MJE2955T
MJE3055T
COMPLEMENTARY SILICON POWER TRANSISTORS
s
SGS-THOMSON PREFERRED SALESTYPES
s
COMPLEMENTARY PNP - NPN DEVICES
DESCRIPTION
The MJE3055T is a silicon epitaxial-base NPN
transistor in Jedec TO-220 package. It is
intended for power switching circuits and
general-purpose amplifiers. The complementary
PNP type is MJE2955T.
INTERNAL SCHEMATIC DIAGRAM
June 1997
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
CEO
Collector-Emitter Voltage (I
B
= 0)
60
V
V
CBO
Collector-Base Voltage (I
E
= 0)
70
V
V
EBO
Emitter-Base Voltage (I
C
= 0)
5
V
I
C
Collector Current
10
A
I
B
Base Current
6
A
P
tot
Total Power Dissipation at T
ca se
25
o
C
75
W
T
stg
Storage Temperature
-55 to 150
o
C
T
j
Max. Operating Junction Temperature
150
o
C
For PNP types voltage and current values are negative.
1
2
3
TO-220
1/4
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case Max
1.66
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CEO
Collector Cut-off
Current (I
B
= 0)
V
CE
= 30 V
700
A
I
CEX
Collector Cut-off
Current (V
BE
= 1.5V)
V
CE
= 70 V
T
CASE =
150
o
C
1
5
mA
mA
I
CBO
Collector Cut-off
Current (I
E
= 0)
V
CBO
= 70 V
T
CASE =
150
o
C
1
10
mA
mA
I
EBO
Emitter Cut-off Current
(I
C
= 0)
V
EBO
= 5 V
5
mA
V
CEO(sus)
Collector-Emitter
Sustaining Voltage
I
C
= 200 mA
60
V
V
CE(sat)
Collector-Emitter
Sustaining Voltage
I
C
= 4 A I
B
= 0.4 A
I
C
= 10 A I
B
= 3.3 A
1.1
8
V
V
V
BE(on)
Base-Emitter on
Voltage
I
C
= 4 A V
CE
= 4 V
1.8
V
h
FE
DC Current Gain
I
C
= 4 A V
CE
= 4 V
I
C
= 10 A V
CE
= 4 V
20
5
70
f
T
Transistor Frequency
I
C
= 500 mA V
CE
= 10 V
f = 500 KHz
2
MHz
Pulsed: Pulse duration = 300
s, duty cycle
2 %
For PNP type voltage and current values are negative.
MJE2955T / MJE3055T
2/4
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
0.107
D1
1.27
0.050
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
G
4.95
5.15
0.194
0.203
G1
2.4
2.7
0.094
0.106
H2
10.0
10.40
0.393
0.409
L2
16.4
0.645
L4
13.0
14.0
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.2
6.6
0.244
0.260
L9
3.5
3.93
0.137
0.154
DIA.
3.75
3.85
0.147
0.151
L6
A
C
D
E
D1
F
G
L7
L2
Dia.
F1
L5
L4
H2
L9
F2
G1
TO-220 MECHANICAL DATA
P011C
MJE2955T / MJE3055T
3/4
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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MJE2955T / MJE3055T
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