BD707/709/711
BD708/712
COMPLEMENTARY SILICON POWER TRANSISTORS
s
COMPLEMENTARY PNP - NPN DEVICES
APPLICATION
s
LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION
The BD707, BD709 and BD711 are silicon
Epitaxial-Base NPN power transistors in Jedec
TO-220 plastic package. They are intented for
use in power linear and switching applications.
The BD707 and BD711 complementary PNP
types are BD708 and BD712 respectively.
INTERNAL SCHEMATIC DIAGRAM
September 1999
1
2
3
TO-220
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Val ue
Un it
NPN
BD707
BD709
BD711
PNP
BD708
BD712
V
CBO
Collector-Base Voltage (I
E
= 0)
60
80
100
V
V
CER
Collector-Emitter Voltage (V
BE
= 0)
60
80
100
V
V
CEO
Collector-Emitter Voltage (I
B
= 0)
60
80
100
V
V
EBO
Emitter-Base Voltage (I
C
= 0)
5
V
I
C
Collector Current
12
A
I
CM
Collector Peak Current
18
A
I
B
Base Current
5
A
P
tot
T otal Dissipation at T
c
25
o
C
75
W
T
s tg
Storage Temperat ure
-65 t o 150
o
C
T
j
Max. Operating Junction Temperature
150
o
C
For PNP types voltage and current values are negative
1/6
THERMAL DATA
R
thj -case
R
thj -case
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
1.67
70
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
Symbo l
Parameter
Test Con ditions
Min.
T yp.
Max.
Unit
I
CBO
Collector Cut -of f
Current (I
E
= 0)
for BD707/708
V
CB
= 60 V
for BD709
V
CB
= 80 V
for BD711/712
V
CB
= 100 V
T
case
= 150
o
C
for BD707/708
V
CB
= 60 V
for BD709
V
CB
= 80 V
for BD711/712
V
CB
= 100 V
100
100
100
1
1
1
A
A
A
mA
mA
mA
I
CEO
Collector Cut -of f
Current (I
B
= 0)
for BD707/708
V
CE
= 30 V
for BD709
V
CE
= 40 V
for BD711/712
V
CE
= 50 V
100
100
100
mA
mA
mA
I
EBO
Emitter Cut-off Current
(I
C
= 0)
V
EB
= 5 V
1
mA
V
CEO (s us)
Collector-Emitter
Sustaining Voltage
(I
B
= 0)
I
C
= 100 mA
for BD707/708
for BD709
for BD711/ 712
60
80
100
V
V
V
V
CE(sat)
Collector-Emitter
Sat uration Volt age
I
C
= 4 A
I
B
= 0. 4 A
1
V
V
CEK
Knee Voltage
I
C
= 3 A
I
B
= **
0. 4
V
V
BE
Base-Emitter Voltage
I
C
= 4 A
V
CE
= 4 V
1. 5
V
h
F E
DC Current Gain
I
C
= 0. 5 A
V
CE
= 2 V
I
C
= 2 A
V
CE
= 2 V
for BD707/708
for BD709
I
C
= 4 A
V
CE
= 4 V
I
C
= 10 A
V
CE
= 4 V
for BD707/708
f or BD709
for BD711/ 712
40
30
30
15
5
120
10
8
8
400
150
f
T
Transition frequency
I
C
= 300 mA
V
CE
= 3 V
3
MHz
Pulsed: Pulse duration = 300
s, duty cycle 1.5 %
** Value for which I
C
= 3.3 A at V
CE
= 2V.
For PNP types voltage and current values are negative.
BD707/708/709/711/712
2/6
Safe Operating Areas
DC Current Gain(NPN type)
DC Transconductance(NPNtype)
Derating Curve
DC Current Gain(PNP type)
DC Transconductance(PNPtype)
BD707/708/709/711/712
3/6
Collector-Emitter Saturation Voltage (NPN type)
Collector-Emitter Saturation Voltage (PNP type)
Base-Emitter Saturation Voltage (NPN type)
Base-Emitter Saturation Voltage (PNP type)
Transition Frequency (NPN type)
Transition Frequency (PNP type)
BD707/708/709/711/712
4/6
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
0.107
D1
1.27
0.050
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
G
4.95
5.15
0.194
0.203
G1
2.4
2.7
0.094
0.106
H2
10.0
10.40
0.393
0.409
L2
16.4
0.645
L4
13.0
14.0
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.2
6.6
0.244
0.260
L9
3.5
3.93
0.137
0.154
DIA.
3.75
3.85
0.147
0.151
P011C
TO-220 MECHANICAL DATA
BD707/708/709/711/712
5/6
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