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Электронный компонент: HCF4007UM013TR

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September 2001
s
STANDARDIZED SYMMETRICAL OUTPUT
CHARACTERISTICS
s
MEDIUM SPEED OPERATION
t
PD
= 30ns (Typ.) AT 10V
s
QUIESCENT CURRENT SPECIFIED UP TO
20V
s
5V, 10V AND 15V PARAMETRIC RATINGS
s
INPUT LEAKAGE CURRENT
I
I
= 100nA (MAX) AT V
DD
= 18V T
A
= 25C
s
100% TESTED FOR QUIESCENT CURRENT
s
MEETS ALL REQUIREMENTS OF JEDEC
JESD13B " STANDARD SPECIFICATIONS
FOR DESCRIPTION OF B SERIES CMOS
DEVICES"
DESCRIPTION
The HCF4007UB is a monolithic integrated circuit
fabricated in Metal Oxide Semiconductor
technology available in DIP and SOP packages.
The HCF4007UB type is comprised of three
n-channel and three p-channel enhancement type
MOS transistors. The transistor elements are
accessible through the package terminals to
provide a convenient means for constructing the
various typical circuits as shown in typical
applications. More complex functions are possible
using multiple packages. Number shown in
parentheses indicate terminals that are connected
together to form the various configuration listed.
HCF4007UB
DUAL COMPLEMENTARY PAIR PLUS INVERTER
PIN CONNECTION
ORDER CODES
PACKAGE
TUBE
T & R
DIP
HCF4007UBEY
SOP
HCF4007UBM1
HCF4007UM013TR
DIP
SOP
HCF4007UB
2/8
INPUT EQUIVALENT CIRCUIT
LOGIC DIAGRAM
PIN DESCRIPTION
ABSOLUTE MAXIMUM RATINGS
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied.
All voltage values are referred to V
SS
pin voltage.
RECOMMENDED OPERATING CONDITIONS
PIN No
SYMBOL
NAME AND FUNCTION
2, 11
S
P2
, S
P3
Source Connections to
2nd and 3rd p-channel
transistors
13, 1
D
P1
, D
P2
Drain Connections from
the 1st and 2nd p-channel
transistors
8, 5
D
N1
, D
N2
Drain Connections from
the 1st and 2nd n-channel
transistors
4, 9
S
N2
, S
N3
Source Connections to
the 2nd and 3rd n-channel
12
D
N/P3
Common connection to
the 3rd p-channel and
n-channel transistor
drains
6, 3, 10
G
1
to G
3
Gate connections to
n-channel and p-channel
of the three transistor
pairs
7
V
SS
Negative Supply Voltage
14
V
DD
Positive Supply Voltage
Symbol
Parameter
Value
Unit
V
DD
Supply Voltage
-0.5 to +22
V
V
I
DC Input Voltage
-0.5 to V
DD
+ 0.5
V
I
I
DC Input Current
10
mA
P
D
Power Dissipation per Package
200
mW
Power Dissipation per Output Transistor
100
mW
T
op
Operating Temperature
-55 to +125
C
T
stg
Storage Temperature
-65 to +150
C
Symbol
Parameter
Value
Unit
V
DD
Supply Voltage
3 to 20
V
V
I
Input Voltage
0 to V
DD
V
T
op
Operating Temperature
-55 to 125
C
HCF4007UB
3/8
DC SPECIFICATIONS
The Noise Margin for both "1" and "0" level is: 1V min. with V
DD
=5V, 2V min. with V
DD
=10V, 2.5V min. with V
DD
=15V
DYNAMIC ELECTRICAL CHARACTERISTICS (T
amb
= 25C, C
L
= 50pF, R
L
= 200K
, t
r
= t
f
= 20 ns)
(*) Typical temperature coefficient for all V
DD
value is 0.3 %/C.
Symbol
Parameter
Test Condition
Value
Unit
V
I
(V)
V
O
(V)
|I
O
|
(
A)
V
DD
(V)
T
A
= 25C
-40 to 85C
-55 to 125C
Min.
Typ.
Max.
Min.
Max.
Min.
Max.
I
L
Quiescent Current
0/5
5
0.01
0.25
7.5
7.5
A
0/10
10
0.01
0.5
15
15
0/15
15
0.01
1
30
30
0/20
20
0.02
5
150
150
V
OH
High Level Output
Voltage
0/5
<1
5
4.95
4.95
4.95
V
0/10
<1
10
9.95
9.95
9.95
0/15
<1
15
14.95
14.95
14.95
V
OL
Low Level Output
Voltage
5/0
<1
5
0.05
0.05
0.05
V
10/0
<1
10
0.05
0.05
0.05
15/0
<1
15
0.05
0.05
0.05
V
IH
High Level Input
Voltage
0.5/4.5
<1
5
4
4
4
V
1/9
<1
10
8
8
8
1.5/13.5
<1
15
12.5
12.5
12.5
V
IL
Low Level Input
Voltage
4.5/0.5
<1
5
1
1
1
V
9/1
<1
10
2
2
2
13.5/1.5
<1
15
2.5
2.5
2.5
I
OH
Output Drive
Current
0/5
2.5
<1
5
-1.36
-3.2
-1.15
-1.1
mA
0/5
4.6
<1
5
-0.44
-1
-0.36
-0.36
0/10
9.5
<1
10
-1.1
-2.6
-0.9
-0.9
0/15
13.5
<1
15
-3.0
-6.8
-2.4
-2.4
I
OL
Output Sink
Current
0/5
0.4
<1
5
0.44
1
0.36
0.36
mA
0/10
0.5
<1
10
1.1
2.6
0.9
0.9
0/15
1.5
<1
15
3.0
6.8
2.4
2.4
I
I
Input Leakage
Current
0/18
Any Input
18
10
-5
0.1
1
1
A
C
I
Input Capacitance
Any Input
5
7.5
pF
Symbol
Parameter
Test Condition
Value (*)
Unit
V
DD
(V)
Min.
Typ.
Max.
t
PLH
t
PHL
Propagation Delay Time
5
55
110
ns
10
30
60
15
25
50
t
TLH
t
THL
Transition Time
5
100
200
ns
10
50
100
15
40
80
HCF4007UB
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TYPICAL APPLICATIONS
TRIPLE INVERTERS : (14, 2, 11); (8,13); (1, 5);
(4, 7, 9)
3-INPUT NAND GATE : (1, 12, 13); (2, 14, 11);
(4, 8); (5, 9)
3-INPUT NOR GATE : (13, 2); (1, 11); (12, 5, 8);
(4, 7, 9)
DUAL BIDIRECTIONAL TRASMISSION
GATING :
(1, 5, 12); (2, 9); (11, 4); (8,13,10); (6, 3)
HCF4007UB
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TEST CIRCUIT
C
L
= 50pF or equivalent (includes jig and probe capacitance)
R
L
= 200K
R
T
= Z
OUT
of pulse generator (typically 50
)
WAVEFORM : PROPAGATION DELAY TIMES (f=1MHz; 50% duty cycle)
HCF4007UB
6/8
DIM.
mm.
inch
MIN.
TYP
MAX.
MIN.
TYP.
MAX.
a1
0.51
0.020
B
1.39
1.65
0.055
0.065
b
0.5
0.020
b1
0.25
0.010
D
20
0.787
E
8.5
0.335
e
2.54
0.100
e3
15.24
0.600
F
7.1
0.280
I
5.1
0.201
L
3.3
0.130
Z
1.27
2.54
0.050
0.100
Plastic DIP-14 MECHANICAL DATA
P001A
HCF4007UB
7/8
DIM.
mm.
inch
MIN.
TYP
MAX.
MIN.
TYP.
MAX.
A
1.75
0.068
a1
0.1
0.2
0.003
0.007
a2
1.65
0.064
b
0.35
0.46
0.013
0.018
b1
0.19
0.25
0.007
0.010
C
0.5
0.019
c1
45 (typ.)
D
8.55
8.75
0.336
0.344
E
5.8
6.2
0.228
0.244
e
1.27
0.050
e3
7.62
0.300
F
3.8
4.0
0.149
0.157
G
4.6
5.3
0.181
0.208
L
0.5
1.27
0.019
0.050
M
0.68
0.026
S
8 (max.)
SO-14 MECHANICAL DATA
PO13G
HCF4007UB
8/8
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