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May 2001
STD2NC50
STD2NC50-1
N-CHANNEL 500V - 3
- 2.2A DPAK/IPAK
PowerMeshTMII MOSFET
s
TYPICAL R
DS
(on) = 3
s
EXTREMELY HIGH dv/dt CAPABILITY
s
100% AVALANCHE TESTED
s
NEW HIGH VOLTAGE BENCHMARK
s
GATE CHARGE MINIMIZED
DESCRIPTION
The PowerMESH
TM
II is
the evolution of the first
generation of MESH OVERLAY
TM.
The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SWITH MODE POWER SUPPLIES (SMPS)
s
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVER
ABSOLUTE MAXIMUM RATINGS
()Pulse width limited by safe operating area
TYPE
V
DSS
R
DS(on)
I
D
STD2NC50
STD2NC50-1
500 V
500 V
< 4
< 4
2.2 A
2.2 A
Symbol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
GS
= 0)
500
V
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
500
V
V
GS
Gate- source Voltage
30
V
I
D
Drain Current (continuos) at T
C
= 25C
2.2
A
I
D
Drain Current (continuos) at T
C
= 100C
1.4
A
I
DM
(1)
Drain Current (pulsed)
8.8
A
P
TOT
Total Dissipation at T
C
= 25C
45
W
Derating Factor
0.36
W/C
dv/dt
Peak Diode Recovery voltage slope
3
V/ns
T
stg
Storage Temperature
60 to 150
C
T
j
Max. Operating Junction Temperature
150
C
(1)I
SD
2.2A, di/dt
100A/s, V
DD
V
(BR)DSS
, T
j
T
JMAX
DPAK
1
3
3
2
1
IPAK
INTERNAL SCHEMATIC DIAGRAM
STD2NC50 / STD2NC50-1
2/10
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE = 25 C UNLESS OTHERWISE SPECIFIED)
OFF
ON
(1)
DYNAMIC
Rthj-case
Thermal Resistance Junction-case Max
2.78
C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
62.5
C/W
T
l
Maximum Lead Temperature For Soldering Purpose
300
C
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
2.2
A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 C, I
D
= I
AR
, V
DD
= 50 V)
140
mJ
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250 A, V
GS
= 0
500
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
1
A
V
DS
= Max Rating, T
C
= 125 C
50
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= 30V
100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250A
2
3
4
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10V, I
D
= 1.4 A
3
4
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(1)
Forward Transconductance
V
DS
> I
D(on)
x R
DS(on)max,
I
D
= 1.4A
2
S
C
iss
Input Capacitance
V
DS
= 25V, f = 1 MHz, V
GS
= 0
260
pF
C
oss
Output Capacitance
45
pF
C
rss
Reverse Transfer
Capacitance
5
pF
3/10
STD2NC50 / STD2NC50-1
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Delay Time
Rise Time
V
DD
= 250V, I
D
= 1.4 A
R
G
= 4.7
V
GS
= 10V
(see test circuit, Figure 3)
10
10
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 400V, I
D
= 2.8 A,
V
GS
= 10V
10
2.5
4.5
13.5
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
r(Voff)
t
f
t
c
Off-voltage Rise Time
Fall Time
Cross-over Time
V
DD
= 400V, I
D
= 2.8 A,
R
G
= 4.7
,
V
GS
= 10V
(see test circuit, Figure 5)
10
8
20
ns
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
Source-drain Current
2.2
A
I
SDM
(2)
Source-drain Current (pulsed)
8.8
A
V
SD
(1)
Forward On Voltage
I
SD
= 2.2 A, V
GS
= 0
1.6
V
t
rr
Reverse Recovery Time
I
SD
= 2.8A, di/dt = 100A/s,
V
DD
= 100V, Tj = 150C
(see test circuit, Figure 5)
380
ns
Q
rr
Reverse Recovery Charge
2200
nC
I
RRM
Reverse Recovery Current
11.5
A
Safe Operating Area
Thermal Impedence
STD2NC50 / STD2NC50-1
4/10
Gate Charge vs Gate-source Voltage
Static Drain-source On Resistance
Transconductance
Transfer Characteristics
Output Characteristics
Capacitance Variations
5/10
STD2NC50 / STD2NC50-1
Normalized Gate Threshold Voltage vs
Temperature
Source-drain Diode Forward Characteristics
Normalized On Resistance vs Temperature
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