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PRELIMINARY DATA
March, 25 2003
LET9060S
RF POWER TRANSISTORS
Ldmos Enhanced Technology in Plastic Package
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
EXCELLENT THERMAL STABILITY
COMMON SOURCE CONFIGURATION
P
OUT
= 60 W with 17 dB gain @ 945 MHz / 26V
NEW RF PLASTIC PACKAGE
HIGH GAIN
ESD PROTECTION
AVAILABLE IN TAPE & REEL with TR SUFFIX
DESCRIPTION
The LET9060S is a common source N-Channel,
enhancement-mode lateral Field-Effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It operates
at 26 V in common source mode at frequencies up
to 1 GHz. LET9060S boasts the excellent gain,
linearity and reliability of ST's latest LDMOS
technology mounted in the first true SMD plastic
RF power package, PowerSO-10RF. LET9060S's
superior linearity performance makes it an ideal
solution for base station applications.
The PowerSO-10 plastic package, designed to
offer high reliability, is the first ST JEDEC
approved, high power SMD package. It has been
specially optmized for RF needs and offers
excellent RF performances and ease of assembly.
ABSOLUTE MAXIMUM RATINGS (T
CASE
= 25
C)
Symbol
Parameter
Value
Unit
V
(BR)DSS
Drain-Source Voltage
65
V
V
GS
Gate-Source Voltage
-0.5 to +15
V
I
D
Drain Current
7
A
P
DISS
Power Dissipation
170
W
Tj
Max. Operating Junction Temperature
165
C
T
STG
Storage Temperature
-65 to +150
C
THERMAL DATA
R
th(j-c)
Junction -Case Thermal Resistance
0.7
C/W
Mounting recommendations are available in
www.st.com/rf/ (look for application note AN1294)
PIN CONNECTION
GATE
SOURCE
DRAIN
PowerSO-10RF
(straight lead)
ORDER CODE
LET9060S
BRANDING
LET9060S
3/10
LET9060S
FREQ. MHz
Z
IN
(
)
Z
DL
(
)
860
0.65 - j 0.05
2.0 + j 0.1
880
0.75 - j 0.6
2.0 + j 0.1
900
0.9 - j 1.4
1.4 + j 0.2
920
0.4 - j 1.3
1.4 + j 0.5
940
0.4 - j 0.8
1.2 + j 0.3
960
0.5 - j 1.6
1.8 + j 1.0
IMPEDANCE DATA
Typical Input
Impedance
Typical Drain
Load Impedance
G
D
S
Z
DL
Zin
ESD PROTECTION CHARACTERISTICS
MOISTURE SENSITIVITY LEVEL
Test Conditions
Class
Human Body Model
2
Machine Model
M3
Test Methodology
Rating
J-STD-020B
MSL 3
LET9060S
4/10
Ouput Power Vs Drain Voltage
0
10
20
30
40
50
60
70
80
90
10
12
14
16
18
20
22
24
26
28
30
32
Vdd (V)
P
out
(
W
)
Pin = 2.5 W
Idq = 250 mA
Efficiency Vs Output Power
0
10
20
30
40
50
60
70
0
10
20
30
40
50
60
70
80
90
Pout (W)
Nd
(%)
Vdd = 26 V
Idq = 250 mA
Power Gain Vs
Output Power
1
10
100
1000
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28 30
Vds (V)
C (p
F)
Coss
Ciss
Crss
f = 1MHz
TYPICAL PERFORMANCE
Power Gain Vs
Output Power
12
13
14
15
16
17
18
19
20
1
10
100
Pout (W)
Gp
(
d
B
)
Vdd = 26 V
Idq = 250 mA
Idq = 400 mA
Idq = 600 mA
5/10
LET9060S
Input Return Loss Vs Frequency
-20
-16
-12
-8
-4
0
910
920
930
940
950
960
970
f (MHz)
RL
(d
B
)
Vdd = 26 V
Idq = 250 mA
Pout = 60 W
TYPICAL PERFORMANCE
(BROADBAND)
Power Gain Vs Frequency
12
13
14
15
16
17
18
19
20
910
920
930
940
950
960
970
f (MHz)
Gp
(
d
B
)
Vdd = 26 V
Idq = 250 mA
Pout = 60 W
Efficiency Vs Frequency
40
45
50
55
60
65
70
75
80
910
920
930
940
950
960
970
f (MHz)
Nd
(%
)
Vdd = 26 V
Idq = 250 mA
Pout = 60 W
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