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LCP1521S/LCP152DEE
PRELIMINAY DATASHEET
January 2003 - Ed: 1A
PROGRAMMABLE TRANSIENT VOLTAGE
SUPPRESSOR FOR SLIC PROTECTION
SO-8
LCP1521S
s
Dual programmable transient suppressor
s
Wide negative firing voltage range:
V
MGL
= -150 V max.
s
Low dynamic switching voltages: V
FP
and V
DGL
s
Low gate triggering current: I
GT
= 5 mA max
s
Peak pulse current: I
PP
= 30 A (10/1000
s)
s
Holding current: I
H
= 150 mA min
s
Low space consuming package
FEATURES
These devices have been especially designed to
protect new high voltage, as well as classical
SLICs, against transient overvoltages.
Positive overvoltages are clamped by 2 diodes.
Negative surges are suppressed by 2 thyristors,
their breakdown voltage being referenced to -V
BAT
through the gate.
These components present a very low gate
triggering current (I
GT
) in order to reduce the cur-
rent consumption on printed circuit board during
the firing phase.
A particular attention has been given to the internal
wire bonding. The Kelvin method configuration en-
sures reliable protection, reducing the overvoltage
introduced by the parasitic inductances of the wiring,
especially for very fast transients.
DESCRIPTION
A.S.D.TM
TIP
GATE
NC
RING
TIP
GND
RING
GND
1
FUNCTIONAL DIAGRAM (LCP1521S)
Trisils are not subject to ageing and provide a fail
safe mode in short circuit for a better protection.
Trisils are used to help equipment to meet various
standards such as UL1950, IEC950 / CSA C22.2,
UL1459 and FCC part68. Trisils have UL94 V0
resin approved (Trisils are UL497B approved (file:
E136224)).
BENEFITS
QFN 3x3
LCP152DEE
TIP
TIP
GATE
GND
NC
RING
RING
FUNCTIONAL DIAGRAM (LCP152DEE)
TM: ASD is a trademark of STMicroelectronics
LCP1521S/LCP152DEE
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STANDARD
Peak Surge
Voltage
(V)
Voltage
Waveform
Required
peak current
(A)
Current
Waveform
Minimum serial
resistor to meet
standard (
)
GR-1089 Core
First level
2500
1000
2/10s
10/1000s
500
100
2/10s
10/1000s
10
24
GR-1089 Core
Second level
5000
2/10s
500
2/10s
20
GR-1089 Core
Intra-building
1500
2/10s
100
2/10s
0
ITU-T-K20/K21
6000
1500
10/700s
150
37.5
5/310s
110
0
ITU-T-K20
(IEC61000-4-2)
8000
15000
1/60 ns
ESD contact discharge
ESD air discharge
0
0
VDE0433
4000
2000
10/700s
100
50
5/310s
60
10
VDE0878
4000
2000
1.2/50s
100
50
1/20s
0
0
IEC61000-4-5
4000
4000
10/700s
1.2/50s
100
100
5/310s
8/20s
60
0
FCC Part 68, lightning
surge type A
1500
800
10/160s
10/560s
200
100
10/160s
10/560s
22.5
15
FCC Part 68, lightning
surge type B
1000
9/720s
25
5/320s
0
IN COMPLIANCES WITH THE FOLLOWING STANDARDS
Symbol
Parameter
Value
Unit
Rth (j-a)
Junction to ambient
SO-8
130
C/W
QFN 3x3
170
THERMAL RESISTANCE
V
RM
V
R
I
PP
I
H
I
R
I
RM
V
F
I
V
Symbol
Parameter
I
GT
Gate triggering current
I
H
Holding current
I
RM
Reverse leakage current LINE / GND
I
RG
Reverse leakage current GATE / LINE
V
RM
Reverse voltage LINE / GND
V
GT
Gate triggering voltage
V
F
Forward drop voltage LINE / GND
V
FP
Peak forward voltage LINE / GND
V
DGL
Dynamic switching voltage GATE / LINE
V
GATE
GATE / GND voltage
V
RG
Reverse voltage GATE / LINE
C
Capacitance LINE / GND
ELECTRICAL CHARACTERISTICS (T
amb
= 25C)
LCP1521S/LCP152DEE
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Symbol
Parameter
Value
Unit
I
PP
Peak pulse current (see note1)
10/1000
s
8/20s
10/560s
5/310
s
10/160s
1/20s
2/10
s
30
100
35
40
50
100
170
A
I
TSM
Non repetitive surge peak on-state
current
(50Hz sinusoidal)
t = 10ms
t = 1s
10
3
A
I
GSM
Maximum gate current
(50Hz sinusoidal)
t = 10ms
2
A
V
MLG
V
MGL
Maximum voltage LINE/GND
Maximum voltage GATE/LINE
-40C < Tamb < +85C
-40C < Tamb < +85C
-150
-150
V
T
stg
Tj
Storage temperature range
Maximum junction temperature
- 55 to + 150
150
C
T
L
Maximum lead temperature for soldering during 10s
260
C
ABSOLUTE RATINGS (T
amb
= 25C, unless otherwise specified).
100
50
% IPP
t
t
t
r
p
0
tr: rise time (s)
tp: pulse duration (s)
ex: Pulse waveform 10/1000s
tr = 10s
tp = 1000s
Repetitive peak pulse current
Symbol
Test conditions
Max
Unit
V
F
I
F
= 5A
t = 500s
2
V
V
FP
(note 1)
10/700
s
1.2/50
s
2/10
s
1.5kV
1.5kV
2.5kV
R
S
= 10
R
S
= 10
R
S
= 62
5
9
30
V
Note 1: see test circuit for VFP; RS is the protection resistor located on the line card.
1- PARAMETERS RELATED TO THE DIODE LINE / GND (T
amb
= 25C)
LCP1521S/LCP152DEE
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Symbol
Test conditions
Typ.
Max.
Unit
I
RM
V
GATE / LINE
= -1V
V
RM
= -150V
V
GATE / LINE
= -1V
V
RM
= -150V
Tc=25C
Tc=85C
5
50
A
C
V
R
= 50V bias, V
RMS
= 1V, F = 1MHz
V
R
= 2V bias, V
RMS
= 1V, F = 1MHz
15
35
pF
3 - PARAMETERS RELATED TO DIODE AND PROTECTION THYRISTOR (T
amb
= 25C, unless other-
wise specified)
Symbol
Test conditions
Min
Max
Unit
I
GT
V
GND / LINE
= -48V
0.1
5
mA
I
H
V
GATE
= -48V (note 2)
150
mA
V
GT
at I
GT
2.5
V
I
RG
V
RG
= -150V
V
RG
= -150V
Tc=25C
Tc=85C
5
50
A
V
DGL
V
GATE
= -48V
(note 3)
10/700s
1.2/50s
2/10s
1.5kV
1.5kV
2.5kV
R
S
= 10
R
S
= 10
R
S
= 62
I
PP
= 30A
I
PP
= 30A
I
PP
= 38A
7
10
25
V
Note 2: see functional holding current (IH) test circuit
Note 3: see test circuit for VDGL
The oscillations with a time duration lower than 50ns are not taken into account
2 - PARAMETERS RELATED TO THE PROTECTION THYRISTOR (T
amb
= 25C unless otherwise specified)
LCP1521S/LCP152DEE
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Pulse (s)
V
p
C
1
C
2
L
R
1
R
2
R
3
R
4
I
PP
R
s
t
r
t
p
(V)
(
F)
(nF)
(
H)
(
)
(
)
(
)
(
)
(A)
(
)
10
700
1500
20
200
0
50
15
25
25
30
10
1.2
50
1500
1
33
0
76
13
25
25
30
10
2
10
2500
10
0
1.1
1.3
0
3
3
38
62
This is a GO-NO GO test which allows to confirm the holding current (I
H
) level in a functional test circuit.
TEST PROCEDURE :
- Adjust the current level at the I
H
value by short circuiting the D.U.T.
- Fire the D.U.T. with a surge current : I
PP
= 10A, 10/1000
s.
- The D.U.T. will come back to the off-state within a duration of 50ms max.
R
V
BAT
= - 100V
Surge generator
D.U.T
FUNCTIONAL HOLDING CURRENT (I
H
) TEST CIRCUIT : GO-NO GO TEST
C
C
R
R
TIP
R ING
G ND
V
P
4
3
2
R
2
R
1
(V is defined in unload condition)
P
L
1
TEST CIRCUIT FOR V
FP
AND V
DGL
PARAMETERS
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