1/9
September 2001
s
20V DIGITAL OR 10V PEAK TO PEAK
SWITCHING
s
280
TYPICAL ON RESISTANCE FOR 15V
OPERATION
s
SWITCH ON RESISTANCE MATCHED TO
WITHIN 10
TYP. OVER 15V SIGNAL INPUT
RANGE
s
HIGH ON/OFF OUTPUT VOLTAGE RATIO :
65dB TYP. at f
IS
= 10KHz, R
L
= 10K
s
HIGH DEGREE OF LINEARITY : < 0.5%
DISTORTION TYP. at f
IS
= 1KHz, V
IS
= 5 V
pp
,
V
DD
- V
SS
> 10V, RL = 10K
s
EXTREMELY LOW OFF SWITCH LEAKAGE
RESULTING IN VERY LOW OFFSET
CURRENT AND HIGH EFFECTIVE OFF
RESISTANCE : 100pA TYP.
at V
DD
- V
SS
= 18V, T
amb
= 25C
s
EXTREMELY HIGH CONTROL INPUT
IMPEDANCE (control circuit isolated from
signal circuit 10
12
typ.)
s
LOW CROSSTALK BETWEEN SWITCHES :
50dB Typ. at f
IS
= 0.9MHz, R
L
= 1K
s
MATCHED CONTROL - INPUT TO SIGNAL
OUTPUT CAPACITANCE : REDUCES
OUTPUT SIGNAL TRANSIENTS
s
FREQUENCY RESPONSE SWITCH ON :
40MHz (Typ.)
s
QUIESCENT CURRENT SPECIF. UP TO 20V
s
5V, 10V AND 15V PARAMETRIC RATINGS
s
INPUT LEAKAGE CURRENT
I
I
= 100nA (MAX) AT V
DD
= 18V T
A
= 25C
s
100% TESTED FOR QUIESCENT CURRENT
s
MEETS ALL REQUIREMENTS OF JEDEC
JESD13B " STANDARD SPECIFICATIONS
FOR DESCRIPTION OF B SERIES CMOS
DEVICES"
DESCRIPTION
The HCF4016B is a monolithic integrated circuit
fabricated in Metal Oxide Semiconductor
technology available in DIP and SOP packages.
The HCF4016B is a QUAD BILATERAL SWITCH
intended for the transmission or multiplexing of
analog or digital signals.
Each of the four independent bilateral switches
has a single control signal input which
simultaneously biases both the p and n device in a
given switch ON or OFF.
HCF4016B
QUAD BILATERAL SWITCH
PIN CONNECTION
ORDER CODES
PACKAGE
TUBE
T & R
DIP
HCF4016BEY
SOP
HCF4016BM1
HCF4016M013TR
DIP
SOP
HCF4016B
2/9
INPUT EQUIVALENT CIRCUIT
PIN DESCRIPTION
TRUTH TABLE
FUNCTIONAL DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied.
All voltage values are referred to V
SS
pin voltage.
PIN No
SYMBOL
NAME AND FUNCTION
1, 4, 8, 11
A to D I/O
Independent Inputs/Out-
puts
2, 3, 9, 10
A to D O/I
Independent Outputs/
Inputs
13, 5, 6, 12
CONTROL
A to D
Enable Inputs
7
V
SS
Negative Supply Voltage
14
V
DD
Positive Supply Voltage
CONTROL
SWITCH FUNCTION
H
ON
L
OFF
Symbol
Parameter
Value
Unit
V
DD
Supply Voltage
-0.5 to +22
V
V
I
DC Input Voltage
-0.5 to V
DD
+ 0.5
V
I
I
DC Input Current
10
mA
P
D
Power Dissipation per Package
200
mW
Power Dissipation per Output Transistor
100
mW
T
op
Operating Temperature
-55 to +125
C
T
stg
Storage Temperature
-65 to +150
C
HCF4016B
3/9
RECOMMENDED OPERATING CONDITIONS
DC SPECIFICATIONS
Symbol
Parameter
Value
Unit
V
DD
Supply Voltage
3 to 20
V
V
I
Input Voltage
0 to V
DD
V
T
op
Operating Temperature
-55 to 125
C
Symbol
Parameter
Test Condition
Value
Unit
V
C
=
V
DD
V
SS
(V)
V
DD
(V)
T
A
= 25C
-40 to 85C
-55 to 125C
Min.
Typ.
Max.
Min.
Max.
Min.
Max.
I
L
Quiescent Device
Current (all
switches ON or all
switches OFF)
5
0.01
0.25
7.5
7.5
A
10
0.01
0.5
15
15
15
0.01
1
30
30
20
0.02
5
150
150
SWITCH
R
ON
Resistance
R
L
=
10K
+7.5
-7.5
+7.5
200
400
600
600
-7.5
200
400
600
600
0.25
280
850
1230
1230
+5
-5
+5
250
660
840
840
- 5
250
660
840
840
0.25
580
2000
2380
2380
+15
0
+ 15
200
400
520
520
+0.25
200
400
520
520
+ 9.3
300
800
1080
1080
+10
0
+ 10
250
660
840
840
+0.25
250
660
840
840
+ 5.6
560
2000
2380
2380
ON
Resistance
RON
(between any 2 of
4 switches)
R
L
=
10K
+7.5
-7.5
7.5
10
+5
-5
5
15
Input or Output Leakage
Current Switch OFF
(effective off resistance)
V
DD
+15
V
C
=
V
SS
0
10
-5
0.3
1
1
A
C
I
Input Capacitance
V
CC
= V
SS
= -5
+5
4
pF
C
O
Output
Capacitance
4
C
IO
Feedthrough
0.2
CONTROL (V
C
)
V
TH
Switch Threshold
Voltage
I
IS
= 10
A
5
2.25
1
1
V
10
4.5
2
2
15
6.75
2
2
I
I
Input Current
V
IS
< V
DD
18
10
-5
0.1
1
1
A
C
I
Input Capacitance
5
7.5
pF
HCF4016B
4/9
DYNAMIC ELECTRICAL CHARACTERISTICS (T
amb
= 25C, C
L
= 50pF, all input square wave rise and
fall time = 20 ns )
(
)
Symmetrical about OV
Parameter
Test Condition
Value
Unit
V
C
(V)
R
L
(K
)
f
I
(KHz)
V
I
(V)
V
SS
(V)
V
DD
(V)
Min.
Typ.
Max.
Propagation Delay
Time (signal input to
output)
= V
DD
10
10sq.
Wave
GND
5
40
100
ns
10
20
50
15
15
40
Crosstalk Between
any 2 of 4 Switches (f
at -50dB)
20 log 10 V
O(B)
/V
I(A)
= -50dB
V
C(A)
= V
DD
= +5
V
C(B)
= V
SS
=
-5
1
V
I(A)
=5p-p
0.9
MHz
Feedthrough(switch
OFF)
at 20 log 10 V
O
/V
I
=
-50dB
= V
DD
= + 5
1
5p-p
5
1.25
MHz
Frequency Response
Switch"ON" (sine
wave input) at
20 log 10 V
O
/V
I
=-3dB
= V
SS
= - 5
1
-5p-p
-5
40
MHz
Sine Wave Distortion
= V
DD
= 5
10
1
5p-p
-5
0.4
%
CONTROL (V
C
)
Propagation Delay
Time (turn on control
to output)
V
DD
- V
SS
(sq. wave)
1
V
DD
or
V
SS
5
V
DD
- V
SS
=
10V
35
70
ns
10
20
40
15
15
30
Max. Allowable Con-
trol Input Repetition
Rate
10 (sq. wave)
1
V
DD
GND
10
10
MHz
Crosstalk (control
Input to signal output)
10 (sq. wave)
10
GND
10
50
mV
HCF4016B
5/9
TYPICAL "ON" RESISTANCE CHARACTERISTICS, T
amb
= 25C
* Variation from a perfect switch, R
ON
= 0
TEST CIRCUIT
C
L
= 50pF or equivalent (includes jig and probe capacitance)
R
L
= 200K
R
T
= Z
OUT
of pulse generator (typically 50
)
Characteristics*
Supply Conditions
Load Conditions
RL = 1K
RL = 10K
RL = 100K
V
DD
(V)
V
SS
(V)
Value
(
)
V
is
(V)
Value
(
)
V
is
(V)
Value
(
)
V
is
(V)
R
ON
+ 15
0
200
+ 15
200
+ 15
180
+ 15
200
0
200
0
200
0
R
ON
(max.)
+ 15
0
300
+ 11
300
+ 9.3
300
+ 9.2
R
ON
+ 10
0
290
+ 10
250
+ 10
240
+ 10
290
0
250
0
300
0
R
ON
(max.)
+ 10
0
500
+ 7.4
560
+ 5.6
610
+ 5.5
R
ON
+ 5
0
860
+ 5
470
+ 5
450
+ 5
600
0
580
0
800
0
R
ON
(max.)
+ 5
0
1.7K
+ 4.2
7K
+ 2.9
33K
+ 2.7
R
ON
+ 2.5
- 2.5
590
+ 2.5
450
+ 2.5
490
+ 2.5
720
- 2.5
520
- 2.5
520
- 2.5
R
ON
(max.)
+ 2.5
- 2.5
232K
0.25
300K
0.25
870K
0.25
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