1/7
November, 20 2002
START450
NPN Silicon RF Transistor
SOT343 (SC70)
ORDER CODE
START450TR
BRANDING
450
APPLICATIONS
LNA FOR GSM/DCS, DECT, PCS, PCN,
CDMA, W-CDMA
PREDRIVER FOR DECT
GENERAL PURPOSE 500MHz-5GHz
COMPRESSION POINT P1dB=19dBm @ 1.8GHz
TRANSITION FREQUENCY 42GHz
HIGH LINEARITY
ULTRA MINIATURE SOT343(SC70) PACKAGE
DESCRIPTION
The START450 is a member of the START family that
provide the state of the art of RF silicon process to the
market. Manufacturated in the third generation of ST
proprietary bipolar process, it offers the best mix of
gain and NF for given breakdown voltage(BVceo).
It offers performance level only archived with GaAs
products before.
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
ceo
Collector emitter voltage
4.5
V
V
cbo
Collector base voltage
15
V
V
ebo
Emitter base voltage
1.5
V
I
c
Collector current
100
mA
I
b
Base current
10
mA
P
tot
Total dissipation, T
s
=
TBD
450
mW
T
stg
Storage temperature
-65 to 150
o
C
T
j
Max. operating junction temperature
150
o
C
R
thjs
Thermal Resistance Junction soldering point
MAX
120
o
C/W
ABSOLUTE MAXIMUM RATINGS
START450
2/7
Note(1): Gms = | S
21
/ S
12
|
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
cbo
Collector cutoff current
Vcb = 5V, Ie = 0A
150
nA
I
ebo
Emitter-base cutoff
current
Veb = 1.5V, Ic = 0A
15
A
Hfe
DC current gain
Ic = 50mA, Vce = 4V
160
NFmin
Minimim noise figure
Ic = 10mA, Vce = 2V, f = 1.8GHz,
Z
s
= Z
s
opt
1.2
dB
Ga
NFmin associated gain
Ic = 10mA, Vce = 2V, f = 1.8GHz
13
dB
|S21|
2
Insertion power gain
Ic = 50mA, Vce = 2V, f = 1.8GHz
13.7
dB
Gms
(1)
Maximum stable gain
Ic = 50mA, Vce = 2V, f = 1.8GHz
19.1
dB
P
-1dB
1dB compression point
Ic = 50mA,Vce = 3V, f = 1.8GHz
19
dBm
OIP3
Ouput third order
intercept point
Ic = 50mA,Vce = 3V, f = 1.8GHz
29
dBm
ELECTRICAL CHARACTERISTICS (T
j
=25
o
C,unless otherwise specified)
PINOUT
PIN CONNECTION
Pin No.
Description
1
BASE
3
COLLECTOR
2,4
EMITTER
SOT343
4
1
2
3
Top view
3/7
START450
Symbol
Value
Symbol
Value
Symbol
Value
TMEAS
27.0
FC
0.8
XJBC
0.3
IS
1.9E-16
EG
1.12
XTI
4.51
ISE
1.9E-12
NF
1
BF
295
NR
1
NE
2.658
VAF
40
ISC
3.19E-15
BR
13.7
VAR
2.5
IKF
{1.448*((T(
o
C)+273.15)/
300.15)^(-1.6)}
NC
1.5
TF
3.1E-12
TR
7E-10
PTF
35
VTF
27
XTF
20
ITF
4.8
MJE
0.44
RB
2.7
RBM
0.64
MJC
0.31
RC
1.38
RE
0.15
MJS
0.281
CJE
1462E-15
VJE
1.1
IKR
43.5E-3
CJC
660E-15
VJC
0.84
XTB
-0.32
CJS
425E-15
VJS
0.453
SPICE PARAMETERS (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax)
PACKAGE EQUIVALENT CIRCUIT
TRANSISTOR CHIP DATA
FOR MORE ACCURACY SIMULATION IN SATURATION REGION :
Adding the 5 Spice parameters showed in Table A and using ST Spice Library (available on request) you
can achieve a more accuracy simulation in the saturation region. ST Spice library is compatible with
following simulators: ELDO MENTOR (any version), SPECTRE CADENCE (any version), ADS (version
2001 only).
Table A (Spice Parameters extracted in saturation region)
RW
Vjj
ENP
VRP
RP
2.594
0.769
2.45
{4.64*((TEMPER+273.15)/300.15)^(1.5)}
1.00E-6
In order to avoid high complexity of the package equivalent circuit, the two emitter leads of SOT-343
package are combined in one electrical connection.
C
Transistor
Chip
B'
C'
E'
L=0.1 nH
L=0.3 nH
L3
L5
L6
C2
C=21 fF
.
.
L=0.8 nH
L1
L=0.15 nH
L=0.05 nH
L2
C=785 fF
C=740 fF
C1
C3
E
.
.
L=0.3 nH
L4
B
.
.
C
Transistor
Chip
B'
C'
E'
L=0.1 nH
L=0.3 nH
L3
L5
L6
C2
C=21 fF
.
.
L=0.8 nH
L1
L=0.15 nH
L=0.05 nH
L2
C=785 fF
C=740 fF
C1
C3
E
.
.
L=0.3 nH
L4
B
.
.
START450
4/7
COMMON EMITTER S-PARAMETERS ( V
CE
= 2V, I
C
= 50mA )
FREQ
IS
11
I
IS
21
I
IS
12
I
S
12
IS
22
I
S
22
(MHz)
0.1
0.572
-112
61.291
137
0.017
50
0.723
-75
0.5
0.740
-167
17.769
111
0.022
60
0.545
-149
0.9
0.747
-178
9.937
113
0.026
93
0.539
-163
1
0.744
179
8.736
114
0.025
103
0.534
-166
1.5
0.726
172
5.913
125
0.059
146
0.526
-171
1.8
0.715
167
4.893
128
0.060
157
0.520
-173
2
0.699
165
4.484
131
0.086
163
0.510
-175
2.5
0.646
158
3.661
139
0.128
172
0.481
-174
3
0.582
153
2.879
146
0.145
177
0.452
-173
3.5
0.523
150
2.195
154
0.189
170
0.449
-173
4
0.441
153
1.733
175
0.211
151
0.381
-178
S
11
S
21
5/7
START450
TAPE & REEL DIMENSIONS
mm
MIN.
TYP.
MAX
A
178.5
179
179.5
C
12.8
13.0
13.5
D
20.2
N
54.5
55
55.5
T
14.4
Ao
2.25
Bo
2.7
Ko
1.2
Po
3.8 (cumulative 10 Po)
4.0
4.2 (cumulative 10 Po)
P
4.0
DEVICE ORIENTATION
TOP
VIEW END
VIEW
450
450
450
450