SD2904
RF POWER TRANSISTORS
HF/VHF/UHF N-CHANNEL MOSFETs
s
GOLD METALLIZATION
s
COMMON SOURCE CONFIGURATION
s
2 - 500 MHz
s
30 WATTS
s
28 VOLTS
s
9.5 dB MIN. AT 400 MHz
s
CLASS A OR AB OPERATION
s
EXCELLENT THERMAL STABILITY
DESCRIPTION
The SD2904 is a gold metallized N-Channel MOS
field-effect RF power transistor. It is intended for
use in 28 V DC large signal applications up to
500 MHz
PIN CONNECTION
November 1999
ABSOLUTE MAXIMUM RATINGS (T
case
= 25
o
C)
Symbol
Parameter
Val ue
Uni t
V
(BR)DSS
Drain Source Volt age
65
V
V
DGR
Drain-Gate Voltage (R
G S
=1M
)
65
V
V
G S
Gat e-Source Voltage
20
V
I
D
Drain Current
5
A
P
DI SS
Power Dissipat ion
100
W
T
j
Max. O perat ing Junction Temperature
200
o
C
T
STG
Storage Temperature
-65 to 150
o
C
THERMAL DATA
R
th (j-c)
R
th(c -s)
Junct ion-Case T hermal Resistance
Case-Heatsink T hermal Resist ance
1.75
0.30
o
C/ W
o
C/ W
* Determined using a flat aluminum or copper heatsink with thermal compound applied (Dow Corning 340 or equivalent).
M113
epoxy sealed
ORDER CODE
BRANDING
SD2904
SD2904
1. Drain
3.Gate
2. Source
4. Source
1/8
ELECTRICAL SPECIFICATION (T
case
= 25
o
C)
STATIC
Symb ol
Parameter
Mi n.
Typ .
Max.
Un it
V
(BR)DSS
V
G S
= 0V
I
DS
= 30 mA
65
V
I
DSS
V
G S
= 0V
V
DS
= 28 V
3
mA
I
GSS
V
G S
= 20V
V
DS
= 0 V
2
A
V
GS(Q)
V
DS
= 10V
I
D
= 60 mA
1. 0
6.0
V
V
DS( ON)
V
G S
= 10V
I
D
= 3 A
1.6
V
g
FS
V
DS
= 10V
I
D
= 3 A
1. 2
mho
C
ISS
V
G S
= 0V
V
DS
= 28 V
f = 1 MHz
47
pF
C
OSS
V
G S
= 0V
V
DS
= 28 V
f = 1 MHz
35
pF
C
RSS
V
G S
= 0V
V
DS
= 28 V
f = 1 MHz
7
pF
DYNAMIC
Symb ol
Parameter
Mi n.
Typ .
Max.
Un it
P
O UT
f = 400 MHz
V
DD
= 28 V
I
DQ
= 50 mA
30
W
G
PS
f = 400 MHz
V
DD
= 28 V
P
out
= 30 W
I
DQ
= 50 mA
9. 5
11. 5
dB
D
f = 400 MHz
V
DD
= 28 V
P
out
= 30 W
I
DQ
= 50 mA
45
55
%
Load
Mismatch
f = 400 MHz
V
DD
= 28 V
P
out
= 30 W
I
DQ
= 50 mA
All Angles
10: 1
VSW R
IMPEDANCE DATA
FREQ .
Z
IN
(
)
Z
DL
(
)
400 MHz
2.0 - j 2.4
5. 6 + j 0.4
REF. 1021310H
SD2904
2/8
Capacitance vs Drain-Source Voltage
0
10
20
30
1
10
100
1000
VDS. DRAIN-SOURCEVOLTAGE (VOLTS)
C,
CAPACITANCES
(pF)
Ciss
Crss
Coss
f = 1 MHz
GC8 2 480
Drain Current vs Gate Voltage
Maximum Thermal Resistance vs Case
Temperature
25
40
55
70
85
1. 7
1. 9
2. 1
Tc, CASE TEMPERATURE (C)
RTH(j-c)
(C/W)
GC8 2 49 0
Gate-Source Voltages vs Case Temperature
-25
0
25
50
75
100
0.95
0.99
1.03
Tc, CASE TEMPERATURE (C)
VGS,
GATE-SOURCE
VOLTAGE
(NORMALIZED)
VDD= 10V
ID= 1.25A
ID = 200mA
ID = 500mA
ID = 1 A
ID = 25 mA
ID = 750mA
GC82510
5
6
7
8
9
10
0
1
2
3
4
5
VGS, GATE-SOURCE VOLTAGE (VOLTS)
ID,
DRAIN
CURRENT
(A)
VDS = 10V
T = 25
C
T = 80
C
T = -20
C
GC82 500
TYPICAL PERFORMANCE
SD2904
3/8
13
18
23
28
0
10
20
30
40
50
VDD, SUPPLY VOLTAGE (VOLTS)
Pout,
OUTPUT
POWER
(WATTS)
Pin = 4.8 W
Pin = 2.4 W
Pin = 1.2 W
IDQ = 5 0 mA
f = 40 0 MHz
GC82 54 0
Output Power vs Input Power
0
1
2
3
4
0
10
20
30
40
Pin, INPUT POWER (W)
Pout,
OUTPUT
POWER
(W)
Vd d = 2 8 V
Tc= 2 5
C
f = 40 0 MHz
IDQ = 5 0 mA
GC82 52 0
Vdd = 1 3.5 V
Output Power vs Input Power
0
1
2
3
4
0
10
20
30
40
50
Pin, INPUT POWER (W)
Pout,
OUTPUT
POWER
(W)
T = -20C
T = 25 C
T = 80C
IDQ = 50 mA
VDD = 28 V
f = 400 MHz
GC8 253 0
Output Power vs Voltage Supply
Output Power vs Gate Voltage
- 6
- 4
-2
0
2
4
6
0
10
20
30
40
VGS, GATE-SOURCE VOLTAGE (VOLTS)
Pout,
OUTPUT
POWER
(W)
VDD = 28 V
IDQ = 50 mA
f = 400 MHz
Pi n = Co ns tant
T = 80
C
T = -20
C
T = 25
C
GC825 50
Power Gain vs Output Power
1
6
11
16
21
26
31
36
41
10
11
12
13
14
Pout, OUTPUT POWER (W)
PG,
POWER
GAIN
(dB)
f = 40 0 MHz
VDD = 28 V
IDQ = 50 mA
GC8 25 60
Efficiency vs Output Power
1
6
11
16
21
26
31
36
41
0
20
40
60
80
Pout, OUTPUT POWER (W)
EFFICIENCY
(%)
f = 400 MHz
VDD = 28 V
IDQ = 50 mA
GC825 7 0
TYPICAL PERFORMANCE
SD2904
4/8
400 MHz Test Circuit Schematic
400 MHz Test Circuit Component Part List
SD2904
5/8
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