1/12
December 2002
STP5NC50 - STP5NC50FP
STB5NC50 - STB5NC50-1
N-CHANNEL 500V - 1.3
- 5.5A TO-220/FP/D
2
PAK/I
2
PAK
PowerMeshTMII MOSFET
s
TYPICAL R
DS
(on) = 1.3
s
EXTREMELY HIGH dv/dt CAPABILITY
s
100% AVALANCHE TESTED
s
NEW HIGH VOLTAGE BENCHMARK
s
GATE CHARGE MINIMIZED
DESCRIPTION
The PowerMESH
TM
II is the evolution of the first
generation of MESH OVERLAY
TM.
The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SWITH MODE POWER SUPPLIES (SMPS)
s
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVES
ABSOLUTE MAXIMUM RATINGS
()Pulse width limited by safe operating area
(1)I
SD
5.5A, di/dt
100A/s, V
DD
V
(BR)DSS
, T
j
T
JMAX.
TYPE
V
DSS
R
DS(on)
I
D
STP5NC50
STP5NC50FP
STB5NC50
STB5NC50-1
500 V
500 V
500 V
500 V
< 1.5
< 1.5
< 1.5
< 1.5
5.5A
5.5A
5.5A
5.5A
Symbol
Parameter
Value
Unit
STP5NC50
STB5NC50/-1
STP5NC50FP
V
DS
Drain-source Voltage (V
GS
= 0)
500
V
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
500
V
V
GS
Gate- source Voltage
30
V
I
D
Drain Current (continuos) at T
C
= 25C
5.5
5.5(*)
A
I
D
Drain Current (continuos) at T
C
= 100C
3.5
3.5(*)
A
I
DM
( )
Drain Current (pulsed)
22
22
A
P
TOT
Total Dissipation at T
C
= 25C
100
35
W
Derating Factor
0.8
0.28
W/C
dv/dt(1)
Peak Diode Recovery voltage slope
3.5
V/ns
V
ISO
Insulation Withstand Voltage (DC)
-
2500
V
T
j
T
stg
Operating Junction Temperature
Storage Temperature
-55 to 175
-65 to 175
C
C
(*)Limited only by maximum temperature allowed
INTERNAL SCHEMATIC DIAGRAM
TO-220
TO-220FP
1
3
D
2
PAK
1
2
3
I
2
PAK
STP5NC50 - STP5NC50FP - STB5NC50 - STB5NC50-1
2/12
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE = 25 C UNLESS OTHERWISE SPECIFIED)
OFF
ON
(1)
DYNAMIC
TO-220
D
2
PAK
I
2
PAK
TO-220FP
Rthj-case
Thermal Resistance Junction-case Max
1.25
3.57
C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
62.5
C/W
T
l
Maximum Lead Temperature For Soldering Purpose
300
C
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
5.5
A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 C, I
D
= I
AR
, V
DD
= 50 V)
280
mJ
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250A, V
GS
= 0
500
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
1
A
V
DS
= Max Rating, T
C
= 125 C
50
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= 30V
100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250A
2
3
4
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10V, I
D
= 2 A
1.3
1.5
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(1)
Forward Transconductance
V
DS
> I
D(on)
x R
DS(on)max,
I
D
= 2.5A
4
S
C
iss
Input Capacitance
V
DS
= 25V, f = 1 MHz, V
GS
= 0
480
pF
C
oss
Output Capacitance
80
pF
C
rss
Reverse Transfer
Capacitance
11.5
pF
3/12
STP5NC50 - STP5NC50FP - STB5NC50 - STB5NC50-1
Safe Operating Area for TO-220FP
Safe Operating Area for TO-220/D2PAK/I2PAK
ELECTRICAL CHARACTERISTICS
(CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
Turn-on Delay Time
Rise Time
V
DD
= 250V, I
D
= 2.5A
R
G
= 4.7
V
GS
= 10V
(see test circuit, Figure 3)
14
ns
t
r
15
ns
Q
g
Total Gate Charge
V
DD
= 400V, I
D
= 5.5A,
V
GS
= 10V
17.5
24.5
nC
Q
gs
Gate-Source Charge
3
nC
Q
gd
Gate-Drain Charge
9
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
r(Voff)
Off-voltage Rise Time
V
DD
= 400V, I
D
= 5.5A,
R
G
= 4.7
,
V
GS
= 10V
(see test circuit, Figure 5)
12
ns
t
f
Fall Time
14
ns
t
c
Cross-over Time
20
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
Source-drain Current
5.5
A
I
SDM
(2)
Source-drain Current (pulsed)
22
A
V
SD
(1)
Forward On Voltage
I
SD
= 5.5A, V
GS
= 0
1.6
V
t
rr
Reverse Recovery Time
I
SD
= 5.5A, di/dt = 100A/s,
V
DD
= 100V, T
j
= 150C
(see test circuit, Figure 5)
360
ns
Q
rr
Reverse Recovery Charge
1.6
C
I
RRM
Reverse Recovery Current
9
A
STP5NC50 - STP5NC50FP - STB5NC50 - STB5NC50-1
4/12
Thermal Impedence for TO-220/D2PAK/I2PAK
Output Characteristics
Thermal Impedence for TO-220FP
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
5/12
STP5NC50 - STP5NC50FP - STB5NC50 - STB5NC50-1
Source-drain Diode Forward Characteristics
Normalized On Resistance vs Temperature
Normalized Gate Threshold Voltage vs Temp.
Gate Charge vs Gate-source Voltage
Capacitance Variations
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