1/9
September 2002
.
STD19NE06L
N-CHANNEL 60V - 0.038
- 19A IPAK/DPAK
STripFETTM POWER MOSFET
s
TYPICAL R
DS
(on) = 0.038
s
100% AVALANCHE TESTED
s
LOW GATE CHARGE
s
THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX "-1")
s
SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX "T4")
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature SizeTM" strip-
based process. The resulting transistor shows extremely
high packing density for low on-resistance, rugged
avalanche characteristics and less critical alignment
steps therefore a remarkable manufacturing
reproducibility.
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SOLENOID AND RALAY DRIVERS
s
MOTOR CONTROL, AUDIO AMPLIFIERS
s
DC-DC & DC-AC CONVERTERS
TYPE
V
DSS
R
DS(on)
I
D
STD19NE06L
60 V
<0.05
19 A
3
2
1
1
3
IPAK
TO-251
(Suffix "-1")
DPAK
TO-252
(Suffix "T4")
ABSOLUTE MAXIMUM RATINGS
(
)
Pulse width limited by safe operating area
(1) Starting T
j
= 25
o
C, I
D
= 9.5 A, V
DD
= 35 V
Symbol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
GS
= 0)
60
V
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
60
V
V
GS
Gate- source Voltage
20
V
I
D
Drain Current (continuous) at T
C
= 25C
19
A
I
D
Drain Current (continuous) at T
C
= 100C
13
A
I
DM
(
)
Drain Current (pulsed)
76
A
P
tot
Total Dissipation at T
C
= 25C
70
W
Derating Factor
0.3
W/C
E
AS (1)
Single Pulse Avalanche Energy
450
mJ
T
stg
Storage Temperature
-55 to 175
C
T
j
Max. Operating Junction Temperature
INTERNAL SCHEMATIC DIAGRAM
STD19NE06L
2/9
THERMAL DATA
ELECTRICAL CHARACTERISTICS (T
case
= 25 C unless otherwise specified)
OFF
ON
(*)
DYNAMIC
Rthj-case
Rthj-amb
Rthc-sink
T
l
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Thermal Resistance Case-sink
Maximum Lead Temperature For Soldering Purpose
Max
Max
Typ
2.14
100
1.5
300
C/W
C/W
C/W
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250 A, V
GS
= 0
60
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating T
C
= 125C
1
10
A
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= 20 V
100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
I
D
= 250 A
1
1.7
2.5
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 5 V
I
D
= 9.5 A
V
GS
= 10 V
I
D
= 9.5 A
0.048
0.038
0.06
0.05
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs (*)
Forward Transconductance
V
DS
> I
D(on)
x R
DS(on)max,
I
D
= 9.5 A
7
14
S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
= 25V, f = 1 MHz, V
GS
= 0
1350
195
58
pF
pF
pF
3/9
STD19NE06L
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(*)
Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
(
)
Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Delay Time
Rise Time
V
DD
= 30 V
I
D
= 15 A
R
G
= 4.7
V
GS
= 4.5 V
(Resistive Load, Figure 3)
25
105
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 48 V I
D
= 30 A V
GS
= 5V
20
8
10
28
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(off)
t
f
Turn-off Delay Time
Fall Time
V
DD
= 30 V
I
D
= 15 A
R
G
= 4.7
,
V
GS
= 4.5 V
(Resistive Load, Figure 3)
50
20
ns
ns
t
r(Voff)
t
f
t
c
Off-voltage Rise Time
Fall Time
Cross-over Time
V
clamp
= 48 V
I
D
= 12 A
R
G
= 4.7
,
V
GS
= 5V
(Inductive Load, Figure 5)
15
40
60
ns
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(
)
Source-drain Current
Source-drain Current (pulsed)
19
76
A
A
V
SD
(*)
Forward On Voltage
I
SD
= 30 A
V
GS
= 0
1.5
V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 30 A
di/dt = 100A/s
V
DD
= 30 V
T
j
= 150C
(see test circuit, Figure 5)
80
0.18
4.5
ns
C
A
ELECTRICAL CHARACTERISTICS (continued)
Safe Operating Area
Thermal Impedance
STD19NE06L
4/9
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
5/9
STD19NE06L
Normalized Gate Threshold Voltage vs Temperature
Normalized on Resistance vs Temperature
Source-drain Diode Forward Characteristics
.
.
.
PDF 
ZIP