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PRELIMINARY DATA
June 2003
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
STB36NF06L
STP36NF06L
N-CHANNEL 60V - 0.032
- 30A DPAK/TO-220
STripFETTM II POWER MOSFET
s
TYPICAL R
DS
(on) = 0.032
s
EXCEPTIONAL dv/dt CAPABILITY
s
100% AVALANCHE TESTED
s
APPLICATION ORIENTED
CHARACTERIZATION
s
SURFACE-MOUNTING DPAK (TO-263)
POWER PACKAGE IN TAPE & REEL
(SUFFIX "T4")
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature SizeTM" strip-
based process. The resulting transistor shows extremely
high packing density for low on-resistance, rugged
avalanche characteristics and less critical alignment
steps therefore a remarkable manufacturing
reproducibility.
APPLICATIONS
s
POWER TOOLS
s
AUTOMOTIVE ENVIRONMENT
TYPE
V
DSS
R
DS(on)
I
D
STB36NF06L
STP36NF06L
60 V
60 V
< 0.040
< 0.040
30 A
30 A
1
2
3
TO-220
1
3
D
2
PAK
TO-263
(Suffix "T4")
INTERNAL SCHEMATIC DIAGRAM
Ordering Information
ABSOLUTE MAXIMUM RATINGS
(
)
Pulse width limited by safe operating area.
(1) I
SD
30A, di/dt
200A/s, V
DD
V
(BR)DSS
, T
j
T
JMAX
(2) Starting T
j
= 25
o
C, I
D
= 15A, V
DD
= 30V
SALES TYPE
MARKING
PACKAGE
PACKAGING
STB36NF06L
STP36NF06L
STB36NF06L
STP36NF06L
TO-263
TO-220
TAPE & REEL
TUBE
Symbol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
GS
= 0)
60
V
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
60
V
V
GS
Gate- source Voltage
18
V
I
D
Drain Current (continuous) at T
C
= 25C
30
A
I
D
Drain Current (continuous) at T
C
= 100C
21
A
I
DM
(
)
Drain Current (pulsed)
120
A
P
tot
Total Dissipation at T
C
= 25C
70
W
Derating Factor
0.47
W/C
dv/dt
(1)
Peak Diode Recovery voltage slope
10
V/ns
E
AS(2)
Single Pulse Avalanche Energy
235
mJ
T
stg
Storage Temperature
-55 to 175
C
T
j
Operating Junction Temperature
STB36NF06L STP36NF06L
2/8
THERMAL DATA
ELECTRICAL CHARACTERISTICS (T
CASE
= 25 C UNLESS OTHERWISE SPECIFIED)
OFF
ON
(*)
DYNAMIC
Rthj-case
Rthj-amb
T
l
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose
(1.6 mm from case, for 10 sec)
Max
Max
2.14
62.5
300
C/W
C/W
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250 A, V
GS
= 0
60
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating T
C
= 125C
1
10
A
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= 18V
100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
I
D
= 250 A
1
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10 V
I
D
= 15 A
V
GS
= 5 V
I
D
= 15 A
0.032
0.040
0.048
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs (*)
Forward Transconductance
V
DS
=
25 V
I
D
= 15 A
20
S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
= 25V f = 1 MHz V
GS
= 0
660
180
70
pF
pF
pF
3/8
STB36NF06L STP36NF06L
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(*)
Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
(
)
Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Delay Time
Rise Time
V
DD
= 30 V
I
D
= 15 A
R
G
= 4.7
V
GS
= 5 V
(Resistive Load, Figure 3)
11
80
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 30 V I
D
= 30 A V
GS
= 10 V
13
4.5
8
17.5
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(off)
t
f
Turn-off Delay Time
Fall Time
V
DD
= 30 V
I
D
= 15 A
R
G
= 4.7
,
V
GS
= 5 V
(Resistive Load, Figure 3)
20
13
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(
)
Source-drain Current
Source-drain Current (pulsed)
30
120
A
A
V
SD
(*)
Forward On Voltage
I
SD
= 30 A V
GS
= 0
1.5
V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 30 A
di/dt = 100A/s
V
DD
= 20 V
T
j
= 150C
(see test circuit, Figure 5)
55
108
4
ns
nC
A
ELECTRICAL CHARACTERISTICS (continued)
STB36NF06L STP36NF06L
4/8
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For Resistive
Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
5/8
STB36NF06L STP36NF06L
DIM.
mm.
inch.
MIN.
TYP. MAX.
MIN.
TYP. TYP.
A
4.4
4.6
0.173
0.181
A1
2.49
2.69
0.098
0.106
A2
0.03
0.23
0.001
0.009
B
0.7
0.93
0.028
0.037
B2
1.14
1.7
0.045
0.067
C
0.45
0.6
0.018
0.024
C2
1.21
1.36
0.048
0.054
D
8.95
9.35
0.352
0.368
D1
8
0.315
E
10
10.4
0.394
0.409
E1
8.5
0.334
G
4.88
5.28
0.192
0.208
L
15
15.85
0.591
0.624
L2
1.27
1.4
0.050
0.055
L3
1.4
1.75
0.055
0.069
M
2.4
3.2
0.094
0.126
R
0.4
0.015
V2
0
8
0
8
D
2
PAK MECHANICAL DATA
STB36NF06L STP36NF06L
6/8
DIM.
mm.
inch.
MIN.
TYP. MAX.
MIN.
TYP. TYP.
A
4.4
4.6
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
0.107
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
G
4.95
5.15
0.194
0.203
G1
2.40
2.70
0.094
0.106
H2
10
10.40
0.393
0.409
L2
16.40
0.645
L3
28.90
1.137
L4
13
14
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.20
6.60
0.244
0.260
L9
3.50
3.93
0.137
0.154
DIA
3.75
3.85
0.147
0.151
TO-220 MECHANICAL DATA
7/8
STB36NF06L STP36NF06L
DIM.
mm
inch
MIN.
MAX.
MIN.
MAX.
A0
10.5
10.7
0.413
0.421
B0
15.7
15.9
0.618
0.626
D
1.5
1.6
0.059
0.063
D1
1.59
1.61
0.062
0.063
E
1.65
1.85
0.065
0.073
F
11.4
11.6
0.449
0.456
K0
4.8
5.0
0.189
0.197
P0
3.9
4.1
0.153
0.161
P1
11.9
12.1
0.468
0.476
P2
1.9
2.1
0075
0.082
R
50
1.574
T
0.25
0.35
.0.0098
0.0137
W
23.7
24.3
0.933
0.956
DIM.
mm
inch
MIN.
MAX.
MIN.
MAX.
A
330
12.992
B
1.5
0.059
C
12.8
13.2
0.504
0.520
D
20.2
0.795
G
24.4
26.4
0.960
1.039
N
100
3.937
T
30.4
1.197
BASE QTY
BULK QTY
1000
1000
REEL MECHANICAL DATA
* on sales type
TUBE SHIPMENT (no suffix)*
TAPE AND REEL SHIPMENT (suffix "T4")*
D
2
PAK FOOTPRINT
TAPE MECHANICAL DATA
STB36NF06L STP36NF06L
8/8
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is registered trademark of STMicroelectronics
2003 STMicroelectronics - All Rights Reserved
All other names are the property of their respective owners.
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