1/11
October 2004
NEW DATASHEET ACCORDING TO PCN DSG-TRA/04/532
STD17NF03L
STD17NF03L-1
N-CHANNEL 30V - 0.038
- 17A - DPAK/IPAK
STripFETTMII MOSFET
Table 1: General Features
s
TYPICAL R
DS
(on) = 0.038
s
EXCEPTIONAL dv/dt CAPABILITY
s
LOW GATE CHARGE AT 100C
s
APPLICATION ORIENTED
CHARACTERIZATION
s
100% AVALANCHE TESTED
DESCRIPTION
This MOSFET is the latest development of STMi-
croelectronics unique "Single Feature Size
TM"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalance characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
s
DC-DC & DC-AC CONVERTERS
s
MOTOR CONTROL, AUDIO AMPLIFIERS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SOLENOID AND RELAY DRIVERS
s
AUTOMOTIVE ENVIRONMENT
Table 2: Order Codes
Figure 1: Package
Figure 2: Internal Schematic Diagram
TYPE
V
DSS
R
DS(on)
I
D
STD17NF03L
STD17NF03L-1
30 V
30 V
< 0.05
< 0.05
17 A
17 A
1
3
3
2
1
DPAK
IPAK
SALES TYPE
MARKING
PACKAGE
PACKAGING
STD17NF03LT4
D17NF03L@
DPAK
TAPE & REEL
STD17NF03L-1
D17NF03L@
IPAK
TUBE
Rev. 3
STD17NF03L - STD17NF03L-1
2/11
Table 3: Absolute Maximum ratings
(1) I
SD
17A, di/dt
300A/s, V
DD
V
(BR)DSS
, T
j
T
JMAX.
.
(2) Starting T
j
=25C, I
D
=8.5A, V
DD
=15V
( ) Pulse width limited by safe operating area
Table 4: Thermal Data
ELECTRICAL CHARACTERISTICS (T
CASE
=25C UNLESS OTHERWISE SPECIFIED)
Table 5: Off
Table 6: On
Symbol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
GS
= 0)
30
V
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
30
V
V
GS
Gate- source Voltage
16
V
I
D
Drain Current (continuous) at T
C
= 25C
17
A
I
D
Drain Current (continuous) at T
C
= 100C
12
A
I
DM
( )
Drain Current (pulsed)
68
A
P
TOT
Total Dissipation at T
C
= 25C
30
W
Derating Factor
0.2
W/C
dv/dt (1)
Peak Diode Recovery voltage slope
7
V/ns
E
AS
(2)
Single Pulse Avalanche Energy
200
mJ
T
stg
Storage Temperature
55 to 175
C
T
j
Operating Junction Temperature
175
C
Rthj-case
Thermal Resistance Junction-case Max
5.0
C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
100
C/W
T
l
Maximum Lead Temperature For Soldering Purpose
275
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250 A, V
GS
= 0
30
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
1
A
V
DS
= Max Rating, T
C
= 125C
10
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= 16V
100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold Voltage V
DS
= V
GS
, I
D
= 250A
1
1.5
2.2
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10V, I
D
= 8.5 A
V
GS
= 5 V, I
D
= 8.5 A
0.038
0.045
0.05
0.06
3/11
STD17NF03L - STD17NF03L-1
ELECTRICAL CHARACTERISTICS (CONTINUED)
Table 7: Dynamic
Table 8: Switching On
Table 9: Switching Off
Table 10: Source Drain Diode
(1) Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
(2) Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(1)
Forward Transconductance
V
DS
> I
D(on)
x R
DS(on)max,
I
D
=8.5A
12
S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
= 25V, f = 1 MHz, V
GS
= 0
320
155
28
pF
pF
pF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Delay Time
Rise Time
V
DD
= 15V, I
D
= 8.5A
R
G
= 4.7
V
GS
= 5V
(see Figure 16)
11
100
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 24V, I
D
= 17A,
V
GS
= 5V
4.8
2.25
1.7
6.5
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(off)
t
f
Turn-off-Delay Time
Fall Time
V
DD
= 15V, I
D
= 8.5A,
R
G
=4.7
,
V
GS
= 5V
(see Figure 16)
25
22
ns
ns
t
r(off)
t
f
t
c
Off-voltage Rise Time
Fall Time
Cross-over Time
Vclamp =24V, I
D
=17A
R
G
=4.7
,
V
GS
= 5V
(see Figure 17)
22
55
75
ns
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
Source-drain Current
22
A
I
SDM
(2)
Source-drain Current (pulsed)
88
A
V
SD
(1)
Forward On Voltage
I
SD
= 17A, V
GS
= 0
1.5
V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 17A, di/dt = 100A/s,
V
DD
= 15V, T
j
= 150C
(see test circuit, Figure 5)
28
18
1.3
ns
nC
A
STD17NF03L - STD17NF03L-1
4/11
Figure 3: Safe Operating Area
Figure 4: Output Characteristics
Figure 5: Transconductance
Figure 6: Thermal Impedance
Figure 7: Transfer Characteristics
Figure 8: Static Drain-source On Resistance
5/11
STD17NF03L - STD17NF03L-1
Figure 9: Gate Charge vs Gate-source Voltage
Figure 10: Normalized Gate Thereshold Volt-
age vs Temperature
Figure 11: Source-Drain Diode Forward Char-
acteristics
Figure 12: Capacitance Variations
Figure 13: Normalized On Resistance vs Tem-
perature
Figure 14: Normalized Breakdown Voltage vs
Temperature
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