N-CHANNEL 400V 0.46 OHM 10A TO-220 POWERMESH II MOSFET
1/8
April 2003
IRF740
N-CHANNEL 400V - 0.46
- 10A TO-220
PowerMESHTMII MOSFET
(1)I
SD
10A, di/dt
120A/s, V
DD
V
(BR)DSS
, T
j
T
JMAX.
s
TYPICAL R
DS
(on) = 0.46
s
EXCEPTIONAL dv/dt CAPABILITY
s
100% AVALANCHE TESTED
s
LOW GATE CHARGE
s
VERY LOW INTRINSIC CAPACITANCES
DESCRIPTION
The PowerMESHTMII is the evolution of the first gen-
eration of MESH OVERLAYTM. The layout refine-
ments introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
APPLICATIONS
s
HIGH-EFFICIENCY DC-DC CONVERTERS
s
UPS AND MOTOR CONTROL
ABSOLUTE MAXIMUM RATINGS
(
q
) Pulse width limited by safe operating area
Note: NEW DATASHEET ACCORDING TO PCN DSG/CT/2C14.
SPECIAL MARKING: IRF740 @
TYPE
V
DSS
R
DS(on)
I
D
IRF740
400 V
< 0.55
10 A
Symbol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
GS
= 0)
400
V
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
400
V
V
GS
Gate- source Voltage
20
V
I
D
Drain Current (continuos) at T
C
= 25C
10
A
I
D
Drain Current (continuos) at T
C
= 100C
6.3
A
I
DM
( )
Drain Current (pulsed)
40
A
P
TOT
Total Dissipation at T
C
= 25C
125
W
Derating Factor
1.0
W/C
dv/dt(1)
Peak Diode Recovery voltage slope
4.0
V/ns
T
stg
Storage Temperature
65 to 150
C
T
j
Max. Operating Junction Temperature
TO-220
1
2
3
INTERNAL SCHEMATIC DIAGRAM
IRF740
2/8
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE = 25 C UNLESS OTHERWISE SPECIFIED)
OFF
ON (1)
DYNAMIC
Rthj-case
Thermal Resistance Junction-case Max
1
C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
62.5
C/W
T
l
Maximum Lead Temperature For Soldering Purpose
300
C
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
10
A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 C, I
D
= I
AR
, V
DD
= 50 V)
520
mJ
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250 A, V
GS
= 0
400
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
1
A
V
DS
= Max Rating, T
C
= 125 C
50
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= 20V
100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250A
2
3
4
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10V, I
D
= 5.3 A
0.46
0.55
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(1)
Forward Transconductance
V
DS
> I
D(on)
x R
DS(on)max,
I
D
= 6 A
7
S
C
iss
Input Capacitance
V
DS
= 25V, f = 1 MHz, V
GS
= 0
1259
pF
C
oss
Output Capacitance
206
pF
C
rss
Reverse Transfer
Capacitance
25.6
pF
3/8
IRF740
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
Turn-on Delay Time
V
DD
= 200V, I
D
= 5 A
R
G
= 4.7
V
GS
= 10V
(see test circuit, Figure 3)
17
ns
t
r
Rise Time
10
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 320V, I
D
= 10.7 A,
V
GS
= 10V
35
11
12
43
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(off)
t
f
t
c
Off-voltage Rise Time
Fall Time
Cross-over Time
Vclamp = 320V, I
D
= 10 A
R
G
= 4.7
,
V
GS
= 10V
(see test circuit, Figure 5)
10
10
17
ns
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
Source-drain Current
10
A
I
SDM
(2)
Source-drain Current (pulsed)
40
A
V
SD
(1)
Forward On Voltage
I
SD
= 10 A, V
GS
= 0
1.6
V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 10 A, di/dt = 100A/s,
V
DD
= 100V, T
j
= 150C
(see test circuit, Figure 5)
370
3.2
17
ns
C
A
Safe Operating Area
Thermal Impedence
IRF740
4/8
Output Characteristics
Capacitance Variations
Gate Charge vs Gate-source Voltage
Transconductance
Static Drain-source On Resistance
Transfer Characteristics
5/8
IRF740
Source-drain Diode Forward Characteristics
Normalized On Resistance vs Temperature
Normalized Gate Thereshold Voltage vs Temp.
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