74V1T07
SINGLE BUFFER (OPEN DRAIN)
October 1999
s
HIGH SPEED: t
PD
= 4.7 ns (TYP.) at V
CC
= 5V
s
LOW POWER DISSIPATION:
I
CC
= 1
A (MAX.) at T
A
= 25
o
C
s
COMPATIBLE WITH TTL OUTPUTS:
V
IH
= 2V (MIN), V
IL
= 0.8V (MAX)
s
POWER DOWN PROTECTION ON INPUT
s
OPERATING VOLTAGE RANGE:
V
CC
(OPR) = 4.5V to 5.5V
s
IMPROVED LATCH-UP IMMUNITY
DESCRIPTION
The 74V1T07 is an advanced high-speed CMOS
SINGLE BUFFER (OPEN DRAIN) fabricated with
sub-micron silicon gate and double-layer metal
wiring C
2
MOS technology.
The internal circuit is composed of 2 stages
including buffer output, which provide high noise
immunity and stable output.
Power down protection is provided on input and 0
to 7V can be accepted on input with no regard to
the supply voltage. This device can be used to
interface 5V to 3V.
PIN CONNECTION AND IEC LOGIC SYMBOLS
ORDER CODE:
74V1T07S
74V1T07C
S
(SOT23-5L)
C
(SC-70)
1/7
INPUT EQUIVALENT CIRCUIT
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Val ue
Unit
V
CC
Supply Voltage
-0.5 to +7.0
V
V
I
DC Input Voltage
-0.5 to +7.0
V
V
O
DC Output Voltage
-0.5 to V
CC
+ 0.5
V
I
IK
DC Input Diode Current
- 20
mA
I
OK
DC Output Diode Current
20
mA
I
O
DC Output Current
25
mA
I
CC
or I
GND
DC V
CC
or Ground Current
50
mA
T
stg
Storage Temperature
-65 to +150
o
C
T
L
Lead Temperature (10 sec)
260
o
C
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these condition is not implied.
TRUTH TABLE
A
Y
L
L
H
Z
Z = High impedance
PIN DESCRIPTION
PI N No
SYMBOL
NAME AND FUNCT ION
1
N.C.
Not Connected
2
1A
Data Input
4
1Y
Data Output
3
GND
Ground (0V)
5
V
CC
Positive Supply Voltage
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Valu e
Uni t
V
CC
Supply Voltage
4.5 to 5.5
V
V
I
Input Voltage
0 to 5.5
V
V
O
Output Voltage
0 to V
CC
V
T
op
Operating Temperature
-40 to +85
o
C
dt/dv
Input Rise and Fall Time (see note 3) (V
CC
= 5.0
0.5V)
0 to 20
ns/V
1)V
IN
from0.8V to 2 V
74V1T07
2/7
CAPACITIVE CHARACTERISTICS
Symb ol
Parameter
T est Cond ition s
Val ue
Un it
T
A
= 25
o
C
-40 to 85
o
C
Min.
Typ .
Max.
Min .
Max.
C
IN
Input Capacitance
4
10
10
pF
C
OUT
Output Capacitance
5
pF
C
PD
Power Dissipation
Capacitance (note 1)
9
pF
1) C
PD
isdefined as the value of the IC'sinternal equivalent capacitance which is calculated fromthe operating current consumption without load. (Referto
Test Circuit).Average operating current can be obtained by the following equation. I
CC
(opr) = C
PD
V
CC
f
IN
+ I
CC
AC ELECTRICAL CHARACTERISTICS (Input t
r
= t
f
=3 ns)
Symb ol
Parameter
Test Co nditi on
Val ue
Un it
V
CC
(*)
(V)
C
L
(pF )
T
A
= 25
o
C
-40 to 85
o
C
Min.
Typ .
Max.
Min .
Max.
t
PLZ
t
PZL
Propagation Delay
Time
5.0
15
3.3
4.5
1.0
5.4
ns
5.0
50
4.7
6.1
1.0
7.1
(*) Voltage range is 5V
0.5V
DC SPECIFICATIONS
Symb ol
Parameter
T est Cond ition s
Val ue
Un it
V
CC
(V)
T
A
= 25
o
C
-40 to 85
o
C
Min.
Typ .
Max.
Min .
Max.
V
IH
High Level Input
Voltage
4.5 to 5.5
2
2
V
V
IL
Low Level Input
Voltage
4.5 to 5.5
0.8
0.8
V
V
OL
Low Level Output
Voltage
4.5
I
O
=50
A
0.0
0.1
0.1
V
4.5
I
O
=8 mA
0.36
0.44
I
OZ
High Impedance
Output Leakage
Current
5.5
V
I
= V
IH
or V
IL
V
O
= V
CC
or GND
0.25
2.5
A
I
I
Input Leakage Current
0 to 5.5
V
I
= 5.5V or GND
0.1
1.0
A
I
CC
Quiescent Supply
Current
5.5
V
I
= V
CC
or GND
1
10
A
I
CC
Additional Worst Case
Supply Current
5.5
One Input at 3.4V,
other input at V
CC
or
GND
1.35
1.5
mA
74V1T07
3/7
TEST CIRCUIT
WAVEFORM: PROPAGATION DELAYS (f=1MHz; 50% duty cycle)
C
L
= 15/50 pF or equivalent (includes jig and probe capacitance)
R
L
= R
1
= 1K
or equivalent
R
T
= Z
OUT
of pulse generator (typically 50
)
74V1T07
4/7
DIM.
mm
mils
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
0.90
1.45
35.4
57.1
A1
0.00
0.15
0.0
5.9
A2
0.90
1.30
35.4
51.2
b
0.35
0.50
13.7
19.7
C
0.09
0.20
3.5
7.8
D
2.80
3.00
110.2
118.1
E
2.60
3.00
102.3
118.1
E1
1.50
1.75
59.0
68.8
L
0.35
0.55
13.7
21.6
e
0.95
37.4
e1
1.9
74.8
SOT23-5L MECHANICAL DATA
74V1T07
5/7
DIM.
mm
mils
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
0.80
1.10
31.5
43.3
A1
0.00
0.10
0.0
3.9
A2
0.80
1.00
31.5
39.4
b
0.15
0.30
5.9
11.8
C
0.10
0.18
3.9
7.1
D
1.80
2.20
70.9
86.6
E
1.80
2.40
70.9
94.5
E1
1.15
1.35
45.3
53.1
L
0.10
0.30
3.9
11.8
e
0.65
25.6
e1
1.3
51.2
SC-70 MECHANICAL DATA
74V1T07
6/7
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMi croelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMi croelectronics products
are not authorized for use as critical components in life support devices or systems withoutexpress written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
1999 STMicroelectronics Printed in Italy All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco
Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.
http://www.st.com
.
74V1T07
7/7
PDF 
ZIP