VNB14N04/K14N04FM
VNP14N04FI/VNV14N04
"OMNIFET":
FULLY AUTOPROTECTED POWER MOSFET
June 1998
BLOCK DIAGRAM (
)
TYPE
V
c lamp
R
DS(on)
I
lim
VNB14N04
VNK14N04FM
VNP14N04FI
VNV14N04
42 V
42 V
42 V
42 V
0.07
0.07
0.07
0.07
14 A
14 A
14 A
14 A
s
LINEAR CURRENT LIMITATION
s
THERMAL SHUT DOWN
s
SHORT CIRCUIT PROTECTION
s
INTEGRATED CLAMP
s
LOW CURRENT DRAWN FROM INPUT PIN
s
DIAGNOSTIC FEEDBACK THROUGH INPUT
PIN
s
ESD PROTECTION
s
DIRECT ACCESS TO THE GATE OF THE
POWER MOSFET (ANALOG DRIVING)
s
COMPATIBLE WITH STANDARD POWER
MOSFET
DESCRIPTION
The VNB14N04, VNK14N04FM, VNP14N04FI
and VNV14N04 are monolithic devices made
using STMicroelectronics VIPower M0
Technology, intended for replacement of
standard power MOSFETS in DC to 50 KHz
applications. Built-in thermal shut-down, linear
current limitation and overvoltage clamp protect
the chip in harsh enviroments.
Fault feedback can be detected by monitoring the
voltage at the input pin.
1
10
PowerSO-10
1
3
1
2
3
ISOWATT220
D2PAK
TO-263
SOT82-FM
(
) PowerSO-10 Pin Configuration : INPUT = 6,7,8,9,10; SOURCE = 1,2,4,5; DRAIN = TAB
1/14
ABSOLUTE MAXIMUM RATING
Symbol
Parameter
Value
Unit
PowerSO-10
D2PAK
SOT-82FM
ISOWATT220
V
DS
Drain-source Voltage (V
in
= 0)
Internally Clamped
V
V
in
Input Voltage
18
V
I
D
Drain Current
Internally Limited
A
I
R
Reverse DC Output Current
-14
A
V
esd
Electrostatic Discharge (C= 100 pF,
R=1.5 K
)
2000
V
P
tot
Total Dissipation at T
c
= 25
o
C
50
9.5
31
W
T
j
Operating Junction Temperature
Internally Limited
o
C
T
c
Case Operating Temperature
Internally Limited
o
C
T
stg
Storage Temperature
-55 to 150
o
C
THERMAL DATA
ISOWATT220
PowerSO-10
SOT82-FM
D2PAK
R
th j-case
Thermal Resistance
Junction-case Max
4
2.5
13
2.5
o
C/W
R
th j-a mb
Thermal Resistance
Junction-ambient Max
62.5
50
100
62.5
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
CLAMP
Drain-source Clamp
Voltage
I
D
= 200 mA V
in
= 0
36
42
48
V
V
CLTH
Drain-source Clamp
Threshold Voltage
I
D
= 2 mA V
in
= 0
35
V
V
INCL
Input-Source Reverse
Clamp Voltage
I
in
= -1 mA
-1
-0.3
V
I
DSS
Zero Input Voltage
Drain Current (V
in
= 0)
V
DS
= 13 V V
in
= 0
V
DS
= 25 V V
in
= 0
50
200
A
A
I
I SS
Supply Current from
Input Pin
V
DS
= 0 V V
in
= 10 V
250
500
A
ON (
)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
IN(th)
Input Threshold
Voltage
V
DS
= V
in
I
D
+ Ii
n
= 1 mA
0.8
3
V
R
DS(on)
Static Drain-source On
Resistance
V
in
= 10 V I
D
= 7 A
V
in
= 5 V I
D
= 7 A
0.07
0.1
VNB14N04-VNK14N04FM-VNP14N04FI-VNV14N04
2/14
ELECTRICAL CHARACTERISTICS (continued)
DYNAMIC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(
)
Forward
Transconductance
V
DS
= 13 V I
D
= 7 A
8
10
S
C
oss
Output Capacitance
V
DS
= 13 V f = 1 MHz V
in
= 0
400
500
pF
SWITCHING (**)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
t
d(off)
t
f
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
V
DD
= 15 V I
d
= 7 A
V
gen
= 10 V R
gen
= 10
(see figure 3)
60
160
250
100
120
300
400
200
ns
ns
ns
ns
t
d(on)
t
r
t
d(off)
t
f
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
V
DD
= 15 V I
d
= 7 A
V
gen
= 10 V R
gen
= 1000
(see figure 3)
300
1.5
5.5
1.8
500
2.2
7.5
2.5
ns
s
s
s
(di/dt)
on
Turn-on Current Slope
V
DD
= 15 V I
D
= 7 A
V
in
= 10 V R
gen
= 10
120
A/
s
Q
i
Total Input Charge
V
DD
= 12 V I
D
= 7 A V
in
= 10 V
30
nC
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
SD
(
)
Forward On Voltage
I
SD
= 7 A V
in
= 0
1.6
V
t
rr
(
)
Q
rr
(
)
I
RRM
(
)
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I
SD
= 7 A di/dt = 100 A/
s
V
DD
= 30 V T
j
= 25
o
C
(see test circuit, figure 5)
110
0.34
6.1
ns
C
A
PROTECTION
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
lim
Drain Current Limit
V
in
= 10 V V
DS
= 13 V
V
in
= 5 V V
DS
= 13 V
10
10
14
14
20
20
A
A
t
dlim
(
)
Step Response
Current Limit
V
in
= 10 V
V
in
= 5 V
30
80
60
150
s
s
T
jsh
(
)
Overtemperature
Shutdown
150
o
C
T
jrs
(
)
Overtemperature Reset
135
o
C
I
gf
(
)
Fault Sink Current
V
in
= 10 V V
DS
= 13 V
V
in
= 5 V V
DS
= 13 V
50
20
mA
mA
E
as
(
)
Single Pulse
Avalanche Energy
starting T
j
= 25
o
C V
DD
= 20 V
V
in
= 10 V R
ge n
= 1 K
L = 10 mH
0.65
J
(
) Pulsed: Pulse duration = 300
s, duty cycle 1.5 %
(
) Parameters guaranteed by design/characterization
VNB14N04-VNK14N04FM-VNP14N04FI-VNV14N04
3/14
During normal operation, the Input pin is
electrically connected to the gate of the internal
power MOSFET. The device then behaves like a
standard power MOSFET and can be used as a
switch from DC to 50 KHz. The only difference
from the user's standpoint is that a small DC
current (I
iss
) flows into the Input pin in order to
supply the internal circuitry.
The device integrates:
-
OVERVOLTAGE CLAMP PROTECTION:
internally set at 42V, along with the rugged
avalanche characteristics of the Power
MOSFET stage give this device unrivalled
ruggedness and energy handling capability.
This feature is mainly important when driving
inductive loads.
-
LINEAR CURRENT LIMITER CIRCUIT: limits
the drain current Id to Ilim whatever the Input
pin voltage. When the current limiter is active,
the device operates in the linear region, so
power dissipation may exceed the capability of
the heatsink. Both case and junction
temperatures increase, and if this phase lasts
long enough, junction temperature may reach
the overtemperature threshold T
jsh
.
-
OVERTEMPERATURE AND SHORT CIRCUIT
PROTECTION: these are based on sensing
the chip temperature and are not dependent on
the input voltage. The location of the sensing
element on the chip in the power stage area
ensures fast, accurate detection of the junction
temperature. Overtemperature cutout occurs at
minimum 150
o
C. The device is automatically
restarted when the chip temperature falls
below 135
o
C.
-
STATUS FEEDBACK: In the case of an
overtemperature fault condition, a Status
Feedback is provided through the Input pin.
The internal protection circuit disconnects the
input from the gate and connects it instead to
ground via an equivalent resistance of 100
.
The failure can be detected by monitoring the
voltage at the Input pin, which will be close to
ground potential.
Additional features of this device are ESD
protection according to the Human Body model
and the ability to be driven from a TTL Logic
circuit (with a small increase in R
DS(on)
).
PROTECTION FEATURES
VNB14N04-VNK14N04FM-VNP14N04FI-VNV14N04
4/14
Thermal Impedance For ISOWATT220
Derating Curve
Transconductance
Thermal Impedance For D2PAK / PowerSO-10
Output Characteristics
Static Drain-Source On Resistance vs Input
Voltage
VNB14N04-VNK14N04FM-VNP14N04FI-VNV14N04
5/14
PDF 
ZIP