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July 2002
STD30NF06L
N-CHANNEL 60V - 0.022
- 35A DPAK/IPAK
STripFETTM POWER MOSFET
(1) I
SD
38A, di/dt
400A/s, V
DD
V
(BR)DSS
, T
j
T
JMAX.
s
TYPICAL R
DS
(on) = 0.022
s
EXCEPTIONAL dv/dt CAPABILITY
s
LOGIC LEVEL GATE DRIVE
s
ADD SUFFIX "T4" FOR ORDERING IN TAPE &
REEL
s
ADD SUFFIX "-1" FOR ORDERING IN IPAK
s
CHARACTERIZATION ORIENTED FOR
AUTOMOTIVE APPLICATIONS
DESCRIPTION
This Power Mosfet is the latest development of
STMicroelectronics unique "Single Feature
Size
TM"
strip-based process. The resulting tran-
sistor shows extremely high packing density for
low on-resistance, rugged avalance characteris-
tics and less critical alignment steps therefore a re-
markable manufacturing reproducibility.
APPLICATIONS
s
HIGH-EFFICIENCY DC-DC CONVERTERS
s
MOTOR CONTROL, AUDIO AMPLIFIERS
s
DC-DC & DC-AC CONVERTERS
s
AUTOMOTIVE
ABSOLUTE MAXIMUM RATINGS
(
q
) Pulse width limited by safe operating area
TYPE
V
DSS
R
DS(on)
I
D
STD30NF06L
60 V
<0.028
35 A
Symbol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
GS
= 0)
60
V
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
60
V
V
GS
Gate- source Voltage
20
V
I
D
Drain Current (continuous) at T
C
= 25C
35
A
I
D
Drain Current (continuous) at T
C
= 100C
25
A
I
DM
(
l
)
Drain Current (pulsed)
140
A
P
TOT
Total Dissipation at T
C
= 25C
70
W
Derating Factor
0.46
W/C
dv/dt (1)
Peak Diode Recovery voltage slope
25
V/ns
T
stg
Storage Temperature
55 to 175
C
T
j
Operating Junction Temperature
DPAK
3
2
1
1
3
IPAK
INTERNAL SCHEMATIC DIAGRAM
STD30NF06L
2/10
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE = 25 C UNLESS OTHERWISE SPECIFIED)
OFF
ON
(1)
DYNAMIC
Rthj-case
Thermal Resistance Junction-case Max
2.14
C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
100
C/W
T
l
Maximum Lead Temperature For Soldering Purpose
275
C
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
35
A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 C, I
D
= I
AR
, V
DD
= 50 V)
150
mJ
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250 A, V
GS
= 0
60
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
1
A
V
DS
= Max Rating, T
C
= 125 C
10
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= 20 V
100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 A
1
1.7
2.5
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 5 V, I
D
= 18 A
0.025
0.03
V
GS
= 10 V, I
D
= 18 A
0.022
0.028
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(1)
Forward Transconductance
V
DS
> =15 V
,
I
D
=15 A
25
S
C
iss
Input Capacitance
V
DS
= 25 V, f = 1 MHz, V
GS
= 0
1600
pF
C
oss
Output Capacitance
215
pF
C
rss
Reverse Transfer
Capacitance
60
pF
3/10
STD30NF06L
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
Turn-on Delay Time
V
DD
= 30 V, I
D
= 18 A
R
G
= 4.7
V
GS
= 4.5 V
(see test circuit, Figure 3)
30
ns
t
r
Rise Time
105
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 48 V, I
D
= 38 A,
V
GS
= 5 V
23
7
10
31
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(off)
t
f
Turn-off-Delay Time
Fall Time
V
DD
= 30 V, I
D
= 18 A,
R
G
= 4.7
,
V
GS
= 4.5 V
(see test circuit, Figure 3)
65
25
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
Source-drain Current
35
A
I
SDM
(2)
Source-drain Current (pulsed)
140
A
V
SD
(1)
Forward On Voltage
I
SD
= 35 A, V
GS
= 0
1.5
V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 38 A, di/dt = 100 A/s,
V
DD
= 15 V, T
j
= 150C
(see test circuit, Figure 5)
70
140
4
ns
nC
A
Normalized Thermal Impedence
Safe Operating Area
STD30NF06L
4/10
Output Characteristics
Gate Charge vs Gate-source Voltage
Transconductance
Static Drain-source On Resistance
Transfer Characteristics
Capacitance Variations
5/10
STD30NF06L
Normalized Gate Threshold Voltage vs
Temperature
Normalized Drain-Source Breakdown vs
Temperature
Source-drain Diode Forward Characteristics
Normalized On Resistance vs Temperature
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