S2000AFI
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
s
STMicroelectronics PREFERRED
SALESTYPE
s
HIGH VOLTAGE CAPABILITY
s
U.L. RECOGNISED ISOWATT218 PACKAGE
(U.L. FILE # E81734 (N).
APPLICATIONS:
s
HORIZONTAL DEFLECTION FOR COLOUR
TV
DESCRIPTION
The
S2000AFI
is
manufactured
using
Multiepitaxial Mesa technology for cost-effective
high performance and uses a Hollow Emitter
structure to enhance switching speeds.
INTERNAL SCHEMATIC DIAGRAM
December 1999
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
CES
Collect or-Emitt er Voltage (V
BE
= 0)
1500
V
V
CEO
Collect or-Emitt er Voltage (I
B
= 0)
700
V
V
EBO
Emitt er-Base Voltage (I
C
= 0)
10
V
I
C
Collect or Current
8
A
I
CM
Collect or Peak Current (t
p
< 5 ms)
15
A
P
t ot
Total Dissipation at T
c
= 25
o
C
50
W
T
stg
St orage Temperature
-65 to 150
o
C
T
j
Max. Operating Junction Temperature
150
o
C
1
2
3
ISOWATT218
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THERMAL DATA
R
t hj-ca se
Thermal Resistance Junction-case
Max
2.5
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
I
CES
Collect or Cut-off
Current (V
BE
= 0)
V
CE
= 1500 V
T
C
= 125
o
C
V
CE
= 1500 V
1
2
mA
mA
I
EBO
Emitt er Cut-off Current
(I
C
= 0)
V
EB
= 5 V
100
A
V
CEO(sus )
Collect or-Emitter
Sustaining Voltage
(I
B
= 0)
I
C
= 100 mA
700
V
V
EBO
Emitt er Base Voltage
(I
C
= 0)
I
E
= 10 mA
10
V
V
CE(sat )
Collect or-Emitter
Saturat ion Voltage
I
C
= 4. 5 A
I
B
= 2 A
1
V
V
BE(s at)
Base-Emitt er
Saturat ion Voltage
I
C
= 4. 5 A
I
B
= 2 A
1.3
V
t
s
t
f
INDUCTIVE LOAD
St orage Time
Fall T ime
I
C
= 4. 5 A
h
FE
= 2.5
V
CC
= 140 V
L
C
= 0. 9 mH
L
B
= 3
H
7
0. 55
s
s
f
T
Transit ion F requency
I
C
= 0. 1 A
V
CE
= 5 V
f = 5 MHz
7
MHz
Pulsed: Pulse duration = 300
s, duty cycle 1.5 %
Safe Operating Area.
Thermal Impedance
S2000AFI
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DC Current Gain
Base Emitter Saturation Voltage
Switching Time Inductive Load (see figure 1)
Collector Emitter Saturation Voltage
Switching Time Inductive Load
S2000AFI
3/6
Figure 1: Inductive Load Switching Test Circuit.
S2000AFI
4/6
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
5.35
5.65
0.211
0.222
C
3.30
3.80
0.130
0.150
D
2.90
3.10
0.114
0.122
D1
1.88
2.08
0.074
0.082
E
0.75
0.95
0.030
0.037
F
1.05
1.25
0.041
0.049
F2
1.50
1.70
0.059
0.067
F3
1.90
2.10
0.075
0.083
G
10.80
11.20
0.425
0.441
H
15.80
16.20
0.622
0.638
L
9
0.354
L1
20.80
21.20
0.819
0.835
L2
19.10
19.90
0.752
0.783
L3
22.80
23.60
0.898
0.929
L4
40.50
42.50
1.594
1.673
L5
4.85
5.25
0.191
0.207
L6
20.25
20.75
0.797
0.817
N
2.1
2.3
0.083
0.091
R
4.6
0.181
DIA
3.5
3.7
0.138
0.146
P025C/A
ISOWATT218 MECHANICAL DATA
- Weight : 4.9 g (typ.)
- Maximum Torque (applied to mounting flange) Recommended: 0.8 Nm; Maximum: 1 Nm
- The side of the dissipator must be flat within 80
m
S2000AFI
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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
1999 STMicroelectronics Printed in Italy All Rights Reserved
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