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Электронный компонент: HCF4512BM1

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HCC4512B
HCF4512B
8CHANNEL DATA SELECTOR
DESCRIPTION
.
3-STATE OUTPUT
.
STANDARDIZED
SYMMETRICAL
OUTPUT
CHARACTERISTICS
.
QUIESCENT CURRENT SPECIFIED TO 20V
FOR HCC DEVICE
.
5V, 10V, AND 15V PARAMETRIC RATINGS
.
INPUT CURRENT OF 100nA AT 18V AND 25
C
FOR HCC DEVICE
.
100% TESTED FOR QUIESCENT CURRENT
.
MEETS ALL REQUIREMENTS OF JEDEC TEN-
TATIVE STANDARD No. 13A, "STANDARD
SPECIFICATIONS FOR DESCRIPTION OF "B"
SERIES CMOS DEVICES"
June 1989
The HCC4512B (extended temperature range) and
HCF4512B (intermediate temperature range) are
monolithic integrated circuit, available in 16-lead
dual in-line plastic or ceramic package and plastic
micro package.
The HCC/HCF4512B is an 8-channel data selector
featuring a three-state output that can interface di-
rectly with, and drive, data lines of bus-oriented sys-
tems.
EY
(Plastic Package)
F
(Ceramic Package)
ORDER CODES :
HCC4512BF
HCF4512BM1
HCF4512BEY
HCF4512BC1
PIN CONNECTIONS
C1
(Chip Carrier)
M1
(Micro Package)
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FUNCTIONAL DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
DD
*
Supply Voltage : HC C Types
H C F Types
0.5 to + 20
0.5 to + 18
V
V
V
i
Input Voltage
0.5 to V
DD
+ 0.5
V
I
I
DC Input Current (any one input)
10
mA
P
t o t
Total Power Dissipation (per package)
Dissipation per Output Transistor
for T
o p
= Full Package-temperature Range
200
100
mW
mW
T
o p
Operating Temperature : HCC Types
H CF Types
55 to + 125
40 to + 85
C
C
T
s t g
Storage Temperature
65 to + 150
C
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Value
Unit
V
DD
Supply Voltage : HC C Types
H CF Types
3 to + 18
3 to + 15
V
V
V
I
Input Voltage
0 to V
DD
V
T
o p
Operating Temperature : HCC Types
H CF Types
55 to + 125
40 to + 85
C
C
Stresses above those listed under "Absolute Maximum Ratings may cause permanent ddamage to the device. This is a stress rating only
and functionnal operation of the device at these or any other conditions above those indicated in the operationale sections of this specifica-
tion is not implied. Exposure to absolute maximum rating conditions for external periods may affect device reliability.
* All voltage values are refered to V
SS
pin voltage.
HCC/HFC4512B
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TRUTH TABLE
Sel. Cont.
A
B
C
I nh.
3-State Di sabl e
Sel. Output
0
0
0
0
0
D0
1
0
0
0
0
D1
0
1
0
0
0
D2
1
1
0
0
0
D3
0
0
1
0
0
D4
1
0
1
0
0
D5
0
1
1
0
0
D6
1
1
1
0
0
D7
X
X
X
1
0
0
X
X
X
X
1
High Z
1 = High Level
0 = Low Level
X = Don't Care
LOGIC DIAGRAMS
HCC/HCF4512B
3/12
STATIC ELECTRICAL CHARACTERISTICS (over recommended operating conditions)
Test Conditions
Value
V
I
V
O
|I
O
|
V
D D
T
L o w
*
25
C
T
Hi g h
*
Symbol
Parameter
(V)
(V)
(
A)
(V)
Min. Max. Min. Typ. Max. Min. Max.
Unit
I
L
Quiescent
Current
HCC
Types
0/ 5
5
5
0.04
5
150
A
0/10
10
10
0.04
10
300
0/15
15
20
0.04
20
600
0/20
20
100
0.08
100
3000
HCF
Types
0/ 5
5
20
0.04
20
150
0/10
10
40
0.04
40
300
0/15
15
80
0.04
80
600
V
O H
Output High
Voltage
0/ 5
< 1
5
4.95
4.95
4.95
V
0/10
< 1
10
9.95
9.95
9.95
0/15
< 1
15
14.95
14.95
14.95
V
O L
Output Low
Voltage
5/0
< 1
5
0.05
0.05
0.05
V
10/0
< 1
10
0.05
0.05
0.05
15/0
< 1
15
0.05
0.05
0.05
V
IH
Input High
Voltage
0.5/4.5
< 1
5
3.5
3.5
3.5
V
1/9
< 1
10
7
7
7
1.5/13.5
< 1
15
11
11
11
V
IL
Input Low
Voltage
4.5/0.5
< 1
5
1.5
1.5
1.5
V
9/1
< 1
10
3
3
3
13.5/1.5
< 1
15
4
4
4
I
O H
Output
Drive
Current
HCC
Types
0/ 5
2.5
5
2
1.6 3.2
1.15
mA
0/ 5
4.6
5
0.64
0.51 1
0.36
0/10
9.5
10
1.6
1.3 2.6
0.9
0/15
13.5
15
4.2
3.4 6.8
2.4
HCF
Types
0/ 5
2.5
5
1.53
1.36 3.2
1.1
0/ 5
4.6
5
0.52
0.44 1
0.36
0/10
9.5
10
1.3
1.1 2.6
0.9
0/15
13.5
15
3.6
3.0 6.8
2.4
I
O L
Output
Sink
Current
HCC
Types
0/ 5
0.4
5
0.64
0.51
1
0.36
mA
0/10
0.5
10
1.6
1.3
2.6
0.9
0/15
1.5
15
4.2
3.4
6.8
2.4
HCF
Types
0/ 5
0.4
5
0.52
0.44
1
0.36
0/10
0.5
10
1.3
1.1
2.6
0.9
0/15
1.5
15
3.6
3.0
6.8
2.4
I
IH
, I
IL
Input
Leakage
Current
HCC
Types
0/18
Any Input
18
0.1
10
5
0.1
1
A
HCF
Types
0/15
15
0.3
10
5
0.3
1
I
O max
3-State
Output
Leakage
Current
HCC
Types
0/18
0/18
18
0.4
10
4
0.4
12
A
HCF
Types
0/18
0/18
18
1.0
10
4
1.0
7.5
C
I
Input Capacitance
Any Input
5
7.5
pF
* T
Low
= 55
C for HCC device : 40
C for HCF device.
* T
High
= + 125
C for HCC device : + 85
C for HCF device.
The Noise Margin for both "1" and "0" level is : 1V min. with V
DD
= 5V, 2V min. with V
DD
= 10V, 2.5 V min. with V
DD
= 15V.
HCC/HFC4512B
4/12
DYNAMIC ELECTRICAL CHARACTERISTICS (T
amb
= 25
C, C
L
= 50pF, R
L
= 200k
,
typical temperature coefficient for all V
DD
values is 0.3%/
C, all input rise and fall time = 20ns)
Test Conditions
Val ue
Symbol
Parameter
V
D D
(V)
Min.
Typ.
Max.
Unit
t
PHL
,
t
P L H
Propagation Delay Time Inhibit
to Output
5
140
280
ns
10
70
140
15
50
100
t
PHL
,
t
P L H
Propagation Delay Time "A"
Select to Output
5
200
400
ns
10
85
170
15
60
120
t
PHL
,
t
P L H
Propagation Delay Time
Data to Output
5
180
360
ns
10
75
150
15
55
110
t
PZ L
, t
P L Z
t
P HZ
, t
P ZH
3-state Disable Delay Time
5
60
120
ns
10
30
60
15
20
40
t
T HL
,
t
T L H
Transition Time
5
100
200
ns
10
50
100
15
40
80
Minimum Output Low (sink) Current Charac-
teristics.
Typical Output Low (sink) Current Characteristics.
HCC/HCF4512B
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