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TARGET DATA
January, 24 2003
LET21030C
RF POWER TRANSISTORS
Ldmos Enhanced Technology
Designed for GSM / EDGE / IS-97 / WCDMA
applications
EXCELLENT THERMAL STABILITY
P
OUT
= 30 W with 11 dB gain @ 2170 MHz
BeO FREE PACKAGE
INTERNAL INPUT MATCHING
ESD PROTECTION
DESCRIPTION
The
LET21030C
is a common source N-Channel
enhancement-mode lateral Field-Effect RF power
transistor designed for broadband commercial and
industrial applications at frequencies up to 2.1
GHz. The
LET21030C
is designed for high gain and
broadband performance operating in common
source mode at 26 V. Its internal matching makes
it ideal for base station applications requiring high
linearity.
PIN CONNECTION
1. Drain
2. Gate
3. Source
1
2
3
CASE 465E03, STYLE 1
epoxy sealed
ORDER CODE
LET21030C
BRANDING
LET21030C
ABSOLUTE MAXIMUM RATINGS (T
CASE
= 25
C)
Symbol
Parameter
Value
Unit
V
(BR)DSS
Drain-Source Voltage
65
V
V
GS
Gate-Source Voltage
-0.5 to +15
V
I
D
Drain Current
4
A
P
DISS
Power Dissipation (@ Tc = 70 C)
65
W
Tj
Max. Operating Junction Temperature
200
C
T
STG
Storage Temperature
-65 to +200
C
THERMAL DATA
R
th(j-c)
Junction -Case Thermal Resistance
2
C/W
LET21030C
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ELECTRICAL SPECIFICATION (T
CASE
= 25
C)
STATIC (Per Section)
ESD PROTECTION CHARACTERISTICS
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
V
GS
= 0 V I
D
= 20
A
65
V
I
DSS
V
GS
= 0 V
V
DS
= 26 V
1
A
I
GSS
V
GS
= 5 V V
DS
= 0 V
1
A
V
GS(Q)
V
DS
= 28 V
I
D
= TBD
2
4.5
V
V
DS(ON)
V
GS
= 10 V
I
D
= 1 A
0.29
0.4
V
G
FS
V
DS
= 10 V
I
D
= 1 A
2
mho
C
ISS
*
V
GS
= 0 V
V
DD
= 26 V
f = 1 MHz
TBD
pF
C
OSS
V
GS
= 0 V
V
DD
= 26 V
f = 1 MHz
TBD
pF
C
RSS
V
GS
= 0 V
V
DS
= 26 V
f = 1 MHz
TBD
pF
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
DYNAMIC (
f = 2170 MHz
)
P
OUT
(1)
V
DD
= 26 V I
DQ
= TBD
30
35
W
D
(1)
V
DD
= 26 V I
DQ
= TBD
45
50
%
Load
mismatch
V
DD
= 26 V P
OUT
= 30 W
ALL PHASE ANGLES
10:1
VSWR
DYNAMIC (
f = 2110 - 2170 MHz
)
P
OUT
(1)
V
DD
= 26 V I
DQ
= TBD
25
30
W
D
(1)
V
DD
= 26 V I
DQ
= TBD
40
45
%
G
P
V
DD
= 26 V
I
DQ
= TBD mA P
OUT
= 30 W
11
dB
P
OUT(W-CDMA)
(2)
ACPR -45 dBc
5
W
D(W-CDMA)
(2)
ACPR -45 dBc
20
%
Test Conditions
Class
Human Body Model
2
Machine Model
M3
* Including input matching capacitor in package ?
(1) 1 dB Compression point
(2) +/- 5 MHz offset; 3.84 MHz Bandwitdh
LET21030C
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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