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October 2003
ST2001FX
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
NEW SERIES, ENHANCED PERFORMANCE
FULLY INSULATED PACKAGE (U.L.
COMPLIANT) FOR EASY MOUNTING
HIGH VOLTAGE CAPABILITY
HIGH SWITCHING SPEED
TIGTHER hfe CONTROL
IMPROVED RUGGEDNESS
APPLICATIONS:
HORIZONTAL DEFLECTION FOR COLOR TVS
OVER 21 INCHES AND 15 INCHES MONITORS
DESCRIPTION
T he d e vi ce i s m an u fa ctu r ed u si n g Di ff us ed
Collector technology for more stable operation Vs
base drive circuit variations resulting in very low
worst case dissipation.
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
CBO
Collector-Base Voltage (I
E
= 0)
1500
V
V
CEO
Collector-Emitter Voltage (I
B
= 0)
600
V
V
EBO
Emitter-Base Voltage (I
C
= 0)
7
V
I
C
Collector Current
10
A
I
CM
Collector Peak Current (t
p
< 5 ms)
20
A
I
B
Base Current
7
A
P
tot
Total Dissipation at T
c
= 25 C
63
W
V
ins
Insulation Withstand Voltage (RMS) from All Three
Leads to External Heatsink
2500
V
T
stg
Storage Temperature
65 to 150
C
T
j
Max. Operating Junction Temperature
150
C
ISOWATT218FX
INTERNAL SCHEMATIC DIAGRAM
ST2001FX
2/7
THERMAL DATA
ELECTRICAL CHARACTERISTICS (T
j
= 25 C unless otherwise specified)
* Pulsed: Pulse duration = 300 s, duty cycle = 1.5 %.
R
thj-case
Thermal Resistance Junction-case
Max
2
C/W
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CES
Collector Cut-off
Current (V
BE
= 0)
V
CE
= 1500 V
V
CE
= 1500 V
T
j
= 125 C
1
2
mA
mA
I
EBO
Emitter Cut-off Current
(I
C
= 0)
V
EB
= 7 V
1
mA
V
CEO(sus)
*
Collector-Emitter
Sustaining Voltage
(I
B
= 0)
I
C
= 100 mA
600
V
V
CE(sat)
*
Collector-Emitter
Saturation Voltage
I
C
= 5 A
I
B
= 1.25 A
1.5
V
V
BE(sat)
*
Base-Emitter
Saturation Voltage
I
C
= 5 A
I
B
= 1.25 A
1.2
V
h
FE
*
DC Current Gain
I
C
= 6 A
I
C
= 6 A
V
CE
= 1 V
V
CE
= 5 V
5
4.5
9
t
s
t
f
INDUCTIVE LOAD
Storage Time
Fall Time
I
C
= 5 A
I
Bon (END)
= 850 mA
L
BB(off)
= 2 H
V
BB(off)
= -2.5 V
f
h
= 64 KHz
(See Figure 1)
2.6
0.2
3
0.4
s
s
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