STMicroelectronics
HD & Cons. Division -VA-
M29DW.ppt ptfl0402-504
www.st.com/flash
M29DWxxx FAMILY
Multiple Bank
M29DWxxx FAMILY
Multiple Bank
FLASH NOR
HIGH DENSITY & CONSUMER
May, 2004
page 2
www.st.com/flash
HD & Cons. Division - May, 2004
M29DW.ppt release 1.0 ptfl0402-504-
Family Overview
Densities from 32Mb to 64Mb
0.15m process technology
Wide application area covered
technology shrink on going
higher densities
improved performances
Increased reliability
page 3
www.st.com/flash
HD & Cons. Division - May, 2004
M29DW.ppt release 1.0 ptfl0402-504-
Main Features
M29DW323
Supply Voltage
Vcc = 2.7V to 3.6V for Program, Erase and Read
Vpp = 12V for fast Program (optional)
Programming Time
10s per Byte/Word typical
Double Word / Quadruple Byte Program
Low Power Consumption
Standby and Automatic Standby
32Mb (4Mbx8 / 2Mbx16), Boot Block
Access Time
70, 90ns
Dual Operations:
Read in one bank or group of banks while Program or
Erase in the other
page 4
www.st.com/flash
HD & Cons. Division - May, 2004
M29DW.ppt release 1.0 ptfl0402-504-
Bank Architecture
M29DW323
M29DW323
M29DW323
M29DW323
DUAL BANK Memory Array 8Mb + 24Mb
While Programming or Erasing in Bank A,
Read operations are possible in Bank B
and viceversa
page 5
www.st.com/flash
HD & Cons. Division - May, 2004
M29DW.ppt release 1.0 ptfl0402-504-
Main Features
M29DW324
M29DW324
M29DW324
M29DW324
Supply Voltage
Vcc = 2.7V to 3.6V for Program, Erase and Read
Vpp = 12V for fast Program (optional)
Programming Time
10s per Byte/Word typical
Double Word / Quadruple Byte Program
Low Power Consumption
Standby and Automatic Standby
32Mb (4Mbx8 / 2Mbx16), Boot Block
Access Time
70, 90ns
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