VND5N07/VND5N07-1
VNP5N07FI/K5N07FM
"OMNIFET":
FULLY AUTOPROTECTED POWER MOSFET
June 1996
BLOCK DIAGRAM
TYPE
V
c lamp
R
DS(on)
I
lim
VND5N07
VND5N07-1
VNP5N07FI
VNK5N07FM
70 V
70 V
70 V
70 V
0.2
0.2
0.2
0.2
5 A
5 A
5 A
5 A
s
LINEAR CURRENT LIMITATION
s
THERMAL SHUT DOWN
s
SHORT CIRCUIT PROTECTION
s
INTEGRATED CLAMP
s
LOW CURRENT DRAWN FROM INPUT PIN
s
DIAGNOSTIC FEEDBACK THROUGH INPUT
PIN
s
ESD PROTECTION
s
DIRECT ACCESS TO THE GATE OF THE
POWER MOSFET (ANALOG DRIVING)
s
COMPATIBLE WITH STANDARD POWER
MOSFET
DESCRIPTION
The VND5N07, VND5N07-1, VNP5N07FI and
VNK5N07FM are monolithic devices made using
SGS-THOMSON Vertical Intelligent Power M0
Technology, intended for replacement of
standard power MOSFETS in DC to 50 KHz
applications. Built-in thermal shut-down, linear
current limitation and overvoltage clamp protect
the chip in harsh enviroments.
Fault feedback can be detected by monitoring the
voltage at the input pin.
SOT82-FM
1
3
1
2
3
ISOWATT220
DPAK
TO-252
3
2
1
IPAK
TO-251
1/14
ABSOLUTE MAXIMUM RATING
Symbol
Parameter
Value
Unit
DPAK
IPAK
ISOWATT220
SOT-82FM
V
DS
Drain-source Voltage (V
in
= 0)
Internally Clamped
V
V
in
Input Voltage
18
V
I
D
Drain Current
Internally Limited
A
I
R
Reverse DC Output Current
-7
A
V
esd
Electrostatic Discharge (C= 100 pF,
R=1.5 K
)
2000
V
P
tot
Total Dissipation at T
c
= 25
o
C
60
24
9
W
T
j
Operating Junction Temperature
Internally Limited
o
C
T
c
Case Operating Temperature
Internally Limited
o
C
T
stg
Storage Temperature
-55 to 150
o
C
THERMAL DATA
DPAK/IPAK
ISOWATT220
SOT82-FM
R
th j-case
Thermal Resistance Junction-case
Max
3.75
5.2
14
o
C/W
R
th j-a mb
Thermal Resistance Junction-ambient
Max
100
62.5
100
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
CLAMP
Drain-source Clamp
Voltage
I
D
= 200 mA V
in
= 0
60
70
80
V
V
CLTH
Drain-source Clamp
Threshold Voltage
I
D
= 2 mA V
in
= 0
55
V
V
INCL
Input-Source Reverse
Clamp Voltage
I
in
= -1 mA
-1
-0.3
V
I
DSS
Zero Input Voltage
Drain Current (V
in
= 0)
V
DS
= 13 V V
in
= 0
V
DS
= 25 V V
in
= 0
50
200
A
A
I
I SS
Supply Current from
Input Pin
V
DS
= 0 V V
in
= 10 V
250
500
A
ON (
)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
IN(th)
Input Threshold
Voltage
V
DS
= V
in
I
D
+ Ii
n
= 1 mA
0.8
3
V
R
DS(on)
Static Drain-source On
Resistance
V
in
= 10 V I
D
= 2.5 A
V
in
= 5 V I
D
= 2.5 A
0.200
0.280
VND5N07/VND5N07-1/VNP5N07FI/VNK5N07FM
2/14
ELECTRICAL CHARACTERISTICS (continued)
DYNAMIC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(
)
Forward
Transconductance
V
DS
= 13 V I
D
= 2.5 A
3
4
S
C
oss
Output Capacitance
VDS = 13 V f = 1 MHz V
in
= 0
200
300
pF
SWITCHING (
)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
t
d(off)
t
f
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
V
DD
= 15 V I
d
= 2.5 A
V
gen
= 10 V R
gen
= 10
(see figure 3)
50
60
150
40
100
100
300
80
ns
ns
ns
ns
t
d(on)
t
r
t
d(off)
t
f
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
V
DD
= 15 V I
d
= 2.5 A
V
gen
= 10 V R
gen
= 1000
(see figure 3)
150
400
3900
1100
250
600
5000
1600
ns
ns
ns
ns
(di/dt)
on
Turn-on Current Slope
V
DD
= 15 V I
D
= 2.5 A
V
in
= 10 V R
gen
= 10
80
A/
s
Q
i
Total Input Charge
V
DD
= 12 V I
D
= 2.5 A V
in
= 10 V
18
nC
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
SD
(
)
Forward On Voltage
I
SD
= 2.5 A V
in
= 0
1.6
V
t
rr
(
)
Q
rr
(
)
I
RRM
(
)
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I
SD
= 2.5 A di/dt = 100 A/
s
V
DD
= 30 V T
j
= 25
o
C
(see test circuit, figure 5)
150
0.3
5.7
ns
C
A
PROTECTION
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
lim
Drain Current Limit
V
in
= 10 V V
DS
= 13 V
V
in
= 5 V V
DS
= 13 V
3.5
3.5
5
5
7
7
A
A
t
dlim
(
)
Step Response
Current Limit
V
in
= 10 V
V
in
= 5 V
15
40
20
60
s
s
T
jsh
(
)
Overtemperature
Shutdown
150
o
C
T
jrs
(
)
Overtemperature Reset
135
o
C
I
gf
(
)
Fault Sink Current
V
in
= 10 V V
DS
= 13 V
V
in
= 5 V V
DS
= 13 V
50
20
mA
mA
E
as
(
)
Single Pulse
Avalanche Energy
starting T
j
= 25
o
C V
DD
= 20 V
V
in
= 10 V R
ge n
= 1 K
L = 10 mH
0.2
J
(
) Pulsed: Pulse duration = 300
s, duty cycle 1.5 %
(
) Parameters guaranteed by design/characterization
VND5N07/VND5N07-1/VNP5N07FI/VNK5N07FM
3/14
During normal operation, the Input pin is
electrically connected to the gate of the internal
power MOSFET. The device then behaves like a
standard power MOSFET and can be used as a
switch from DC to 50 KHz. The only difference
from the user's standpoint is that a small DC
current (I
iss
) flows into the Input pin in order to
supply the internal circuitry.
The device integrates:
-
OVERVOLTAGE CLAMP PROTECTION:
internally set at 70V, along with the rugged
avalanche characteristics of the Power
MOSFET stage give this device unrivalled
ruggedness and energy handling capability.
This feature is mainly important when driving
inductive loads.
-
LINEAR CURRENT LIMITER CIRCUIT: limits
the drain current Id to Ilim whatever the Input
pin voltage. When the current limiter is active,
the device operates in the linear region, so
power dissipation may exceed the capability of
the heatsink. Both case and junction
temperatures increase, and if this phase lasts
long enough, junction temperature may reach
the overtemperature threshold T
jsh
.
-
OVERTEMPERATURE AND SHORT CIRCUIT
PROTECTION: these are based on sensing
the chip temperature and are not dependent on
the input voltage. The location of the sensing
element on the chip in the power stage area
ensures fast, accurate detection of the junction
temperature. Overtemperature cutout occurs at
minimum 150
o
C. The device is automatically
restarted when the chip temperature falls
below 135
o
C.
-
STATUS FEEDBACK: In the case of an
overtemperature fault condition, a Status
Feedback is provided through the Input pin.
The internal protection circuit disconnects the
input from the gate and connects it instead to
ground via an equivalent resistance of 100
.
The failure can be detected by monitoring the
voltage at the Input pin, which will be close to
ground potential.
Additional features of this device are ESD
protection according to the Human Body model
and the ability to be driven from a TTL Logic
circuit (with a small increase in R
DS(on)
).
PROTECTION FEATURES
VND5N07/VND5N07-1/VNP5N07FI/VNK5N07FM
4/14
Thermal Impedance For DPAK / IPAK
Derating Curve
Transconductance
Thermal Impedance For ISOWATT220
Output Characteristics
Static Drain-Source On Resistance vs Input
Voltage
VND5N07/VND5N07-1/VNP5N07FI/VNK5N07FM
5/14
Static Drain-Source On Resistance
Input Charge vs Input Voltage
Normalized Input Threshold Voltage vs
Temperature
Static Drain-Source On Resistance
Capacitance Variations
Normalized On Resistance vs Temperature
VND5N07/VND5N07-1/VNP5N07FI/VNK5N07FM
6/14
Normalized On Resistance vs Temperature
Turn-on Current Slope
Turn-off Drain-Source Voltage Slope
Turn-on Current Slope
Turn-off Drain-Source Voltage Slope
Switching Time Resistive Load
VND5N07/VND5N07-1/VNP5N07FI/VNK5N07FM
7/14
Switching Time Resistive Load
Current Limit vs Junction Temperature
Source Drain Diode Forward Characteristics
Switching Time Resistive Load
Step Response Current Limit
VND5N07/VND5N07-1/VNP5N07FI/VNK5N07FM
8/14
Fig. 2: Unclamped Inductive Waveforms
Fig. 3: Switching Times Test Circuits For
Resistive Load
Fig. 4: Input Charge Test Circuit
Fig. 1: Unclamped Inductive Load Test Circuits
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
Fig. 6: Waveforms
VND5N07/VND5N07-1/VNP5N07FI/VNK5N07FM
9/14
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
2.2
2.4
0.086
0.094
A1
0.9
1.1
0.035
0.043
A2
0.03
0.23 0.001
0.009
B
0.64
0.9
0.025
0.035
B2
5.2
5.4
0.204
0.212
C
0.45
0.6
0.017
0.023
C2
0.48
0.6
0.019
0.023
D
6
6.2
0.236
0.244
E
6.4
6.6
0.252
0.260
G
4.4
4.6
0.173
0.181
H
9.35
10.1
0.368
0.397
L2
0.8
0.031
L4
0.6
1
0.023
0.039
==
D
L2
L4
1 3
==
B
E
==
B2
G
2
A
C2
C
H
A1
DETAIL "A"
A2
DETAIL "A"
TO-252 (DPAK) MECHANICAL DATA
0068772-B
VND5N07/VND5N07-1/VNP5N07FI/VNK5N07FM
10/14
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
2.2
2.4
0.086
0.094
A1
0.9
1.1
0.035
0.043
A3
0.7
1.3 0.027
0.051
B
0.64
0.9
0.025
0.031
B2
5.2
5.4
0.204
0.212
B3
0.85
0.033
B5
0.3
0.012
B6
0.95
0.037
C
0.45
0.6
0.017
0.023
C2
0.48
0.6
0.019
0.023
D
6
6.2
0.236
0.244
E
6.4
6.6
0.252
0.260
G
4.4
4.6
0.173
0.181
H
15.9
16.3
0.626
0.641
L
9
9.4
0.354
0.370
L1
0.8
1.2
0.031
0.047
L2
0.8
1
0.031
0.039
A
C2
C
A3
H
A1
D
L
L2
L1
1 3
= =
B3
B
B6
B2
E
G
= =
= =
B5
2
TO-251 (IPAK) MECHANICAL DATA
0068771-E
VND5N07/VND5N07-1/VNP5N07FI/VNK5N07FM
11/14
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.4
4.6
0.173
0.181
B
2.5
2.7
0.098
0.106
D
2.5
2.75
0.098
0.108
E
0.4
0.7
0.015
0.027
F
0.75
1
0.030
0.039
F1
1.15
1.7
0.045
0.067
F2
1.15
1.7
0.045
0.067
G
4.95
5.2
0.195
0.204
G1
2.4
2.7
0.094
0.106
H
10
10.4
0.393
0.409
L2
16
0.630
L3
28.6
30.6
1.126
1.204
L4
9.8
10.6
0.385
0.417
L6
15.9
16.4
0.626
0.645
L7
9
9.3
0.354
0.366
3
3.2
0.118
0.126
L2
A
B
D
E
H
G
L6
F
L3
G1
1 2 3
F2
F1
L7
L4
ISOWATT220 MECHANICAL DATA
P011G
VND5N07/VND5N07-1/VNP5N07FI/VNK5N07FM
12/14
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
2.85
3.05
1.122
1.200
A1
1.47
1.67
0.578
0.657
b
0.40
0.60
0.157
0.236
b1
1.4
1.6
0.551
0.630
b2
1.3
1.5
0.511
0.590
c
0.45
0.6
0.177
0.236
D
10.5
10.9
4.133
4.291
e
2.2
2.8
0.866
1.102
E
7.45
7.75
2.933
3.051
L
15.5
15.9
6.102
6.260
L1
1.95
2.35
0.767
0.925
P032R
SOT82-FM MECHANICAL DATA
VND5N07/VND5N07-1/VNP5N07FI/VNK5N07FM
13/14
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1996 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
.
VND5N07/VND5N07-1/VNP5N07FI/VNK5N07FM
14/14
PDF 
ZIP