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May 2005
STB60NF10
STP60NF10
N-CHANNEL 100V - 0.019
- 80A DPAK/TO-220
STripFETTM II POWER MOSFET
Rev.
2.0
Figure 1:Package
Table 1: General Features
TYPICAL R
DS
(on) = 0.019
EXTREMELY HIGHL dv/dt CAPABILITY
100% AVALANCHE TESTED
SURFACE-MOUNTING DPAK (TO-263)
POWER PACKAGE IN TAPE & REEL
(SUFFIX "T4")
DESCRIPTION
This MOSFET series realized with STMicroelec-
tronics unique STripFETTM process has specifical-
ly been designed to minimize input capacitance
and gate charge. It is therefore suitable as primary
switch in advanced high-efficiency, high-frequency
isolated DC-DC converters for Telecom and Com-
puter applications. It is also intended for any appli-
cations with low gate drive requirements.
APPLICATIONS
HIGH EFFICIENCY DC/DC CONVERTERS,
INDUSTRIAL, AND LIGHTING EQUIPMENT.
MOTOR CONTROL
TYPE
V
DSS
R
DS(on)
I
D
STB60NF10
STP60NF10
100 V
100 V
< 0.023
< 0.023
80 A
80 A
1
2
3
TO-220
1
3
D
2
PAK
TO-263
(Suffix "T4")
Figure 2: Internal Schematic Diagram
Table 2: Ordering Information
Table 3:ABSOLUTE MAXIMUM RATINGS
(
)
Pulse width limited by safe operating area.
(**) Current Limited by Package
(1) I
SD
80A, di/dt
300A/s, V
DD
V
(BR)DSS
, T
j
T
JMAX
(2) Starting T
j
= 25
o
C, I
D
= 40A, V
DD
= 30V
SALES TYPE
MARKING
PACKAGE
PACKAGING
STB60NF10T4
STP60NF10
B60NF10
P60NF10
TO-263
TO-220
TAPE & REEL
TUBE
Symbol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
GS
= 0)
100
V
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
100
V
V
GS
Gate- source Voltage
20
V
I
D
(*)
Drain Current (continuous) at T
C
= 25C
80
A
I
D
Drain Current (continuous) at T
C
= 100C
66
A
I
DM
(
)
Drain Current (pulsed)
320
A
P
tot
Total Dissipation at T
C
= 25C
300
W
Derating Factor
2
W/C
dv/dt
(1)
Peak Diode Recovery voltage slope
16
V/ns
E
AS (2)
Single Pulse Avalanche Energy
485
mJ
T
stg
Storage Temperature
-55 to 175
C
STB60NF10 STP60NF10
2/10
Table 4: THERMAL DATA
ELECTRICAL CHARACTERISTICS (T
case
= 25 C unless otherwise specified)
Table 5: OFF
Table 6: ON
(*)
Table 7: DYNAMIC
Rthj-case
Rthj-amb
T
l
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose
Max
Max
0.5
62.5
300
C/W
C/W
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250 A, V
GS
= 0
100
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating T
C
= 125C
1
10
A
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= 20 V
100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
I
D
= 250 A
2
3
4
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10 V
I
D
= 40 A
0.019
0.023
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs (*)
Forward Transconductance
V
DS =
25 V
I
D
= 40 A
78
S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
= 25V f = 1 MHz V
GS
= 0
4270
470
140
pF
pF
pF
3/10
STB60NF10 STP60NF10
Table 8: SWITCHING ON
Table 9: SWITCHING OFF
Table 10: SOURCE DRAIN DIODE
(*)
Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
(
)
Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Delay Time
Rise Time
V
DD
= 50 V
I
D
= 40 A
R
G
= 4.7
V
GS
= 10 V
(Resistive Load, Figure )
17
56
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 50V I
D
= 80A V
GS
= 10V
104
20
32
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(off)
t
f
Turn-off Delay Time
Fall Time
V
DD
= 50 V
I
D
= 40 A
R
G
= 4.7
,
V
GS
= 10 V
(Resistive Load, Figure 3)
82
23
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(
)
Source-drain Current
Source-drain Current (pulsed)
80
320
A
A
V
SD
(*)
Forward On Voltage
I
SD
= 80 A V
GS
= 0
1.3
V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 80 A
di/dt = 100A/s
V
DD
= 50 V
T
j
= 150C
(see test circuit, Figure 5)
92
340
7.4
ns
C
A
ELECTRICAL CHARACTERISTICS (continued)
Figure 4: Thermal Impedance
Figure 3: Safe Operating Area
STB60NF10 STP60NF10
4/10
Figure 5: Output Characteristics
Figure 6: Transfer Characteristics
Figure 7: Transconductance
Figure 8: Static Drain-source On Resistance
Figure 9: Gate Charge vs Gate-source Voltage
Figure 10: Capacitance Variations
5/10
STB60NF10 STP60NF10
.
.
Figure 11: Normalized Gate Threshold Voltage vs
Temperature
Figure 12: Normalized on Resistance vs Temperature
Figure 13: Source-drain Diode Forward Characteristics
Figure 14: Normalized Breakdown Voltage vs
Temperature.
.
.
STB60NF10 STP60NF10
6/10
Figure 15:
Unclamped Inductive Load Test Circuit
Figure 17:
Switching Times Test Circuits For Resis-
tive Load
Figure 16:
Unclamped Inductive Waveform
Figure 18:
Gate Charge test Circuit
Figure 19:
Test Circuit For Inductive Load Switch-
ing And Diode Recovery Times
7/10
STB60NF10 STP60NF10
DIM.
mm.
inch.
MIN.
TYP. MAX.
MIN.
TYP. TYP.
A
4.4
4.6
0.173
0.181
A1
2.49
2.69
0.098
0.106
A2
0.03
0.23
0.001
0.009
B
0.7
0.93
0.028
0.037
B2
1.14
1.7
0.045
0.067
C
0.45
0.6
0.018
0.024
C2
1.21
1.36
0.048
0.054
D
8.95
9.35
0.352
0.368
D1
8
0.315
E
10
10.4
0.394
0.409
E1
8.5
0.334
G
4.88
5.28
0.192
0.208
L
15
15.85
0.591
0.624
L2
1.27
1.4
0.050
0.055
L3
1.4
1.75
0.055
0.069
M
2.4
3.2
0.094
0.126
R
0.4
0.015
V2
0
8
0
8
D
2
PAK MECHANICAL DATA
STB60NF10 STP60NF10
8/10
DIM.
mm.
inch.
MIN.
TYP. MAX.
MIN.
TYP. TYP.
A
4.4
4.6
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
0.107
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
G
4.95
5.15
0.194
0.203
G1
2.40
2.70
0.094
0.106
H2
10
10.40
0.393
0.409
L2
16.40
0.645
L3
28.90
1.137
L4
13
14
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.20
6.60
0.244
0.260
L9
3.50
3.93
0.137
0.154
DIA
3.75
3.85
0.147
0.151
TO-220 MECHANICAL DATA
9/10
STB60NF10 STP60NF10
Table 11:Revision History
Date
Revision
Description of Changes
May 2005
1.0
FIRST ISSUE
May 2005
2.0
ADDED PACKAGE DPAK
STB60NF10 STP60NF10
10/10
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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