1/8
L3100B
L3100B1
DIL 8
OVERVOLTAGE AND OVERCURRENT
PROTECTION FOR TELECOM LINE
n
UNIDIRECTIONAL FUNCTION
n
PROGRAMMABLE BREAKDOWN VOLTAGE
UP TO 265 V
n
PROGRAMMABLE CURRENT LIMITATION
FROM 50 mA TO 550 mA
n
HIGH SURGE CURRENT CAPABILITY
I
PP
= 100A
10/1000
s
FEATURES
Dedicated
to
sensitive
telecom
equipment
protection, this device can provide both voltage
protection and current limitation with a very tight
tolerance.
Its high surge current capability makes the L3100B
a reliable protection device for very exposed
equipment, or when series resistors are very low.
The breakdown voltage can be easily programmed
by using an external zener diode.
A multiple protection mode can also be performed
when using several zener diodes, providing each
line interface with an optimized protection level.
The current limiting function is achieved with the
use of a resistor between the gate N and the
cathode. The value of the resistor will determine
the level of the desired current.
DESCRIPTION
CCITT K17 - K20
10/700
s
1.5
kV
5/310
s
38
A
VDE 0433
10/700
s
2
kV
5/200
s
50
A
CNET
0.5/700
s
1.5
kV
0.2/310
s
38
A
COMPLIES WITH THE FOLLOWING STANDARDS :
Gate N
Gate P
Cathode
Anode
SCHEMATIC DIAGRAM
1
2
3
4
5
6
7
8
Gate N
NC
Gate P
Cathode
Anode
Anode
Anode
Anode
CONNECTION DIAGRAM
TM: ASD is trademarks of STMicroelectronics.
October 2003 - Ed: 4A
Application Specific Discretes
A.S.D.TM
L3100B/L3100B1
2/8
Symbol
Parameter
Value
Unit
I
PP
Peak pulse current (see note 1)
10/1000
s
8/20
s
100
250
A
I
TSM
Non repetitive surge peak on-state cur-
rent
tp = 10 ms
50
A
T
stg
T
j
Storage temperature range
Maximum operating junction temperature
- 40 to + 150
+ 150
C
C
T
L
Maximum lead temperature for soldering during 10s
230
C
ABSOLUTE MAXIMUM RATINGS ( T
amb
= 25 C)
Symbol
Parameter
Value
Unit
R
th (j-a)
Junction-to-ambient
80
C/W
THERMAL RESISTANCE
Note 1 : Pulse waveform 10/1000
s
100
50
% I
PP
t
t
r
p
0
t
L3100B/L3100B1
3/8
Type
V
GN
@ I
GN
= 200
mA
I
GN
@ V
AC
= 100V
V
RGN
@ I
G
= 1mA
I
GP
@ V
AC
= 100V
min.
max.
min.
max.
min.
max.
V
V
mA
mA
V
mA
L3100B/B1
0.6
1.8
30
200
0.7
150
OPERATION WITH GATES
I
pp
I
BO
I
H
I
RM
V
RM
V
BR
V
BO
I
V
Symbol
Parameter
V
RM
Stand-off voltage
I
RM
Reverse leakage current
V
BR
Breakdown voltage
V
BO
Breakover voltage
I
H
Holding current
I
BO
Breakover current
I
PP
Peak pulse current
V
GN
Gate voltage
I
GN
, I
GP
Triggering gate current
V
RGN
Reverse gate voltage
C
Capacitance
ELECTRICAL CHARACTERISTICS (T
amb
= 25 C)
Type
I
RM
@ V
RM
V
BR
@ I
R
V
BO
@
I
BO
I
H
C
max.
min.
max.
min.
max.
min.
max.
note 1
note 1
note 2
A
V
V
mA
V
mA
mA
mA
pF
L3100B
6
40
60
250
265
1
350
200
500
280
100
L3100B1
6
40
60
250
255
1
350
200
500
210
100
OPERATION WITHOUT GATE
L3100B/L3100B1
4/8
REFERENCE TEST CIRCUIT FOR I
BO
and V
BO
parameters :
220V
static
relay.
R1
R2
240
140
D.U.T
V BO
measure
IBO
measure
tp = 20ms
K
Transformer
220V/800V
5A
Auto
Transformer
220V/2A
Vout
FUNCTIONAL HOLDING CURRENT (I
H
) TEST CIRCUIT = GO - NOGO TEST.
R
- V
P
V
BAT
= - 48 V
Surge generator
D.U.T.
This is a GO-NOGO Test which allows to confirm the holding current (I
H
) level in a functional test
circuit.
This test can be performed if the reference test circuit can't be implemented.
TEST PROCEDURE :
n
1) Adjust the current level at the I
H
value by short circuiting the AK of the D.U.T.
2) Fire the D.U.T with a surge Current : Ipp = 10A , 10/1000
s.
3) The D.U.T will come back to the OFF-State within a duration of 50 ms max.
TEST PROCEDURE :
n
Pulse Test duration (tp = 20ms):
- For Bidirectional devices = Switch K is closed
- For Unidirectional devices = Switch K is open.
n
V
OUT
Selection
- Device with V
BO
<
200 Volt
- V
OUT
= 250 V
RMS
, R
1
= 140
.
- Device with V
BO
200 Volt
- V
OUT
= 480 V
RMS
, R
2
= 240
.
L3100B/L3100B1
5/8
1E-2
1E-1
1E+0
1E+1
1E+2
1E+3
0
10
20
30
40
50
60
I
(A)
TSM
F=50Hz
Tj initial=25C
t(s)
Figure 1 : Surge peak current versus overload
duration.
0
10
20
30
40
50
60
70
0.98
0.99
1.00
1.01
1.02
1.03
1.04
Figure 3 : Relative variation of breakdown voltage
versus ambient temperature.
1
10
100
0
20
40
60
80
100
Figure 4 : Junction capacitance versus reverse
applied voltage.
0
10
20
30
40
50
60
70
0.7
0.8
0.9
1.0
1.1
1.2
Figure 2 : Relative variation of holding current
versus junction temperature.
L3100B/L3100B1
6/8
Table below gives the tolerance of the limited current I
T
for each standardized resistor value.
The formula (1) has been used with V
GN
values specified at the typical gate current level I
GN
.
+
-
A
C
L3100B\B1
PTC
HOOK
SPEECH
DIALING
RINGER
GN
Ra
RINGER
APPLICATION CIRCUIT
Overvoltage Protection and Current limitation
CURRENT TOLERANCE
R
( 5%)
I
T
mA
min
I
T
mA
max
3.00
3.30
3.60
3.90
4.30
4.70
5.10
5.60
6.20
6.80
7.50
8.20
9.10
10.10
11.00
12.00
13.00
15.00
16.00
18.00
20.00
22.00
24.00
27.00
30.00
268
246
228
213
196
181
170
158
145
135
152
117
108
101
95
90
85
78
75
70
66
62
60
56
54
533
503
478
456
433
413
396
379
361
347
333
322
310
299
291
283
277
266
263
256
250
245
242
237
233
L3100B
-
+
LOAD
V
GN
@
I
GN
Min.
Max.
Typ.
V
V
mA
0.75
0.95
100
L3100B/L3100B1
7/8
ORDER CODE
PROTECTION MODES :
ON HOOK = Ringer circuit protection is ensured with breakdown voltage at 265 V.
OFF HOOK = In dialing mode and in speech mode, the breakdown voltage of L3100B can be adapted to
different levels with zener diodes.
Ground key telephone set Protection
L3100 B 1
VERSION.
= VBR = 265 V
1 = VBR = 255 V
MARKING :
Logo, Date Code,part Number.
L3100B/L3100B1
8/8
PACKAGE MECHANICAL DATA.
DIL 8 (Plastic)
Packaging : Product supplied in antistatic tubes.
REF.
DIMENSIONS
Millimetres
Inches
Min.
Typ. Max. Min.
Typ. Max.
a1
0.70
0.027
B
1.39
1.65 0.055
0.065
B1
0.91
1.04 0.036
0.041
b
0.5
0.020
b1
0.38
0.50 0.015
0.020
D
9.80
0.385
E
8.8
0.346
e
2.54
0.100
e3
7.62
0.300
F
7.1
0.280
I
4.8
0.189
L
3.3
0.130
Z
0.44
1.60 0.017
0.063
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not au-
thorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics.
All other names are the property of their respective owners.
2003 STMicroelectronics - All rights reserved.
STMicroelectronics GROUP OF COMPANIES
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Weight:0.59 g
8
1
5
4
E
D
F
b1
b
e3
e
Z
B
B1
I
L
a1
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