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March, 11 2003
SD56120M
RF POWER TRANSISTORS
The
LdmoST FAMILY
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
EXCELLENT THERMAL STABILITY
COMMON SOURCE CONFIGURATION, PUSH-
PULL
P
OUT
= 120 W WITH 13 dB gain @ 860 MHz /32V
BeO FREE PACKAGE
INTERNAL INPUT MATCHING
DESCRIPTION
The SD56120M is a common source N-Channel en-
hancement-mode lateral Field-Effect RF power
transistor designed for broadband commercial and
industrial applications at frequencies up to 1.0 GHz.
The SD56120M is designed for high gain and broad-
band performance operating in common source
mode at 32 V. Its internal matching makes it ideal for
TV broadcast applications requiring high linearity.
PIN CONNECTION
1
3
5
2
1. Drain
2. Drain
3. Source
4. Gate
5. Gate
4
M252
epoxy sealed
ORDER CODE
SD56120M
BRANDING
SD56120M
ABSOLUTE MAXIMUM RATINGS (T
CASE
= 25
C)
Symbol
Parameter
Value
Unit
V
(BR)DSS
Drain-Source Voltage
65
V
V
GS
Gate-Source Voltage
20
V
I
D
Drain Current
14
A
P
DISS
Power Dissipation (@ Tc = 70C)
236
W
Tj
Max. Operating Junction Temperature
200
C
T
STG
Storage Temperature
-65 to +150
C
THERMAL DATA
R
th(j-c)
Junction -Case Thermal Resistance
0.55
C/W
SD56120M
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ELECTRICAL SPECIFICATION (T
CASE
= 25C)
STATIC (Per Section)
* Includes Internal Input Moscap.
DYNAMIC
IMPEDANCE DATA
Measured drain to drain and gate to gate respectively.
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
V
GS
= 0 V
I
DS
= 10 mA
65
V
I
DSS
V
GS
= 0 V
V
DS
= 28 V
1
A
I
GSS
V
GS
= 20 V
V
DS
= 0 V
1
A
V
GS(Q)
V
DS
= 28 V
I
D
= 100 mA
2.0
5.0
V
V
DS(ON)
V
GS
= 10 V
I
D
= 3 A
0.7
0.8
V
G
FS
V
DS
= 10 V
I
D
= 3 A
3
mho
C
ISS
*
V
GS
= 0 V
V
DS
= 28 V
f = 1 MHz
221
pF
C
OSS
V
GS
= 0 V
V
DS
= 28 V
f = 1 MHz
48.9
pF
C
RSS
V
GS
= 0 V
V
DS
= 28 V
f = 1 MHz
2.25
pF
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
P
OUT
V
DD
= 32 V
I
DQ
= 400 mA
f = 860 MHz
120
W
G
PS
V
DD
= 32 V I
DQ
= 400 mA
P
OUT
= 120 W
f = 860 MHz
13
16
dB
D
V
DD
= 32 V I
DQ
= 400 mA
P
OUT
= 120 W
f = 860 MHz
50
%
Load
mismatch
V
DD
= 32 V I
DQ
= 400 mA
P
OUT
= 120 W
f = 860 MHz
ALL PHASE ANGLES
10:1
VSWR
FREQ.
Z
IN
(
)
Z
DL
(
)
860 MHz
5.57 + j 3.488
4.21 - j 2.88
Typical Input
Impedance
Typical Drain
Load Impedance
Zin
Z
DL
G
D
S
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SD56120M
TYPICAL PERFORMANCE
Capacitance vs. Drain Voltage
0
5
10
15
20
25
30
Vds, DRAIN-SOURCE VOLTAGE (V)
1
10
100
1000
C
,
C
APAC
IT
AN
C
E
(
p
F
)
Ciss
Coss
Crss
f =1 MHz
Gate-Source Voltage vs. Case Temperature
-20
0
20
40
60
80
Tc, CASE TEMPERATURE (C)
0.96
0.97
0.98
0.99
1
1.01
1.02
1.03
V
g
s
,
G
A
T
E
-S
O
URCE
V
O
LT
A
G
E
(NO
R
M
A
LI
Z
E
V
DS
= 10 V
I
D
= 1 A
I
D
= 5 A
I
D
= 2 A
I
D
= 4 A
I
D
= 3 A
Drain Current vs. Gate Voltage
0
1
2
3
4
5
6
Vgs, GATE-SOURCE VOLTAGE (V)
0
1
2
3
4
5
6
7
8
9
I
d
,
DRA
I
N
CURRE
NT
(A
)
Vds= 10V
SD56120M
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TYPICAL PERFORMANCE
Output Power & Efficiency vs. Input Power
0
1
2
3
4
5
6
Pin, INPUT POW ER (W )
0
20
40
60
80
100
120
140
160
180
P
o
u
t, O
U
T
P
U
T
P
O
W
E
R
(
W
)
20
30
40
50
60
70
80
90
100
Nd
,
E
FFI
CI
E
NCY
(
%
)
Vdd = 32 V
Idq= 2 x 200 mA
f = 860 MHz
Eff
Pout
Power Gain vs. Output Power
1
10
100
1000
Pout, OUTPUT POWER (W)
12
13
14
15
16
17
18
19
20
Gp
, POW
E
R
GAIN
(
d
B)
Vdd = 32V
f = 860 MHz
Idq = 2 x 400mA
Idq = 2 x 600mA
Idq = 2 x 300mA
Idq = 2 x 200mA
Intermodulation Distortion vs. Output Power
Output Power vs. Drain Voltage
0
30
60
90
120
150
Pout, OUTPUT POWER (WPEP)
-50
-45
-40
-35
-30
-25
-20
-15
-10
I
M
D3
,
I
N
TE
RMO
DUL
A
T
I
O
N DI
S
T
O
R
TI
O
N
(
d
B
c
)
f1= 860 MHz
f2= 859.9 MHz
Vdd = 32 V
Idq = 2 x 625 mA
Idq = 2 x 400 mA
Idq = 2 x 200 mA
12
16
20
24
28
32
36
Vds, DRAIN VOLTAGE (V)
0
30
60
90
120
150
180
210
P
o
u
t, O
U
T
P
U
T
P
O
W
E
R
(
W
)
Vdd = 32 V
Idq = 2 x 200 mA
f = 860 MHz
Pin = 1.25 W
Pin = 2.5 W
Pin = 5 W
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SD56120M
TEST CIRCUIT SCHEMATIC
TEST CIRCUIT COMPONENT PART LIST
COMPONENT
DESCRIPTION
C1, C2, C10, C11
51 pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR
C3
9.1 pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR
C4, C8
0.6 - 4.5 GIGATRIM VARIABLE CAPACITOR
C5, C9
5.6 pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR
C6
12 pF ATC 100A SURFACE MOUNT CERAMIC CHIP CAPACITOR
C7
13 pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR
C12, C15, C18, C22
91 pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR
C13, C16, C20, C24
10
F 50V ALUMINUM ELECTROLYTIC RADIAL LEAD CAPACITOR
C14, C17, C21, C25
0.1
F 500V SURFACE MOUNT CERAMIC CHIP CAPACITOR
C19, C23
100
F 63V ALUMINUM ELECTROLYTIC RADIAL LEAD CAPACITOR
R1, R2, R3, R4
200 OHM 1/4 W SURFACE MOUNT CHIP RESISTOR
R5, R6
1.8 OHM 1/4 W SURFACE MOUNT CHIP RESISTOR
B1, B2
BALUN, 25 OHM SEMI-RIDGE OD="0.141", 2.37 LG COAXIAL CABLE OR
EQUIVALENT
L1, L2
CHIP INDICATOR 10 nH SURFACE MOUNT COIL
FB1, FB2
SURFACE MOUNT EMI SHIELD BEAD
PCB
WOVEN GLASS REINFORCED / CERAMIC FILLED 0.030" THK
r = 3.48, 2 Oz
ED CU BOTH SIDES
D.U.T.
REF. 7248365A
NOTEs:
1. C3 AND C4 ADJACENT TO EACH OTHER
2. GAP BETWEEN GROUND & TRANSMISSION LINE = 0.056 [1.42] TYP.
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