STB3NC60
N - CHANNEL 600V - 3.3
- 3A - D
2
PAK/I
2
PAK
PowerMESH
TM
MOSFET
TYPICAL R
DS(on)
= 3.3
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
VERY LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED
DESCRIPTION
The PowerMESH
TM
II
is the evolution of the first
generation of MESH OVERLAY
TM
. The layout
refinements introduced greatly improve the
Ron*area figure of merit while keeping the device
at the leading edge for what concerns switching
speed, gate charge and ruggedness.
APPLICATIONS
HIGH CURRENT, HIGH SPEED SWITCHING
SWITCH MODE POWER SUPPLIES (SMPS)
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
INTERNAL SCHEMATIC DIAGRAM
February 2000
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
GS
= 0)
600
V
V
DGR
Drain- gate Voltage (R
GS
= 20 k
)
600
V
V
GS
Gate-source Voltage
30
V
I
D
Drain Current (continuous) at T
c
= 25
o
C
3
A
I
D
Drain Current (continuous) at T
c
= 100
o
C
1.9
A
I
DM
(
)
Drain Current (pulsed)
12
A
P
tot
Total Dissipation at T
c
= 25
o
C
80
W
Derating Factor
0.64
W/
o
C
dv/dt(
1
)
Peak Diode Recovery voltage slope
4
V/ns
T
stg
Storage Temperature
-65 to 150
o
C
T
j
Max. Operating Junction Temperature
150
o
C
(
) Pulse width limited by safe operating area (
1
) I
SD
3A, di/dt
100 A/
s, V
DD
V
(BR)DSS
, Tj
T
JMAX
TYPE
V
DSS
R
DS(on)
I
D
STB3NC60
600 V
< 3.6
3 A
1
2
3
1
3
I
2
PAK
TO-262
(Suffix "-1")
D
2
PAK
TO-263
(Suffix "T4")
1/9
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case Max
1.56
o
C/W
R
th j-a mb
R
thc-sin k
T
l
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose
62.5
0.5
300
o
C/W
o
C/W
o
C
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
3
A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25
o
C, I
D
= I
AR
, V
DD
= 50 V)
100
mJ
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250
A V
GS
= 0
600
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating T
c
= 125
o
C
1
50
A
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
=
30 V
100
nA
ON (
)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th )
Gate Threshold Voltage V
DS
= V
GS
I
D
= 250
A
2
3
4
V
R
DS(on )
Static Drain-source On
Resistance
V
GS
= 10V I
D
= 1.5 A
3.3
3.6
I
D(on)
On State Drain Current
V
DS
> I
D(on )
x R
DS(on )max
V
GS
= 10 V
3
A
DYNAMIC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(
)
Forward
Transconductance
V
DS
> I
D(on )
x R
DS(on )max
I
D
= 1.5 A
2
S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
= 25 V f = 1 MHz V
GS
= 0
400
57
7
pF
pF
pF
STB3NC60
2/9
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Time
Rise Time
V
DD
= 300 V I
D
= 1.5 A
R
G
= 4.7
V
GS
= 10 V
(see test circuit, figure 3)
9
13
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 480 V I
D
= 3 A V
GS
= 10 V
13
2.3
4.4
18.2
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
r(Vof f)
t
f
t
c
Off-voltage Rise Time
Fall Time
Cross-over Time
V
DD
= 480 V I
D
= 3 A
R
G
= 4.7
V
GS
= 10 V
(see test circuit, figure 5)
13
15
21
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(
)
Source-drain Current
Source-drain Current
(pulsed)
3
12
A
A
V
SD
(
)
Forward On Voltage
I
SD
= 3 A V
GS
= 0
1.6
V
t
rr
Q
rr
I
RRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I
SD
= 3 A di/dt = 100 A/
s
V
DD
= 100 V T
j
= 150
o
C
(see test circuit, figure 5)
420
1.5
7.1
ns
C
A
(
) Pulsed: Pulse duration = 300
s, duty cycle 1.5 %
(
) Pulse width limited by safe operating area
Safe Operating Area for D
2
PAK/I
2
PAK
Thermal Impedancefor D
2
PAK/I
2
PAK
STB3NC60
3/9
Output Characteristics
Transconductance
Gate Charge vs Gate-source Voltage
Transfer Characteristics
Static Drain-source On Resistance
Capacitance Variations
STB3NC60
4/9
Normalized Gate Threshold Voltage vs
Temperature
Source-drain Diode Forward Characteristics
Normalized On Resistance vs Temperature
STB3NC60
5/9
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