S12xxxH
January 1995
SCR
Symbol
Parameter
Value
Unit
I
T(RMS)
RMS on-state current
(180
conduction angle)
Tc= 90
C
12
A
I
T(AV)
Average on-state current
(180
conduction angle)
Tc= 90
C
7.6
A
I
TSM
Non repetitive surge peak on-state current
(T
j
initial = 25
C )
tp = 8.3 ms
132
A
tp = 10 ms
120
I
2
t
I
2
t Value for fusing
tp = 10 ms
72
A
2
s
dI/dt
Critical rate of rise of on-state current
I
G
= 100 mA
di
G
/dt = 1 A/
s.
100
A/
s
T
stg
T
j
Storage and operating junction temperature range
- 40, + 150
- 40, + 125
C
Tl
Maximum lead temperature for soldering during 10s at
4.5mm from case
260
C
ABSOLUTE RATINGS (limiting values)
TO220
non-insulated
(Plastic)
I
T(RMS)
= 12A
V
DRM
= 200V to 800V
High surge current capability
FEATURES
Symbol
Parameter
Voltage
Unit
B
D
M
N
V
DRM
V
RRM
Repetitive peak off-state voltage
T
j
= 125
C
200
400
600
800
V
The S12xxxH series of SCRs uses a high
performance MESA GLASS PNPN technology.
These parts are intended for general purpose
applications.
DESCRIPTION
K
G
A
1/5
P
G (AV)
= 1 W P
GM
= 10 W (tp = 20
s)
I
GM
= 4A (tp = 20
s)
GATE CHARACTERISTICS (maximum values)
Symbol
Parameter
Value
Unit
Rth(j-a)
Junction to ambient
60
C/W
Rth(j-c)
Junction to case for DC
3
C/W
THERMAL RESISTANCES
Symbol
Test Conditions
Sensitivity
Unit
06
10
17
I
GT
V
D
=12V (DC) R
L
=33
Tj= 25
C
MIN
0.5
10
4
mA
MAX
5
25
15
V
GT
V
D
=12V (DC) R
L
=33
Tj= 25
C
MAX
1.5
V
V
GD
V
D
=V
DRM
R
L
=3.3k
Tj= 125
C
MIN
0.2
V
tgt
V
D
=V
DRM
I
TM
= 3 x I
T(AV
)
dI
G
/dt = 0.5A/
s
I
G
= 40mA
Tj= 25
C
TYP
2
s
I
H
I
T
= 250mA Gate open
Tj= 25
C
MAX
15
50
30
mA
I
L
I
G
=1.2 I
GT
Tj= 25
C
MAX
30
100
60
mA
V
TM
I
TM
= 24A tp= 380
s
Tj= 25
C
MAX
1.6
V
I
DRM
I
RRM
V
D
= V
DRM
V
R
= V
RRM
Tj= 25
C
MAX
5
A
Tj= 110
C
MAX
1.5
mA
dV/dt
V
D
=67%V
DRM
Gate open
Tj= 110
C
MIN
200
100
V/
s
Tj= 110
C
TYP
10
tq
I
TM
= 3 x I
T(AV
) V
R
=35V
dI/dt=10A/
s
tp=100
s
dV/dt=5V/
s
V
D
= 67%V
DRM
Tj= 110
C
MAX
100
s
ELECTRICAL CHARACTERISTICS
ORDERING INFORMATION
S
12
17
M
H
SCR MESA GLASS
CURRENT
PACKAGE :
H = TO220 Non-insulated
VOLTAGE
SENSITIVITY
S12xxxH
2/5
0
1
2
3
4
5
6
7
8
9
10 11
12
0
2
4
6
8
10
12
P (W)
360
O
= 1 80
o
= 120
o
= 90
o
= 60
o
= 30
o
DC
I
(A)
T(AV)
Fig.1 : Maximum average power dissipation ver-
sus average on-state current.
0
10
20
30
40
50
60
70
80
90 100 110 120 130
0
2
4
6
8
10
12
14
I
(A)
T(AV)
= 180
o
DC
Tcase ( C)
o
Fig.3 : Average on-state current versus case tem-
perature.
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
Igt
Tj( C)
o
Ih
-40
-20
0
20
40
60
80
100
120 140
Igt[Tj]
Igt[Tj=25 C]
o
Ih[Tj]
Ih[Tj=25 C]
o
Fig.5 : Relative variation of gate trigger current and
holding current versus junction temperature.
0
20
40
60
80
100
120
140
0
2
4
6
8
10
12
-85
-95
-105
-115
-125
P (W)
Tcase ( C)
o
= 180
o
Tamb ( C)
o
Rth = 0 C/W
2 C/W
4 C/W
6 C/W
o
o
o
o
Fig.2 : Correlation between maximum average
power dissipation and maximum allowable tem-
perature (Tamb and Tcase) for different thermal
resistances heatsink + contact.
1E-3
1E-2
1E-1
1E +0
1 E +1
1E +2 5 E+2
0.01
0.1
1
Zth/Rth
Zt h( j-c )
Zt h( j-a )
tp (s )
Fig.4 : Relative variation of thermal impedance
versus pulse duration.
1
10
100
100 0
0
20
40
60
80
100
120
140
Tj initial = 25 C
o
Number of cycles
I
(A)
TSM
Fig.6 : Non repetitive surge peak on-state current
versus number of cycles.
S12xxxH
3/5
1
10
10
100
1000
I
(A). I
2
t (A
2
s)
TSM
Tj initial = 25 C
o
ITSM
tp(ms)
I
2
t
Fig.7 : Non repetitive surge peak on-state current
for a sinusoidal pulse with width : tp
10ms, and
corresponding value of I
2
t.
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
1
10
100
200
I
(A)
TM
Tj in itial
25 C
o
Tj max
V
(V)
TM
Tj max
Vto =0.85 V
Rt =0.0 30
Fig.8 : On-state characteristics (maximum values).
S12xxxH
4/5
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THO MSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectronics.
1995 SGS-THOMSON Microelectronics - All rights reserved.
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
PACKAGE MECHANICAL DATA
TO220 Non-insulated (Plastic)
D
G
I
H
J
B
A
L
N1
M
N
O
P
C
F
REF.
DIMENSIONS
Millimeters
Inches
Typ.
Min. Max. Typ.
Min. Max.
A
10.3
0.406
B
6.3
6.5
0.248 0.256
C
9.1
0.358
D
12.7
0.500
F
4.2
0.165
G
3.0
0.118
H
4.5
4.7
0.177 0.185
I
3.53
3.66
0.139 0.144
J
1.2
1.3
0.047 0.051
L
0.9
0.035
M
2.7
0.106
N
5.3
0.209
N1
2.54
0.100
O
1.2
1.4
0.047 0.055
P
1.15
0.045
Marking : type number
Weight : 1.8 g
S12xxxH
5/5
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