1/13
February 2002
STP2NC70Z, STP2NC70ZFP
STD1NC70Z, STD1NC70Z-1
N-CHANNEL 700V - 7.3
- 1.4A TO-220/FP/DPAK/IPAK
Zener-Protected PowerMESHTMIII MOSFET
s
TYPICAL R
DS
(on) = 7.3
s
EXTREMELY HIGH dv/dt CAPABILITY
s
100% AVALANCHE TESTED
s
GATE CHARGE MINIMIZED
s
VERY LOW INTRINSIC CAPACITANCES
DESCRIPTION
The third generation of MESH OVERLAYTM Power
MOSFETs for very high voltage exhibits unsur-
passed on-resistance per unit area while integrating
back-to-back Zener diodes between gate and
source. Such arrangement gives extra ESD capabil-
ity with higher ruggedness performance as request-
ed by a large variety of single-switch applications..
APPLICATIONS
s
SINGLE-ENDED SMPS IN MONITORS,
COMPUTER AND INDUSTRIAL APPLICATION
s
WELDING EQUIPMENT
ORDERING INFORMATION
TYPE
V
DSS
R
DS(on)
I
D
Pw
STP2NC70Z
STP2NC70ZFP
STD1NC70Z
STD1NC70Z-1
700 V
700 V
700 V
700 V
< 8.5
< 8.5
< 8.5
< 8.5
1.4 A
1.4 A
1.4 A
1.4 A
50 W
25 W
45 W
45 W
SALES TYPE
MARKING
PACKAGE
PACKAGING
STP2NC70Z
P2NC70Z
TO-220
TUBE
STP2NC70ZFP
P2NC70ZFP
TO-220FP
TUBE
STD1NC70ZT4
D1NC70Z
DPAK
TAPE & REEL
STD1NC70Z-1
D1NC70Z
IPAK
TUBE
TO-220
TO-220FP
IPAK
1
2
3
DPAK
3
2
1
1
3
STP2NC70Z, STP2NC70ZFP, STD1NC70Z, STD1NC70Z-1
2/13
ABSOLUTE MAXIMUM RATINGS
(
l
) Pulse width limited by safe operating area
(1) I
SD
10A, di/dt
200A/s, V
DD
V
(BR)DSS
, T
j
T
JMAX.
(*) Limited only by maximum temperature allowed
THERMAL DATA
AVALANCHE CHARACTERISTICS
GATE-SOURCE ZENER DIODE
Note: 3.
V
BV
=
T (25-T) BV
GSO
(25)
(#) When mounted on minimum Footprint
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device's
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to souce. In this respect the Zener voltage is appropriate to achieve an efficient and cost-
effective intervention to protect the device's integrity. These integrated Zener diodes thus avoid the usage
of external components.
Symbol
Parameter
Value
Unit
STP2NC70Z
STP2NC70ZFP
STD1NC70Z
STD1NC70Z-1
V
DS
Drain-source Voltage (V
GS
= 0)
700
V
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
700
V
V
GS
Gate- source Voltage
25
V
I
D
Drain Current (continuos) at T
C
= 25C
1.4
1.4 (*)
1.4
A
I
D
Drain Current (continuos) at T
C
= 100C
0.9
0.9 (*)
0.9
A
I
DM
(
l
)
Drain Current (pulsed)
5.6
5.6 (*)
5.6
A
P
TOT
Total Dissipation at T
C
= 25C
50
25
45
W
Derating Factor
0.4
0.2
0.36
W/C
I
GS
Gate-source Current (DC)
50
mA
V
ESD(G-S)
Gate source ESD(HBM-C=100pF, R=1.5K
)
2000
V
dv/dt (1)
Peak Diode Recovery voltage slope
3
V/ns
V
ISO
Insulation Withstand Voltage (DC)
-
2500
-
V
T
j
T
stg
Operating Junction Temperature
Storage Temperature
-65 to 150
-65 to 150
C
C
TO-220
TO-220FP
DPAK
IPAK
Rthj-case
Thermal Resistance Junction-case Max
2.5
5
2.75
C/W
Rthj-pcb
Thermal Resistance Junction-pcb Max (for SMD) (#)
100
C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
62.5
100
C/W
T
l
Maximum Lead Temperature For Soldering Purpose
300
275
C
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
1.4
A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 C, I
D
= I
AR
, V
DD
= 50 V)
60
mJ
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
BV
GSO
Gate-Source Breakdown
Voltage
Igs= 1mA (Open Drain)
25
V
T
Voltage Thermal Coefficient
T=25C Note(3)
1.3
10
-4
/C
3/13
STP2NC70Z, STP2NC70ZFP, STD1NC70Z, STD1NC70Z-1
ELECTRICAL CHARACTERISTICS (TCASE =25C UNLESS OTHERWISE SPECIFIED)
ON/OFF
DYNAMIC
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0 to 80%
V
DSS
.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250 A, V
GS
= 0
700
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating, T
C
= 125 C
1
50
A
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= 20V
10
A
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250A
3
4
5
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10V, I
D
= 0.7 A
7.3
8.5
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(1)
Forward Transconductance
V
DS
= 15 V
,
I
D
= 0.7 A
1.2
S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
= 25V, f = 1 MHz, V
GS
= 0
305
34
3.6
pF
pF
pF
C
oss eq.
(3)
Equivalent Output
Capacitance
V
GS
= 0V, V
DS
= 0V to 560V
28
pF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Delay Time
Rise Time
V
DD
= 350 V, I
D
= 0.8 A
R
G
= 4.7
V
GS
= 10 V
(Resistive Load see, Figure 3)
11
8
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 560V, I
D
= 1.6 A,
V
GS
= 10V
8
2
3.8
12
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(off)
t
f
Turn-off Delay Time
Fall Time
V
DD
= 350 V, I
D
= 0.8 A
R
G
= 4.7
V
GS
= 10 V
(Resistive Load see, Figure 3)
27
30
ns
ns
t
r(Voff)
t
f
t
c
Off-voltage Rise Time
Fall Time
Cross-over Time
V
DD
= 560V, I
D
= 1.6 A,
R
G
= 4.7
,
V
GS
= 10V
(Inductive Load see, Figure 5)
20
5
25
ns
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(2)
Source-drain Current
Source-drain Current (pulsed)
1.4
5.6
A
A
V
SD
(1)
Forward On Voltage
I
SD
= 1.4 A, V
GS
= 0
1.6
V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 1.6 A, di/dt = 100A/s
V
DD
= 30V, T
j
= 150C
(see test circuit, Figure 5)
370
1.3
6.8
ns
C
A
STP2NC70Z, STP2NC70ZFP, STD1NC70Z, STD1NC70Z-1
4/13
Safe Operating Area For TO-220FP
Safe Operating Area For TO-220
Thermal Impedance For TO-220
Thermal Impedance For TO-220FP
Safe Operating Area For DPAK/IPAK
Thermal Impedance For DPAK/IPAK
5/13
STP2NC70Z, STP2NC70ZFP, STD1NC70Z, STD1NC70Z-1
Gate Charge vs Gate-source Voltage
Capacitance Variations
Output Characteristics
Static Drain-source On Resistance
Transfer Characteristics
Transconductance
STP2NC70Z, STP2NC70ZFP, STD1NC70Z, STD1NC70Z-1
6/13
Normalized BVDSS vs Temperature
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
Normalized Gate Threshold Voltage vs Temp.
7/13
STP2NC70Z, STP2NC70ZFP, STD1NC70Z, STD1NC70Z-1
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
Fig. 4: Gate Charge test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuit For
Resistive Load
STP2NC70Z, STP2NC70ZFP, STD1NC70Z, STD1NC70Z-1
8/13
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
0.107
D1
1.27
0.050
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
G
4.95
5.15
0.194
0.203
G1
2.4
2.7
0.094
0.106
H2
10.0
10.40
0.393
0.409
L2
16.4
0.645
L4
13.0
14.0
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.2
6.6
0.244
0.260
L9
3.5
3.93
0.137
0.154
DIA.
3.75
3.85
0.147
0.151
L6
A
C
D
E
D1
F
G
L7
L2
Dia.
F1
L5
L4
H2
L9
F2
G1
TO-220 MECHANICAL DATA
P011C
9/13
STP2NC70Z, STP2NC70ZFP, STD1NC70Z, STD1NC70Z-1
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.4
4.6
0.173
0.181
B
2.5
2.7
0.098
0.106
D
2.5
2.75
0.098
0.108
E
0.45
0.7
0.017
0.027
F
0.75
1
0.030
0.039
F1
1.15
1.7
0.045
0.067
F2
1.15
1.7
0.045
0.067
G
4.95
5.2
0.195
0.204
G1
2.4
2.7
0.094
0.106
H
10
10.4
0.393
0.409
L2
16
0.630
L3
28.6
30.6
1.126
1.204
L4
9.8
10.6
0.385
0.417
L6
15.9
16.4
0.626
0.645
L7
9
9.3
0.354
0.366
3
3.2
0.118
0.126
L2
A
B
D
E
H
G
L6
F
L3
G1
1 2 3
F2
F1
L7
L4
TO-220FP MECHANICAL DATA
STP2NC70Z, STP2NC70ZFP, STD1NC70Z, STD1NC70Z-1
10/13
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
2.2
2.4
0.086
0.094
A1
0.9
1.1
0.035
0.043
A3
0.7
1.3 0.027
0.051
B
0.64
0.9
0.025
0.031
B2
5.2
5.4
0.204
0.212
B3
0.85
0.033
B5
0.3
0.012
B6
0.95
0.037
C
0.45
0.6
0.017
0.023
C2
0.48
0.6
0.019
0.023
D
6
6.2
0.236
0.244
E
6.4
6.6
0.252
0.260
G
4.4
4.6
0.173
0.181
H
15.9
16.3
0.626
0.641
L
9
9.4
0.354
0.370
L1
0.8
1.2
0.031
0.047
L2
0.8
1
0.031
0.039
A
C2
C
A3
H
A1
D
L
L2
L1
1 3
= =
B3
B
B6
B2
E
G
= =
= =
B5
2
TO-251 (IPAK) MECHANICAL DATA
0068771-E
11/13
STP2NC70Z, STP2NC70ZFP, STD1NC70Z, STD1NC70Z-1
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
2.20
2.40
0.087
0.094
A1
0.90
1.10
0.035
0.043
A2
0.03
0.23
0.001
0.009
B
0.64
0.90
0.025
0.035
B2
5.20
5.40
0.204
0.213
C
0.45
0.60
0.018
0.024
C2
0.48
0.60
0.019
0.024
D
6.00
6.20
0.236
0.244
E
6.40
6.60
0.252
0.260
G
4.40
4.60
0.173
0.181
H
9.35
10.10
0.368
0.398
L2
0.8
0.031
L4
0.60
1.00
0.024
0.039
V2
0
o
8
o
0
o
0
o
P032P_B
TO-252 (DPAK) MECHANICAL DATA
STP2NC70Z, STP2NC70ZFP, STD1NC70Z, STD1NC70Z-1
12/13
TAPE AND REEL SHIPMENT (suffix "T4")*
TUBE SHIPMENT (no suffix)*
DPAK FOOTPRINT
* on sales type
DIM.
mm
inch
MIN.
MAX.
MIN.
MAX.
A
330
12.992
B
1.5
0.059
C
12.8
13.2
0.504
0.520
D
20.2
0.795
G
16.4
18.4
0.645
0.724
N
50
1.968
T
22.4
0.881
BASE QTY
BULK QTY
2500
2500
REEL MECHANICAL DATA
DIM.
mm
inch
MIN.
MAX.
MIN.
MAX.
A0
6.8
7
0.267
0.275
B0
10.4
10.6
0.409
0.417
B1
12.1
0.476
D
1.5
1.6
0.059
0.063
D1
1.5
0.059
E
1.65
1.85
0.065
0.073
F
7.4
7.6
0.291
0.299
K0
2.55
2.75
0.100
0.108
P0
3.9
4.1
0.153
0.161
P1
7.9
8.1
0.311
0.319
P2
1.9
2.1
0.075
0.082
R
40
1.574
W
15.7
16.3
0.618
0.641
TAPE MECHANICAL DATA
All dimensions
are in millimeters
All dimensions are in millimeters
13/13
STP2NC70Z, STP2NC70ZFP, STD1NC70Z, STD1NC70Z-1
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
2000 STMicroelectronics Printed in Italy All Rights Reserved
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