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Электронный компонент: MJE13007

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MJE13007
SILICON NPN SWITCHING TRANSISTOR
s
SGS-THOMSON PREFERRED SALESTYPE
s
NPN TRANSISTOR
s
HIGH CURRENT CAPABILITY
APPLICATIONS
s
SWITCHING REGULATORS
s
MOTOR CONTROL
DESCRIPTION
The MJE13007 is a silicon multiepitaxial mesa
NPN power transistor mounted in Jedec TO-220
plastic package.
It is are inteded for use in motor control, switching
regulators etc.
INTERNAL SCHEMATIC DIAGRAM
June 1998
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Val ue
Uni t
V
CEV
Collector-Emit ter Voltage (V
BE
= -1.5V)
700
V
V
CEO
Collector-Emit ter Voltage (I
B
= 0)
400
V
V
EBO
Emitter-Base Voltage (I
C
= 0)
9
V
I
C
Collector Current
8
A
I
CM
Collector Peak Current
16
A
I
B
Base Current
4
A
I
BM
Base Peak Current
8
A
I
E
Emitter Current
12
A
I
EM
Emitter Peak Current
24
A
P
t ot
Tot al Dissipation at T
c
25
o
C
80
W
T
stg
Storage Temperature
-65 to 150
o
C
T
j
Max. O perat ing Junction Temperature
150
o
C
1
2
3
TO-220
1/4
THERMAL DATA
R
t hj-ca se
Thermal Resistance Junction-case
Max
1.56
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
I
CEV
Collect or Cut-off
Current (V
BE
= -1.5V)
V
CE
= rated V
CEV
V
CE
= rated V
CEV
T
c
= 100
o
C
1
5
mA
mA
I
EBO
Emitt er Cut-off Current
(I
C
= 0)
V
EB
= 9 V
1
mA
V
CEO(sus )
Collect or-Emitter
Sustaining Voltage
I
C
= 10 mA
400
V
V
CE(sat )
Collect or-Emitter
Saturat ion Voltage
I
C
= 2 A
I
B
= 0.4 A
I
C
= 5 A
I
B
= 1 A
I
C
= 8 A
I
B
= 2 A
I
C
= 5 A
I
B
= 1 A
T
c
= 100
o
C
1
1.5
3
2
V
V
V
V
V
BE(s at)
Base-Emitt er
Saturat ion Voltage
I
C
= 2 A
I
B
= 0.4 A
I
C
= 5 A
I
B
= 1 A
I
C
= 5 A
I
B
= 1 A
T
c
= 100
o
C
1.2
1.6
1.5
V
V
V
h
FE
DC Current G ain
I
C
= 2 A
V
CE
= 5 V
I
C
= 5 A
V
CE
= 5 V
8
6
40
30
f
T
Transit ion F requency
I
C
= 0. 5 A
V
CE
= 10 V
f = 1 MHz
4
MHz
C
CBO
Output Capacit ance
I
E
= 0
V
CB
= 10 V
f = 0.1 MHz
110
pF
RESISTIVE LOAD
Symb ol
Parameter
Test Co ndi tio ns
Min .
Typ.
Max.
Unit
t
on
Turn-on T ime
V
CC
= 125 V
I
C
= 5 A
I
B1
= -I
B2
= 1 A
t
p
= 25
s Duty Cycle < 1%
0.7
s
t
s
St orage Time
3
ms
t
f
Fall Time
0.7
ms
INDUCTIVE LOAD
Symb ol
Parameter
Test Co ndi tio ns
Min .
Typ.
Max.
Unit
t
f
Fall Time
V
CC
= 125 V
I
C
= 5 A
I
B1
= 1 A
t
p
= 25
s Duty Cycle < 1%
0.3
s
t
f
Fall Time
V
CC
= 125 V
I
C
= 5 A
I
B1
= 1 A
t
p
= 25
s Duty Cycle < 1%
T
c
= 100
o
C
0.6
s
* Pulsed: Pulse duration = 300
s, duty cycle 2 %
MJE13007
2/4
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
0.107
D1
1.27
0.050
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
G
4.95
5.15
0.194
0.203
G1
2.4
2.7
0.094
0.106
H2
10.0
10.40
0.393
0.409
L2
16.4
0.645
L4
13.0
14.0
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.2
6.6
0.244
0.260
L9
3.5
3.93
0.137
0.154
DIA.
3.75
3.85
0.147
0.151
P011C
TO-220 MECHANICAL DATA
MJE13007
3/4
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical compone nts in life support devices or systems without express written approval of STMicroelectronics.
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1998 STMicroelectronics Printed in Italy All Rights Reserved
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MJE13007
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