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TARGET DATA
January, 28 2003
LET8180
RF POWER TRANSISTORS
Ldmos Enhanced Technology
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
EXCELLENT THERMAL STABILITY
COMMON SOURCE CONFIGURATION,
PUSH-PULL
P
OUT
= 220 W with 17 dB TYP. gain @ 860 MHz
BeO FREE PACKAGE
INTERNAL INPUT MATCHING
ESD PROTECTION
DESCRIPTION
The LET8180 is a common source N-Channel
enhancement-mode lateral Field-Effect RF power
transistor designed for broadband commercial and
industrial applications at frequencies up to 1.0
GHz. The LET8180 is designed for high gain and
broadband performance operating in common
source mode at 32 V. Its internal matching makes
it ideal for base station applications requiring high
linearity.
PIN CONNECTION
1
3
5
2
1. Drain
2. Drain
3. Source
4. Gate
5. Gate
4
M252
epoxy sealed
ORDER CODE
LET8180
BRANDING
LET8180
ABSOLUTE MAXIMUM RATINGS (T
CASE
= 25
C)
Symbol
Parameter
Value
Unit
V
(BR)DSS
Drain-Source Voltage
65
V
V
GS
Gate-Source Voltage
-0.5 to +15
V
I
D
Drain Current
18
A
P
DISS
Power Dissipation (@ Tc =+70 C)
289
W
Tj
Max. Operating Junction Temperature
200
C
T
STG
Storage Temperature
-65 to +150
C
THERMAL DATA
R
th(j-c)
Junction -Case Thermal Resistance
0.45
C/W
LET8180
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ELECTRICAL SPECIFICATION (T
CASE
= 25
C)
STATIC (Per Section)
ESD PROTECTION CHARACTERISTICS
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
V
GS
= 0 V
I
D
= 10
A
65
V
I
DSS
V
GS
= 0 V
V
DS
= 32 V
10
A
I
GSS
V
GS
= 5 V
V
DS
= 0 V
1
A
V
GS(Q)
V
DS
= 32 V
I
D
= TBD
2.5
4.5
V
V
DS(ON)
V
GS
= 10 V
I
D
= 3 A
0.28
0.45
V
G
FS
V
DS
= 10 V
I
D
= 3 A
2.6
mho
C
ISS
*
V
GS
= 0 V
V
DS
= 32 V
f = 1 MHz
TBD
pF
C
OSS
V
GS
= 0 V
V
DS
= 32 V
f = 1 MHz
70
pF
C
RSS
V
GS
= 0 V
V
DS
= 32 V
f = 1 MHz
2.5
pF
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
DYNAMIC (
f = 860 MHz
)
P
OUT
(1)
V
DD
= 32 V I
DQ
= TBD
200
220
W
D
(1)
V
DD
= 32 V I
DQ
= TBD
50
60
%
G
P
(2)
V
DD
= 32 V I
DQ
= TBD P
OUT
= 200 W PEP
16
17
dB
IMD3
(2)
V
DD
= 32 V I
DQ
= TBD P
OUT
= 200 W PEP
-31
dBc
Load
mismatch
V
DD
= 32 V I
DQ
= TBD P
OUT
= 200 W
ALL PHASE ANGLES
10:1
VSWR
DYNAMIC (
f = 470 - 860 MHz
)
P
OUT
(1)
V
DD
= 32 V I
DQ
= TBD
180
W
D
(1)
V
DD
= 32 V I
DQ
= TBD
50
%
G
P
(1)
V
DD
= 32 V I
DQ
= TBD
14.5
dB
Test Conditions
Class
Human Body Model
2
Machine Model
M3
* Includes Internal Input Moscap.
(1) 1 dB Compression point
(2) f1 = 860 MHz, f2 = 860.1 MHz
LET8180
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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