
-0.9
0/15
13.5
15
-4.2
-3.4
-6.8
-2.4
HCF
Types
0/5
2.5
5
-1.53
-1.36
-3.2
-1.1
0/5
4.6
5
-0.52
-0.44
-1
-0.36
0/10
9.5
10
-1.3
-1.1
-2.6
-0.9
0/15
13.5
15
-3.6
-3.0
-6.8
-2.4
I
OL
Output
Sink
Current
HCC
Types
0/5
0.4
5
0.64
0.51
1
0.36
mA
0/10
0.5
10
1.6
1.3
2.6
0.9
0/15
1.5
15
4.2
3.4
6.8
2.4
HCF
Types
0/5
0.4
5
0.52
0.44
1
0.36
0/10
0.5
10
1.3
1.1
2.6
0.9
0/15
1.5
15
3.6
3.0
6.8
2.4
I
IH
, I
IL
Input
Leakage
Current
HCC
Types
0/18
Any Input
18
0.1
10
-5
0.1
1
A
HCF
Types
0/15
15
0.3
10
-5
0.3
1
C
I
Input Capacitance
Any Input
5
7.5
pF
* T
LOW
= -55
o
C for HCC device: -40
o
C for HCF device.
* T
HIGH
= +125
o
C for HCC device: +85
o
C for HCF device.
The Noise Margin for both "1" and "0" level is: 1V min. with V
DD
= 5 V, 2 V min. with V
DD
= 10 V, 2.5 V min. with V
DD
= 15 V
HCC/HCF4007UB
4/14
DYNAMIC ELECTRICAL CHARACTERISTICS (T
amb
= 25
o
C, C
L
= 50 pF, R
L
= 200 K
,
typical temperature coefficent for all V
DD
values is 03 %/
o
C, all input rise and fall times= 20 ns)
Symbol
Parameter
Test Conditions
Value
Unit
V
DD
(V)
Min.
Typ.
Max.
t
PLH
t
PHL
Propagation Delay Time
5
55
110
ns
10
30
60
15
25
50
t
TLH
t
THL
Transition Time
5
100
200
ns
10
50
100
15
40
80
Minimum and Maximum Voltage Transfer Characterisctics for Inverter and test Circuit
Typical Current and Voltage Transfer Characteristics for Inverter and Test Circuit
HCC/HCF4007UB
5/14
Typical Voltage Transfer Characteristics for NAND Gate and Test Circuit
Typical Voltage Transfer Characteristics for NOR Gate and Test Circuit
Typical Output Low (Sink) Current Caracteristics
Minimum Output Low (Sink) Current Charac-
teristics
HCC/HCF4007UB
6/14
Typical Output High (Source) Current Charac-
teristics
Typical Voltage Transfer Characteristics as a
Function of Temperature
Typical Transition Time vs. Load Capacitance
Minimum Output High (Sourrce) Current Charac-
teristics
Typical Propagation Delay Time vs. Load Capa-
citance
Typical Dissipatio Per Gate vs. Frequency Char-
acteristics
HCC/HCF4007UB
7/14
TYPICAL APPLICATIONS (Sample COS/MOS logic circuit arrangements using type 4007UB)
Triple Inverters: (14, 2, 11); (8, 13); (1, 5);
(4, 7, 9).
3-Input NOR Gate: (13, 2); (1, 11); (12, 5, 8);
(4, 7, 9).
3-Input NAND Gate: (1, 12, 13); (2, 14, 11);
(4, 8); (5, 9).
High Sink Current Driver: (6, 3, 10); (8, 5, 12);
(11, 14); (4, 7, 9).
High Sink and Source Current Driver: (6, 3, 10);
(14, 2, 11); (7, 4, 9); (13, 8, 1, 5, 12).
High Source Current Driver: (6, 3, 10);
(13, 1, 12); (14, 2, 11); (7, 9).
HCC/HCF4007UB
8/14
TEST CIRCUIT
Quiescent Device Current.
Input Voltage.
Input Leakage Current.
Dual Bidirectional Trasmission Gating: (1, 5, 12); (2, 9); (11, 4); (8, 13, 10); (6, 3).
HCC/HCF4007UB
9/14
Plastic DIP14 MECHANICAL DATA
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
a1
0.51
0.020
B
1.39
1.65
0.055
0.065
b
0.5
0.020
b1
0.25
0.010
D
20
0.787
E
8.5
0.335
e
2.54
0.100
e3
15.24
0.600
F
7.1
0.280
I
5.1
0.201
L
3.3
0.130
Z
1.27
2.54
0.050
0.100
P001A
HCC/HCF4007UB
10/14
Ceramic DIP14/1 MECHANICAL DATA
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
20
0.787
B
7.0
0.276
D
3.3
0.130
E
0.38
0.015
e3
15.24
0.600
F
2.29
2.79
0.090
0.110
G
0.4
0.55
0.016
0.022
H
1.17
1.52
0.046
0.060
L
0.22
0.31
0.009
0.012
M
1.52
2.54
0.060
0.100
N
10.3
0.406
P
7.8
8.05
0.307
0.317
Q
5.08
0.200
P053C
HCC/HCF4007UB
11/14
SO14 MECHANICAL DATA
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
1.75
0.068
a1
0.1
0.2
0.003
0.007
a2
1.65
0.064
b
0.35
0.46
0.013
0.018
b1
0.19
0.25
0.007
0.010
C
0.5
0.019
c1
45
(typ.)
D
8.55
8.75
0.336
0.344
E
5.8
6.2
0.228
0.244
e
1.27
0.050
e3
7.62
0.300
F
3.8
4.0
0.149
0.157
G
4.6
5.3
0.181
0.208
L
0.5
1.27
0.019
0.050
M
0.68
0.026
S
8
(max.)
P013G
HCC/HCF4007UB
12/14
PLCC20 MECHANICAL DATA
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
9.78
10.03
0.385
0.395
B
8.89
9.04
0.350
0.356
D
4.2
4.57
0.165
0.180
d1
2.54
0.100
d2
0.56
0.022
E
7.37
8.38
0.290
0.330
e
1.27
0.050
e3
5.08
0.200
F
0.38
0.015
G
0.101
0.004
M
1.27
0.050
M1
1.14
0.045
P027A
HCC/HCF4007UB
13/14
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
HCC/HCF4007UB
14/14
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