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TARGET DATA
January, 24 2003
LET19060C
RF POWER TRANSISTORS
Ldmos Enhanced Technology
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
IS-97 CDMA PERFORMANCES
P
OUT
=
7.5 W
EFF. = 18 %
EDGE PERFORMANCES
P
OUT
=
30 W
EFF. = 25 %
GSM PERFORMANCES
P
OUT
=
65 W
EFF. = 45 %
EXCELLENT THERMAL STABILITY
BeO FREE PACKAGE
INTERNAL INPUT/OUTPUT MATCHING
ESD PROTECTION
DESCRIPTION
The LET19060C is a common source N-Channel
enhancement-mode lateral Field-Effect RF power
transistor designed for broadband commercial and
industrial applications at frequencies up to 1.0
GHz. The LET19060C is designed for high gain
and broadband performance operating in common
source mode at 26 V. Its internal matching makes
it ideal for base station applications requiring high
linearity.
PIN CONNECTION
1. Drain
2. Source
3. Gate
1
2
3
M265
epoxy sealed
ORDER CODE
LET19060C
BRANDING
LET19060C
ABSOLUTE MAXIMUM RATINGS (T
CASE
= 25
C)
Symbol
Parameter
Value
Unit
V
(BR)DSS
Drain-Source Voltage
65
V
V
GS
Gate-Source Voltage
-0.5 to +15
V
I
D
Drain Current
7
A
P
DISS
Power Dissipation (@ Tc = 70 C)
130
W
Tj
Max. Operating Junction Temperature
200
C
T
STG
Storage Temperature
-65 to +150
C
THERMAL DATA
R
th(j-c)
Junction -Case Thermal Resistance
1.0
C/W
LET19060C
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ELECTRICAL SPECIFICATION (T
CASE
= 25
C)
STATIC (Per Section)
ESD PROTECTION CHARACTERISTICS
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
V
GS
= 0 V I
D
= 10
A
65
V
I
DSS
V
GS
= 0 V V
DS
= 26 V
6
A
I
GSS
V
GS
= 5 V V
DS
= 0 V
1
A
V
GS(Q)
V
DS
= 26 V
I
D
= TBD
2.5
4.5
V
V
DS(ON)
V
GS
= 10 V
I
D
= 2 A
0.27
V
G
FS
V
DS
= 10 V
I
D
= 2 A
4.7
mho
C
ISS
*
V
GS
= 0 V
V
DS
= 26 V
f = 1 MHz
TBD
pF
C
OSS
*
V
GS
= 0 V
V
DS
= 26 V
f = 1 MHz
TBD
pF
C
RSS
V
GS
= 0 V
V
DS
= 26 V
f = 1 MHz
TBD
pF
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
DYNAMIC (
f = 2000 MHz
)
P
1dB
V
DD
= 26 V I
DQ
= TBD
70
75
W
D
(1)
V
DD
= 26 V I
DQ
= TBD
45
50
%
Load
mismatch
V
DD
= 26 V I
DQ
= TBD P
OUT
= 60 W
ALL PHASE ANGLES
10:1
VSWR
DYNAMIC (
f = 1930 - 1990 MHz
)
P
1dB
V
DD
= 26 V I
DQ
= TBD
60
65
W
G
P
V
DD
= 26 V I
DQ
= TBD P
OUT
= 60 W
11
13
dB
D
(1)
V
DD
= 26 V I
DQ
= TBD
40
45
%
P
OUT(CDMA)
(2)
885 KHz < -47 dBc
1.25 MHz < -55 dBc
2.25 MHz < -55 dBc
7.5
W
D(CDMA)
(2)
885 KHz < -47 dBc
1.25 MHz < -55 dBc
2.25 MHz < -55 dBc
18
%
DYNAMIC (
f = 1805 - 1880 MHz
)
P
1dB
V
DD
= 26 V I
DQ
= TBD
60
65
W
G
P
V
DD
= 26 V I
DQ
= TBD P
OUT
= 60 W
11
13
dB
D
(1)
V
DD
= 26 V I
DQ
= TBD
45
%
P
OUT(EDGE)
400 KHz < -60 dBc
600 KHz < -70 dBc
EVM < 3 %
30
W
D(EDGE)
400 KHz < -60 dBc
600 KHz < -70 dBc
EVM < 3 %
25
%
Test Conditions
Class
Human Body Model
2
Machine Model
M3
* Includes Internal Matching
(2) IS-97 CDMA Pilot, Sync, Paging, Traffic, Codes 8 Thru 13
(1) 1 dB Compression point
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LET19060C
Ref. 1023153
M265 (.370 x .780 WIDE 2/L N/HERM W/FLG) MECHANICAL DATA
mm
Inch
MIN.
TYP.
MAX
MIN.
TYP.
MAX
A
12.57
12.83
.495
.505
B
4.32
5.33
.170
.210
C
9.65
9.91
.380
.390
D
19.61
20.02
.772
.788
E
33.91
34.16
1.335
1.345
F
0.08
0.15
.003
.006
G
0.89
1.14
.035
.045
H
1.45
1.70
.057
.067
I
3.18
4.32
.125
.170
J
9.27
9.53
.365
.375
K
27.69
28.19
1.090
1.110
L
3.00
3.51
.118
.138
DIM.
LET19060C
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by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
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