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July, 3 2002
START540
NPN Silicon RF Transistor
SOT343 (SC70)
ORDER CODE
START540TR
BRANDING
540
APPLICATIONS
LNA FOR GSM/DCS, DECT, PDC, PCS,
PCN, CDMA, W-CDMA
GENERAL PURPOSE 500MHz-5GHz
LOW NOISE FIGURE: NFmin = 0.9dB
@ 1.8GHz, 5mA, 2V
HIGH OUTPUT IP3 = 24dBm
@ 1.8GHz, 20mA, 2V
GOOD RUGGEDNESS BVceo = 4.5V
TRANSITION FREQUENCY 45GHz
ULTRA MINIATURE SOT343 PACKAGE
DESCRIPTION
The START540 is a member of the START family
that provide the market with the state of the art of RF
silicon process. Manufacturated in the third
generation of ST proprietary bipolar process, it
offers the highest linearity with excellent Noise
Figure for 4.5V breakdown voltage(BVceo).
It reaches performance level only achieved with
GaAs products before.
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
ceo
Collector emitter voltage
4.5
V
V
cbo
Collector base voltage
15
V
V
ebo
Emitter base voltage
1.5
V
I
c
Collector current
40
mA
I
b
Base current
4
mA
P
tot
Total dissipation, T
s
=
101
180
mW
T
stg
Storage temperature
-65 to 150
o
C
T
j
Max. operating junction temperature
150
o
C
R
thjs
Thermal Resistance Junction soldering point
270
o
C/W
ABSOLUTE MAXIMUM RATINGS
START540
2/7
SOT343
4
1
2
3
Top view
Note(1): Gms = | S
21
/ S
12
|
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
cbo
Collector cutoff current
Vcb = 5V, Ie = 0A
150
nA
I
ebo
Emitter-base cutoff
current
Veb = 1.5V, Ic = 0A
15
A
Hfe
DC current gain
Ic = 20mA, Vce = 3V
100
160
NFmin
Minimim noise figure
Ic = 5mA, Vce = 2V, f = 1.8GHz,
Z
s
= Z
s
opt
0.9
dB
Ga
NFmin associated gain
Ic = 5mA, Vce = 2V, f = 1.8GHz
16
dB
|S21|
2
Insertion power gain
Ic = 20mA, Vce = 2V, f = 1.8GHz
19.5
dB
Gms
(1)
Maximum stable gain
Ic = 20mA, Vce = 2V, f = 1.8GHz
22.7
dB
P
-1dB
1dB compression point
Ic = 20mA,Vce = 2V, f = 1.8GHz
13
dBm
OIP3
Ouput third order
intercept point
Ic = 20mA,Vce = 2V, f = 1.8GHz
24
dBm
ELECTRICAL CHARACTERISTICS (T
j
=25
o
C,unless otherwise specified)
PINOUT
PIN CONNECTION
Pin No.
Description
1
BASE
3
COLLECTOR
2,4
EMITTER
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START540
COMMON EMITTER S-PARAMETERS ( V
CE
= 2V, I
C
= 20mA )
f
S
11
S
21
S
12
S
22
GHz
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
0.1
0.699
-21.6
42.32
164.0
0.009
88.9
0.942
-12.2
0.5
0.545
-89.7
27.82
119.9
0.027
58.1
0.642
-50.6
0.9
0.480
-130.0
18.42
98.1
0.036
48.1
0.431
-70.6
1
0.476
-137.4
16.86
94.0
0.038
47.2
0.397
-74.7
1.5
0.483
-166.9
11.63
76.9
0.048
41.6
0.272
-96.2
1.8
0.494
179.6
9.63
68.2
0.052
38.8
0.220
-110.7
2
0.503
172.2
8.49
63.1
0.055
36.7
0.193
-123.3
2.5
0.513
157.6
6.46
53.6
0.061
31.7
0.148
-154.4
3
0.533
147.8
5.34
45.9
0.069
26.7
0.142
-171.4
3.5
0.551
139.6
4.54
36.6
0.077
21.2
0.153
177.9
4
0.559
133.8
3.87
28.3
0.085
13.7
0.154
162.7
COMMON EMITTER S-PARAMETERS ( V
CE
= 2V, I
C
= 5mA )
f
S
11
S
21
S
12
S
22
GHz
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
0.5
0.816
-50.5
14.56
140.8
0.038
65.8
0.879
-30.3
0.9
0.715
-84.6
11.92
118.2
0.058
48.4
0.720
-49.0
1
0.695
-92.5
11.32
113.2
0.061
45.0
0.685
-53.1
1.5
0.620
-128.0
8.64
91.5
0.075
30.9
0.515
-71.9
1.8
0.589
-145.6
7.39
80.9
0.080
23.8
0.425
-81.8
2
0.581
-156.1
6.66
74.5
0.080
19.3
0.374
-88.4
2.5
0.570
-167.6
5.87
8.0
0.082
14.8
0.316
-96.8
3
0.572
167.6
4.37
51.7
0.085
5.7
0.225
-166.8
3.5
0.585
155.3
3.74
40.4
0.090
1.1
0.208
-128.4
4
0.592
146.1
3.20
30.6
0.094
-5.0
0.184
-141.2
COMMON EMITTER NOISE-PARAMETERS ( V
CE
= 2V, I
C
= 5mA )
f
F
min
opt
R
n
r
n
|S
21
|
2
F
50
GHz
dB
MAG
ANG
-
dB
dB
1.8
0.91
0.39
100.8
6.4
0.128
17.38
1.12
2
0.96
0.48
115.2
6.38
0.127
16.47
1.22
2.5
1.01
0.48
136.8
5.94
0.118
14.35
1.34
3
1.14
0.46
163
5.6
0.112
12.82
1.38
3.5
1.3
0.39
-160
5.2
0.104
11.46
1.42
4
1.4
0.32
-122.4
5
0.1
10.12
1.66
START540
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C
Transistor
Chip
B'
C'
E'
L=0.3 nH
L=0.6 nH
L3
L5 L6
C2
C=66 fF
. .
L=0.35 nH
L1
L=0.1 nH
L=0.05 nH
L2
C=334 fF
C=436 fF
C1
C3
E
.
.
L=0.6 nH
L4
B
.
.
Symbol
Value
Symbol
Value
Symbol
Value
TMEAS
27.0
FC
0.66
XJBC
0.53
IS
1.00E-16
EG
1.12
XTI
3.76
ISE
1.58E-11
NF
1
BF
320
NR
1
NE
3.27
VAF
70
ISC
1.55E-15
BR
9.52
VAR
2.3
IKF
{0.217*((T(
o
C)+273.15)/
300.15)^(-1.63)}
NC
1.495
TF
3.0E-12
TR
7E-10
PTF
32.0
VTF
27.9
XTF
9.84
ITF
0.498
MJE
0.497
RB
10.8
RBM
2.94
MJC
0.292
RC
3.77
RE
0.42
MJS
0.245
CJE
421E-15
VJE
1.03
IKR
8.32E-3
CJC
160E-15
VJC
0.6
XTB
-0.54
CJS
112E-15
VJS
0.4
SPICE PARAMETERS (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax)
PACKAGE EQUIVALENT CIRCUIT
TRANSISTOR CHIP DATA
FOR MORE ACCURACY SIMULATION IN SATURATION REGION :
Adding the 5 Spice parameters showed in Table A and using ST Spice Library (available on request) you
can achieve a more accuracy simulation in the saturation region. ST Spice library is compatible with
following simulators: ELDO MENTOR (any version), SPECTRE CADENCE (any version), ADS (version
2001 only).
Table A Table A (Spice Parameters extracted in saturation region)
RW
Vjj
ENP
VRP
RP
1.173
0.8
2.085
{4.12*((TEMPER+273.15)/300.15)^(0.303)}
1.00E-6
In order to avoid high complexity of the package equivalent circuit, the two emitter leads of SOT-343
package are combined in one electrical connection.
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START540
TAPE & REEL DIMENSIONS
mm
MIN.
TYP.
MAX
A
178.5
179
179.5
C
12.8
13.0
13.5
D
20.2
N
54.5
55
55.5
T
14.4
Ao
2.25
Bo
2.7
Ko
1.2
Po
3.8 (cumulative 10 Po)
4.0
4.2 (cumulative 10 Po)
P
4.0
DEVICE ORIENTATION
TOP
VIEW END
VIEW
540
540
540
540
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