1/10
April 2004
s
HIGH SPEED:
t
PD
= 10ns (TYP.) at V
CC
= 6V
s
LOW POWER DISSIPATION:
I
CC
= 4
A(MAX.) at T
A
=25C
s
HIGH NOISE IMMUNITY:
V
NIH
= V
NIL
= 28% V
CC
(MIN.)
s
SYMMETRICAL OUTPUT IMPEDANCE:
|I
OH
| = I
OL
= 6mA (MIN)
s
BALANCED PROPAGATION DELAYS:
t
PLH
t
PHL
s
WIDE OPERATING VOLTAGE RANGE:
V
CC
(OPR) = 2V to 6V
s
PIN AND FUNCTION COMPATIBLE WITH
54 SERIES 244
s
SPACE GRADE-1: ESA SCC QUALIFIED
s
50 krad QUALIFIED, 100 krad AVAILABLE ON
REQUEST
s
NO SEL UNDER HIGH LET HEAVY IONS
IRRADIATION
s
DEVICE FULLY COMPLIANT WITH
SCC-9401-048
DESCRIPTION
The 54HC244 is an advanced high-speed CMOS
OCTAL BUS BUFFER (3-STATE) fabricated with
silicon gate C
2
MOS technology.
G control input governs four BUS BUFFERs.
This device is designed to be used with 3 state
memory address drivers, etc.
All inputs are equipped with protection circuits
against static discharge and transient excess
voltage.
M54HC244
RAD-HARD OCTAL BUS BUFFER
WITH 3 STATE OUTPUTS (NON INVERTED)
PIN CONNECTION
ORDER CODES
PACKAGE
FM
EM
DILC
M54HC244D
M54HC244D1
FPC
M54HC244K
M54HC244K1
DILC-20
FPC-20
M54HC244
3/10
ABSOLUTE MAXIMUM RATINGS
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Value
Unit
V
CC
Supply Voltage
-0.5 to +7
V
V
I
DC Input Voltage
-0.5 to V
CC
+ 0.5
V
V
O
DC Output Voltage
-0.5 to V
CC
+ 0.5
V
I
IK
DC Input Diode Current
20
mA
I
OK
DC Output Diode Current
20
mA
I
O
DC Output Current
35
mA
I
CC
or I
GND
DC V
CC
or Ground Current
70
mA
P
D
Power Dissipation
420
mW
T
stg
Storage Temperature
-65 to +150
C
T
L
Lead Temperature (10 sec)
265
C
Symbol
Parameter
Value
Unit
V
CC
Supply Voltage
2 to 6
V
V
I
Input Voltage
0 to V
CC
V
V
O
Output Voltage
0 to V
CC
V
T
op
Operating Temperature
-55 to 125
C
t
r
, t
f
Input Rise and Fall Time
V
CC
= 2.0V
0 to 1000
ns
V
CC
= 4.5V
0 to 500
ns
V
CC
= 6.0V
0 to 400
ns
M54HC244
5/10
AC ELECTRICAL CHARACTERISTICS (C
L
= 50 pF, Input t
r
= t
f
= 6ns)
CAPACITIVE CHARACTERISTICS
1) C
PD
is defined as the value of the IC's internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I
CC(opr)
= C
PD
x V
CC
x f
IN
+ I
CC
/8 (per circuit)
Symbol
Parameter
Test Conditions
Value
Unit
V
CC
(V)
C
L
(pF)
T
A
= 25C
-40 to 85C
-55 to 125C
Min.
Typ.
Max.
Min.
Max.
Min.
Max.
t
TLH
t
THL
Output Transition
Time
2.0
50
25
60
75
90
ns
4.5
7
12
19
18
6.0
6
10
13
15
t
PLH
t
PHL
Propagation Delay
Time
2.0
50
36
90
115
135
ns
4.5
12
18
23
27
6.0
10
15
20
23
2.0
150
51
130
165
195
ns
4.5
17
26
33
39
6.0
14
22
28
33
t
PZL
t
PZH
High Impedance
Output Enable
Time
2.0
50
R
L
= 1 K
48
125
155
190
ns
4.5
16
25
31
38
6.0
14
21
25
32
2.0
150
R
L
= 1 K
63
165
205
250
ns
4.5
21
33
41
50
6.0
18
28
35
43
t
PLZ
t
PHZ
High Impedance
Output Disable
Time
2.0
50
R
L
= 1 K
32
125
155
190
ns
4.5
15
25
31
38
6.0
14
21
26
32
Symbol
Parameter
Test Condition
Value
Unit
V
CC
(V)
T
A
= 25C
-40 to 85C
-55 to 125C
Min.
Typ.
Max.
Min.
Max.
Min.
Max.
C
IN
Input Capacitance
5.0
5
10
10
10
pF
C
OUT
Output
Capacitance
5.0
10
pF
C
PD
Power Dissipation
Capacitance (note
1)
5.0
33
pF
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