SMBYT03
October 1999 - Ed : 2C
FAST RECOVERY RECTIFIER DIODES
DESCRIPTION
FEATURES
SMC
Symbol
Parameter
Value
Unit
I
F(RMS)
RMS forward current
10
A
I
F(AV)
Average forward current
Tl=55
C
= 0.5
3
A
I
FSM
Non repetitive surge peak forward current
tp=10ms
sinusoidal
60
A
Tstg
Tj
Storage and junction temperature range
- 40 to + 150
- 40 to + 150
C
C
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
RRM
Repetitive peak reverse voltage
400
V
Symbol
Parameter
Value
Unit
Rth (j-l)
Junction-leads
20
C/W
THERMAL RESISTANCE
VERY LOW REVERSE RECOVERY TIME
VERY LOW SWITCHING LOSSES
LOW NOISE TURN-OFF SWITCHING
SURFACE MOUNT DEVICE
Single high voltage rectifier ranging from 200V to
400 V suited for Switch Mode Power Supplies and
other power converters.
1/5
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
V
F *
Tj = 25
C
I
F
= 3 A
1.5
V
T
j
= 100
C
1.05
1.4
I
R
**
T
j
= 25
C
V
R
= V
RRM
10
A
T
j
= 100
C
0.2
0.6
mA
Pulse test : * tp = 380
s, duty cycle < 2 %
** tp = 5 ms, duty cycle < 2 %
ELECTRICAL CHARACTERISTICS
STATIC CHARACTERISTICS
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
trr
T
j
= 25
C
I
F
= 0.5A
I
R
= 1A
Irr = 0.25A
25
ns
I
F
= 1A
V
R
= 30V
dI
F
/dt = -15A/
s
60
RECOVERY CHARACTERISTICS
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
t
IRM
V
CC
= 200V I
F
= 3A Lp
0.05
H
T
j
= 100
C dI
F
/dt = -50A/
s
35
50
ns
I
RM
1.5
2
A
To evaluate the conduction losses use the following equation :
P = 1.1 x I
F(AV)
+ 0.08 x I
F
2
(RMS)
TURN-OFF SWITCHING CHARACTERISTICS (Without serie inductance)
Voltage (V)
200
300
400
Marking
C2
C3
C4
Laser marking
Logo indicates cathode
SMBYT03
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0.001
0.01
0.1
1
10
0
2
4
6
8
10
12
14
16
18
20
IM
t
=0.5
t(s)
IM(A)
Tc=25 C
o
Tc=55 C
o
Tc=40 C
o
Fig.3 : Non repetitive surge peak forward current
versus overload duration.
0.001
0.01
0.1
1
10
0.01
0.1
1
Zth(j-c) (tp.
)
K =
Rth(j-c)
= 0 . 5
= 0 . 2
= 0 . 1
Single pulse
tp(s)
T
=tp/T
tp
K
Fig.4 : Relative variation of thermal impedance
junction to lead versus pulse duration.
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
10
20
30
40
50
60
P=0.5W
T
I
M
=tp/T
tp
IM(A)
P=1.5W
P=2.5W
Fig.2 : Peak current versus form factor.
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
=0.05
=0.1
=0.2
=0.5
T
=tp/T
tp
IF(av)(A)
PF(av)(W)
=1
Fig.1 : Low frequency power losses versus
average current.
0
20
40
60
80
100
120
140
160
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
T
=tp/T
tp
=0.5
F(av)(A)
I
o
Tamb( C)
1cm Cu
2
Rth(j-a)=65
C/W
o
Rth(j-a)=Rth(j-l)
Fig.6 : Average current versus ambient
temperature. (duty cycle : 0.5)
0.01
0.1
1
10
0.0
0.3
0.6
0.9
1.2
1.5
1.8
2.1
2.4
2.7
3.0
I FM(A)
VFM(V)
Tl=100
C
o
50
Fig.5 : Voltage drop versus forward current.
(Maximum values)
SMBYT03
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Fig.10 : Recovery charge versus dIF/dt.
(typical values)
Fig.9 : Peak reverse current versus dIF/dt.
Fig.7 : Recovery time versus dI
F
/dt.
Fig.8 : Peak forward voltage versus dI
F
/dt.
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
0
10
20
30
40
50
60
70
80
90
100
Rth(j-a)
2
Scu(cm )
Printed circuit : epoxy (e=35um)
Fig.12 : Thermal resistance junction to ambient
versus copper surface under each lead.
Fig.11 : Dynamic parameters versus junction
temperature.
SMBYT03
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PACKAGE MECHANICAL DATA
SMC
REF.
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
A1
1.90
2.45
0.075
0.096
A2
0.05
0.20
0.002
0.008
b
2.90
3.2
0.114
0.126
c
0.15
0.41
0.006
0.016
E
7.75
8.15
0.305
0.321
E1
6.60
7.15
0.260
0.281
E2
4.40
4.70
0.173
0.185
D
5.55
6.25
0.218
0.246
L
0.75
1.60
0.030
0.063
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2.0
4.2
2.0
3.3
FOOTPRINT DIMENSIONS
SMC
E
C
L
E1
D
A1
A2
b
SMBYT03
5/5
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