ChipFind - документация

Электронный компонент: LET9060C

Скачать:  PDF   ZIP
1/5
PRELIMINARY DATA
November, 4 2002
LET9060C
RF POWER TRANSISTORS
Ldmos Enhanced Technology
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
EXCELLENT THERMAL STABILITY
COMMON SOURCE CONFIGURATION
P
OUT
= 60 W WITH 17.3 dB gain @ 945 MHz
BeO FREE PACKAGE
HIGH GAIN
ESD PROTECTION
DESCRIPTION
The LET9060C is an N-Channel enhancement-mode
lateral Field-Effect RF power transistor, designed for
high gain broadband, commercial and industrial
applications. It operates at 28 V in common source
mode at frequencies up to 1.0 GHz. LET9060C
boasts the excellent gain, linearity and reliability of the
ST latest LDMOS technology. Its superior
performances make it an ideal solution for base
station applications.
PIN CONNECTION
1
3
2
1. Drain
2. Gate
3. Source
M243
epoxy sealed
ORDER CODE
LET9060C
BRANDING
LET9060C
ABSOLUTE MAXIMUM RATINGS (T
CASE
= 25
C)
Symbol
Parameter
Value
Unit
V
(BR)DSS
Drain-Source Voltage
65
V
V
GS
Gate-Source Voltage
-0.5 to +15
V
I
D
Drain Current
7
A
P
DISS
Power Dissipation (@ Tc = 70C)
118
W
Tj
Max. Operating Junction Temperature
200
C
T
STG
Storage Temperature
-65 to +150
C
THERMAL DATA
R
th(j-c)
Junction -Case Thermal Resistance
1.1
C/W
LET9060C
2/5
ELECTRICAL SPECIFICATION (T
CASE
= 25
C)
STATIC
DYNAMIC
IMPEDANCE DATA
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
V
GS
= 0 V
I
DS
= 1 mA
65
V
I
DSS
V
GS
= 0 V
V
DS
= 28 V
1
A
I
GSS
V
GS
= 5 V
V
DS
= 0 V
1
A
V
GS(Q)
V
DS
= 28 V
I
D
= 100 mA
2.0
5.0
V
V
DS(ON)
V
GS
= 10 V
I
D
= 3 A
0.7
0.8
V
G
FS
V
DS
= 10 V
I
D
= 3 A
2.3
mho
C
ISS
V
GS
= 0 V
V
DS
= 28 V
f = 1 MHz
69.5
pF
C
OSS
V
GS
= 0 V
V
DS
= 28 V
f = 1 MHz
38
pF
C
RSS
V
GS
= 0 V
V
DS
= 28 V
f = 1 MHz
1.6
pF
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
P
1dB
V
DD
= 26 V
I
DQ
= 250 mA
f = 945 MHz
60
65
W
G
P
V
DD
= 26 V I
DQ
= 250 mA
P
OUT
= 60 W
f = 945 MHz
17.3
dB
D
V
DD
= 26 V I
DQ
= 250 mA
P
OUT
= 60 W
f = 945 MHz
60
%
Load
mismatch
V
DD
= 26 V I
DQ
= 250 mA
P
OUT
= 60 W
f = 945 MHz
ALL PHASE ANGLES
5:1
VSWR
FREQ.
Z
IN
(
)
Z
DL
(
)
925 MHz
TBD
TBD
945 MHz
TBD
TBD
960 MHz
TBD
TBD
Typical Input
Impedance
Typical Drain
Load Impedance
Zin
Z
DL
G
D
S
3/5
LET9060C
TYPICAL PERFORMANCE
Power Gain vs. Output
Power
10
12
14
16
18
20
22
0
10
20
30
40
50
60
70
80
P out (W )
Gp
(
d
B
)
f = 945 MH z
Vc c = 26 V
Idq = 250 m A
Efficiency
vs.
Output Power
0
10
20
30
40
50
60
70
0
10
2 0
30
40
50
60
70
80
P ou t (W )
E
ff (
%
)
f = 945 MHz
Vc c = 26 V
Idq = 250 m A
LET9060C
4/5
Controlling dimension: Inches
1022142E
M243 (.230 x .360 2L N/HERM W/FLG) MECHANICAL DATA
mm
Inch
MIN.
TYP.
MAX
MIN.
TYP.
MAX
A
5.21
5.72
0.205
0.225
B
5.46
6.48
0.215
0.255
C
5.59
6.10
0.220
0.240
D
14.27
0.562
E
20.07
20.57
0.790
0.810
F
8.89
9.40
0.350
0.370
G
0.10
0.15
0.004
0.006
H
3.18
4.45
0.125
0.175
I
1.83
2.24
0.072
0.088
J
1.27
1.78
0.050
0.070
DIM.
5/5
LET9060C
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is registered trademark of STMicroelectronics
2002 STMicroelectronics - All Rights Reserved
All other names are the property of their respective owners.
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -
Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.
http://www.st.com