ST1803DFH
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
s
NEW Fully Plastic TO-220 for HIGH
VOLTAGE APPLICATIONS
s
NEW SERIES, ENHANCED PERFORMANCE
s
INTEGRATED FREE WHEELING DIODE
s
HIGH VOLTAGE CAPABILITY ( > 1500 V )
s
HIGH SWITCHING SPEED
s
TIGTHER hfe CONTROL
s
IMPROVED RUGGEDNESS
s
FULLY INSULATED PACKAGE (U.L.
COMPLIANT) FOR EASY MOUNTING
s
CREEPAGE DISTANCE PATH > 4 mm
APPLICATIONS:
s
HORIZONTAL DEFLECTION FOR COLOR
TVS
DESCRIPTION
The device is manufactured using Diffused
Collector technology for more stable operation Vs
base drive circuit variations resulting in very low
worst case dissipation.
INTERNAL SCHEMATIC DIAGRAM
December 2002
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
CBO
Collector-Base Voltage (I
E
= 0)
1500
V
V
CEO
Collector-Emitter Voltage (I
B
= 0)
600
V
V
EBO
Emitter-Base Voltage (I
C
= 0)
7
V
I
C
Collector Current
10
A
I
CM
Collector Peak Current (t
p
< 5 ms)
15
A
I
B
Base Current
4
A
P
tot
Total Dissipation at T
c
= 25
o
C
40
W
V
isol
Insulation Withstand Voltage (RMS) from All
Three Leads to External Heatsink
2500
V
T
stg
Storage Temperature
-65 to 150
o
C
T
j
Max. Operating Junction Temperature
150
o
C
TO-220FH
R
BE
=20
Typ.
1/6
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case Max
3.125
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CES
Collector Cut-off
Current (V
BE
= 0)
V
CE
= 1500 V
V
CE
= 1500 V T
j
= 125
o
C
1
2
mA
mA
I
EBO
Emitter Cut-off Current
(I
C
= 0)
V
EB
= 4 V
130
400
mA
V
(BR)EBO
Emitter-Base
Breakdown Voltage
(I
C
= 0)
I
E
= 700 mA
7
V
V
CE(sat)
Collector-Emitter
Saturation Voltage
I
C
= 4 A I
B
= 0.8 A
I
C
= 4 A I
B
= 1.2 A
3
5
1.5
V
V
V
BE(sat)
Base-Emitter
Saturation Voltage
I
C
= 4 A I
B
= 0.8 A
1.2
V
h
FE
DC Current Gain
I
C
= 1 A V
CE
= 5 V
I
C
= 4.5 A V
CE
= 1 V
I
C
= 4.5 A V
CE
= 5 V
10
5
15
5
20
9
V
F
Diode Forward Voltage
I
F
= 5 A
1.5
2
V
t
s
t
f
INDUCTIVE LOAD
Storage Time
Fall Time
I
C
= 4 A I
Bon(END)
= 0.8 A
L
B
= 5
H V
BB
= -2.5 V
f = 16 KHz (see figure 1)
2.7
0.3
4
0.6
s
s
Pulsed: Pulse duration = 300
s, duty cycle 1.5 %
Safe Operating Area
Thermal Impedance
ST1803DFH
2/6
Derating Curve
Collector Emitter Saturation Voltage
DC Current Gain
Output Characteristics
Base Emitter Saturation Voltage
DC Current Gain
ST1803DFH
3/6
Figure 1: Inductive Load Switching Test Circuit.
Power losses
Switching Time Inductive Load
Reverse Biased SOA
ST1803DFH
4/6
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.4
4.6
0.173
0.181
B
2.5
2.7
0.098
0.106
D
2.5
2.75
0.098
0.108
E
0.45
0.7
0.017
0.027
F
0.75
1
0.030
0.039
F1
1.3
1.8
0.051
0.070
F2
1.3
1.8
0.051
0.070
G
4.95
5.2
0.195
0.204
G1
2.4
2.7
0.094
0.106
H
10
10.4
0.393
0.409
L2
16
0.630
L3
28.6
30.6
1.126
1.204
L4
9.8
10.6
0.385
0.417
L5
3.4
0.134
L6
15.9
16.4
0.626
0.645
L7
9
9.3
0.354
0.366
L8
14.5
15
0.570
0.590
L9
2.4
0.094
P011W
TO-220FH (Fully plastic High voltage) MECHANICAL DATA
ST1803DFH
5/6
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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2002 STMicroelectronics Printed in Italy All Rights Reserved
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ST1803DFH
6/6
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