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February 2005
STP130NS04ZB
STB130NS04ZB - STW130NS04ZB
N-CHANNEL CLAMPED - 7 m
- 80A TO-220/DPAK/TO-247
FULLY PROTECTED MESH OVERLAYTM MOSFET
Table 1: General Features
s
TYPICAL R
DS
(on) = 7 m
s
100% AVALANCHE TESTED
s
LOW CAPACITANCE AND GATE CHARGE
s
175C MAXIMUM JUNCTION TEMPERATURE
DESCRIPTION
This fully clamped MOSFET is produced by using
the latest advanced Company's Mesh Overlay
process which is based on a novel strip layout.
The inherent benefits of the new technology cou-
pled with the extra clamping capabilities make this
product particularly suitable for the harshest oper-
ation conditions such as those encountered in the
automotive environment .Any other application re-
quiring extra ruggedness is also recommended.
APPLICATIONS
s
HIGH SWITCHING CURRENT
s
LINEAR APPLICATIONS
Table 2: Order Codes
Figure 1: Package
Figure 2: Internal Schematic Diagram
TYPE
V
DSS
R
DS(on)
I
D
STP130NS04ZB
STB130NS04ZB
STW130NS04ZB
CLAMPED
CLAMPED
CLAMPED
< 9 m
< 9 m
< 9 m
80 A
80 A
80 A
1
2
3
TO-220
DPAK
1
3
1
2
3
TO-247
Sales Type
Marking
Package
Packaging
STP130NS04ZB
P130NS04ZB
TO-220
TUBE
STB130NS04ZBT4
B130NS04ZB
DPAK
TAPE & REEL
STW130NS04ZB
W130NS04ZB
TO-247
TUBE
Rev. 2
STP130NS04ZB - STB130NS04ZB - STW130NS04ZB
2/12
Table 3: Absolute Maximum ratings
( ) Pulse width limited by safe operating area
Table 4: Thermal Data
(*)When mounted on 1 inch FR4 2oZ Cu
Table 5: Avalanche Characteristics
Symbol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
GS
= 0)
CLAMPED
V
V
DG
Drain-gate Voltage
CLAMPED
V
V
GS
Gate- source Voltage
CLAMPED
V
I
D
Drain Current (continuous) at T
C
= 25C
80
A
I
D
Drain Current (continuous) at T
C
= 100C
60
A
I
DG
Drain Gate Current (continuous)
50
mA
I
GS
Gate Source Current (continuous)
50
mA
I
DM
( )
Drain Current (pulsed)
320
A
P
TOT
Total Dissipation at T
C
= 25C
300
W
Derating Factor
2.0
W/C
V
ESD(G-S)
Gate-Source ESD(HBM-C=100 pF, R=1.5 K
)
4
KV
T
j
T
stg
Max Operating Junction Temperature
Storage Temperature
-55 to 175
C
TO-220
DPAK
TO-247
Unit
Rthj-case
Thermal Resistance Junction-case Max
0.50
C/W
Rthj-pcb (*)
Thermal Resistance Junction-pcb Max
--
35
--
C/W
Rthj-a
Thermal Resistance Junction-ambient Max
62.5
--
50
T
l
Maximum Lead Temperature For Soldering
Purpose (1.6 mm from case, for 10 sec)
300
C
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
80
A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 C, I
D
= I
AR
, V
DD
= 30 V)
500
mJ
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STP130NS04ZB - STB130NS04ZB - STW130NS04ZB
ELECTRICAL CHARACTERISTICS (T
CASE
=25C UNLESS OTHERWISE SPECIFIED)
Table 6: On/Off
Table 7: Dynamic
Table 8: Source Drain Diode
(1) Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
(2) Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Clamped Voltage
I
D
= 1 mA, V
GS
= 0
-40 < Tj < 175 C
33
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= 16 V,Tj = 25 C
V
DS
= 16 V,Tj = 125 C
10
100
A
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= 10 V,Tj = 25 C
10
A
V
GSS
Gate-Source
Breakdown Voltage
I
GS
= 100 A
18
V
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
= I
D
= 1 mA
2
4
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10 V ,I
D
= 40 A
7
9
m
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
Forward
Transconductance
V
DS
= 15 V, I
D
= 40 A
50
S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
= 25 V, f = 1MHz, V
GS
= 0
2700
1275
285
pF
pF
pF
t
d(on)
t
f
t
d(off)
t
f
Turn-on Delay Time
Fall Time
Turn-off Delay Time
Fall Time
V
DD
= 17.5 V, I
D
= 40 A,
R
G
= 4.7
,
V
GS
= 10 V
(see Figure 15)
40
220
170
100
ns
ns
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 20 V, I
D
= 80 A,
V
GS
= 10 V
(see Figure 17)
80
20
27
105
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(2)
Source-drain Current
Source-drain Current (pulsed)
80
320
A
A
V
SD
(1)
Forward On Voltage
I
SD
= 80 A, V
GS
= 0
1.5
V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 80 A, di/dt = 100A/s
V
DD
= 25V, T
j
= 150C
(see Figure 16)
90
0.18
4
ns
C
A
STP130NS04ZB - STB130NS04ZB - STW130NS04ZB
4/12
Figure 3: Safe Operating Area
Figure 4: Output Characteristics
Figure 5: Transconductance
Figure 6: Thermal Impedance
Figure 7: Transfer Characteristics
Figure 8: Static Drain-source On Resistance
5/12
STP130NS04ZB - STB130NS04ZB - STW130NS04ZB
Figure 9: Gate Charge vs Gate-source Voltage
Figure 10: Normalized Gate Thereshold Volt-
age vs Temperature
Figure 11: Capacitance Variations
Figure 12: Normalized On Resistance vs Tem-
perature
Figure 13: Source-drain Diode Forward Char-
acteristics
Figure 14: Normalized BVDSS vs Temperature
STP130NS04ZB - STB130NS04ZB - STW130NS04ZB
6/12
Figure 15: Switching Times Test Circuit For
Resistive Load
Figure 16: Test Circuit For Diode Recovery Be-
haviour
Figure 17: Gate Charge Test Circuit
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STP130NS04ZB - STB130NS04ZB - STW130NS04ZB
DIM.
mm.
inch
MIN.
TYP
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
b
0.61
0.88
0.024
0.034
b1
1.15
1.70
0.045
0.066
c
0.49
0.70
0.019
0.027
D
15.25
15.75
0.60
0.620
E
10
10.40
0.393
0.409
e
2.40
2.70
0.094
0.106
e1
4.95
5.15
0.194
0.202
F
1.23
1.32
0.048
0.052
H1
6.20
6.60
0.244
0.256
J1
2.40
2.72
0.094
0.107
L
13
14
0.511
0.551
L1
3.50
3.93
0.137
0.154
L20
16.40
0.645
L30
28.90
1.137
P
3.75
3.85
0.147
0.151
Q
2.65
2.95
0.104
0.116
TO-220 MECHANICAL DATA
STP130NS04ZB - STB130NS04ZB - STW130NS04ZB
8/12
DIM.
mm.
inch
MIN.
TYP
MAX.
MIN.
TYP.
MAX.
A
4.32
4.57
0.178
0.180
A1
0.00
0.25
0.00
0.009
b
0.71
0.91
0.028
0.350
b2
1.15
1.40
0.045
0.055
c
0.46
0.61
0.018
0.024
c2
1.22
1.40
0.048
0.055
D
8.89
9.02
9.40
0.350
0.355
0.370
D1
8.01
0.315
E
10.04
10.28
0.395
0.404
e
2.54
0.010
H
13.10
13.70
0.515
0.540
L
1.30
1.70
0.051
0.067
L1
1.15
1.39
0.045
0.054
L2
1.27
1.77
0.050
0.069
L4
2.70
3.10
0.106
0.122
V2
0
8
0
8
TO-263 (D
2
PAK) MECHANICAL DATA
9/12
STP130NS04ZB - STB130NS04ZB - STW130NS04ZB
DIM.
mm.
inch
MIN.
TYP
MAX.
MIN.
TYP.
MAX.
A
4.85
5.15
0.19
0.20
A1
2.20
2.60
0.086
0.102
b
1.0
1.40
0.039
0.055
b1
2.0
2.40
0.079
0.094
b2
3.0
3.40
0.118
0.134
c
0.40
0.80
0.015
0.03
D
19.85
20.15
0.781
0.793
E
15.45
15.75
0.608
0.620
e
5.45
0.214
L
14.20
14.80
0.560
0.582
L1
3.70
4.30
0.14
0.17
L2
18.50
0.728
P
3.55
3.65
0.140
0.143
R
4.50
5.50
0.177
0.216
S
5.50
0.216
TO-247 MECHANICAL DATA
STP130NS04ZB - STB130NS04ZB - STW130NS04ZB
10/12
TAPE AND REEL SHIPMENT (suffix "T4")*
TUBE SHIPMENT (no suffix)*
D
2
PAK FOOTPRINT
* on sales type
DIM.
mm
inch
MIN.
MAX.
MIN.
MAX.
A
330
12.992
B
1.5
0.059
C
12.8
13.2
0.504
0.520
D
20.2
0795
G
24.4
26.4
0.960
1.039
N
100
3.937
T
30.4
1.197
BASE QTY
BULK QTY
1000
1000
REEL MECHANICAL DATA
DIM.
mm
inch
MIN.
MAX.
MIN.
MAX.
A0
10.5
10.7
0.413
0.421
B0
15.7
15.9
0.618
0.626
D
1.5
1.6
0.059
0.063
D1
1.59
1.61
0.062
0.063
E
1.65
1.85
0.065
0.073
F
11.4
11.6
0.449
0.456
K0
4.8
5.0
0.189
0.197
P0
3.9
4.1
0.153
0.161
P1
11.9
12.1
0.468
0.476
P2
1.9
2.1
0.075
0.082
R
50
1.574
T
0.25
0.35
0.0098 0.0137
W
23.7
24.3
0.933
0.956
TAPE MECHANICAL DATA
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STP130NS04ZB - STB130NS04ZB - STW130NS04ZB
Table 9: Revision History
Date
Revision
Description of Changes
10-June-2004
1
First Release.
14-Jan-2005
2
Inserted DPAK, Complete version.
STP130NS04ZB - STB130NS04ZB - STW130NS04ZB
12/12
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