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Электронный компонент: LET21004

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TARGET DATA
April, 15 2003
LET21004
RF POWER TRANSISTORS
Ldmos Enhanced Technology in Plastic Package
Designed for GSM / EDGE / IS-97 / WCDMA
applications
EXCELLENT THERMAL STABILITY
COMMON SOURCE CONFIGURATION
P
OUT
= 4 W with 11 dB gain @ 2170 MHz / 26 V
NEW LEADLESS PLASTIC PACKAGE
ESD PROTECTION
DESCRIPTION
The LET21004 is a common source N-Channel,
enhancement-mode lateral Field-Effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It operates
at 26 V in common source mode at frequencies up
to 2.1 GHz. LET21004 boasts the excellent gain,
linearity and reliability of ST's latest LDMOS
technology mounted in the innovative leadless
SMD plastic package, PowerFLATTM.
LET21004's superior linearity performance makes
it an ideal solution for base
station
applications.
ABSOLUTE MAXIMUM RATINGS (T
CASE
= 25
C)
Symbol
Parameter
Value
Unit
V
(BR)DSS
Drain-Source Voltage
65
V
V
GS
Gate-Source Voltage
-0.5 to +15
V
I
D
Drain Current
1
A
P
DISS
Power Dissipation (@ Tc = 70 C)
TBD
W
Tj
Max. Operating Junction Temperature
150
C
T
STG
Storage Temperature
-65 to +150
C
THERMAL DATA (T
CASE
= 70
C)
R
th(j-c)
Junction -Case Thermal Resistance
TBD
C/W
ORDER CODE
LET21004
BRANDING
21004
PowerFLAT
TM
(5x5)
PIN CONNECTION
TOP VIEW
LET21004
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ELECTRICAL SPECIFICATION (T
CASE
= 25
C)
STATIC
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
V
GS
= 0 V
I
DS
= 1 mA
65
V
I
DSS
V
GS
= 0 V
V
DS
= 26 V
1
A
I
GSS
V
GS
= 5 V
V
DS
= 0 V
1
A
V
GS(Q)
V
DS
= 28 V
I
D
= TBD
2.5
5.0
V
V
DS(ON)
V
GS
= 10 V
I
D
= 0.3 A
TBD
0.3
V
G
FS
V
DS
= 10 V
I
D
= 0.3 A
TBD
mho
C
ISS
V
GS
= 0 V
V
DS
= 26 V
f = 1 MHz
TBD
pF
C
OSS
V
GS
= 0 V
V
DS
= 26 V
f = 1 MHz
TBD
pF
C
RSS
V
GS
= 0 V
V
DS
= 26 V
f = 1 MHz
TBD
pF
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
DYNAMIC (
f = 2170 MHz
)
P
out
(1)
V
DD
= 26 V I
DQ
= TBD
4
5
W
D
(1)
V
DD
= 26 V I
DQ
= TBD
45
50
%
Load
mismatch
V
DD
= 26 V I
DQ
= TBD
P
OUT
= 4 W
ALL PHASE ANGLES
10:1
VSWR
DYNAMIC (
f = 2110 - 2170 MHz
)
P
out
(1)
V
DD
= 26 V I
DQ
= TBD
3
4
W
D
(1)
V
DD
= 26 V I
DQ
= TBD
40
45
%
G
P
V
DD
= 26 V I
DQ
= TBD
P
OUT
= 4 W
11
13
dB
P
OUT(W-CDMA)
ACPR: -45dBc
1
W
D(W-CDMA)
ACPR: -45dBc
25
%
(1) 1 dB Compression point
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LET21004
PowerFLAT
TM
MECHANICAL DATA
mm
Inch
MIN.
TYP.
MAX
MIN.
TYP.
MAX
A
0.90
1.00
0.035
0.039
A1
0.02
0.05
0.001
0.002
A3
0.24
0.009
AA
0.15
0.25
0.35
0.006
0.01
0.014
b
0.43
0.51
0.58
0.017
0.020
0.023
c
0.64
0.71
0.79
0.025
0.028
0.031
D
5.00
0.197
d
0.30
0.011
E
5.00
0.197
E2
2.49
2.57
2.64
0.098
0.101
0.104
e
1.27
0.050
f
3.37
0.132
g
0.74
0.03
h
0.21
0.008
DIM.
LET21004
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