1/9
October 2001
STD35NF06
N-CHANNEL 60V - 0.018
- 35A DPAK
STripFETTMII MOSFET
(1)I
SD
35A, di/dt
100A/s, V
DD
V
(BR)DSS
, T
j
T
JMAX.
INTERNAL SCHEMATIC DIAGRAM
s
TYPICAL R
DS
(on) = 0.018
s
EXTREMELY HIGH dv/dt CAPABILITY
s
100% AVALANCHE TESTED
s
GATE CHARGE MINIMIZED
DESCRIPTION
This Power Mosfet is the latest development of ST-
Microelectronics unique "Single Feature SizeTM"
strip-based process. The resulting transistor shows
extremely high packing density for low on-resis-
tance, rugged avalance characteristics and less crit-
ical alignment steps therefore a remarkable
manufacturing reproducibility.
APPLICATIONS
s
SOLENOID AND RELAY DRIVERS
s
MOTOR CONTROL, AUDIO AMPLIFIERS
s
DC-AC CONVERTERS
s
AUTOMOTIVE ENVIRONMENT
ABSOLUTE MAXIMUM RATINGS
()Pulse width limited by safe operating area
TYPE
V
DSS
R
DS(on)
I
D
STD35NF06
60 V
< 0.024
35 A
Symbol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
GS
= 0)
60
V
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
60
V
V
GS
Gate- source Voltage
20
V
I
D
Drain Current (continuos) at T
C
= 25C
35
A
I
D
Drain Current (continuos) at T
C
= 100C
24.5
A
I
DM
(
q
)
Drain Current (pulsed)
140
A
P
TOT
Total Dissipation at T
C
= 25C
55
W
Derating Factor
0.37
W/C
dv/dt (1)
Peak Diode Recovery voltage slope
5
V/ns
T
stg
Storage Temperature
55 to 175
C
T
j
Max. Operating Junction Temperature
DPAK
1
3
STD35NF06
2/9
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE = 25 C UNLESS OTHERWISE SPECIFIED)
OFF
ON
(1)
DYNAMIC
Rthj-case
Thermal Resistance Junction-case Max
2.7
C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
100
C/W
T
l
Maximum Lead Temperature For Soldering Purpose
275
C
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
17.5
A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 C, I
D
= I
AR
, V
DD
= 50 V)
130
mJ
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250 A, V
GS
= 0
60
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
1
A
V
DS
= Max Rating, T
C
= 125 C
10
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= 20V
100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250A
2
3
4
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10V, I
D
= 17.5 A
0.018
0.024
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(1)
Forward Transconductance
V
DS
> I
D(on)
x R
DS(on)max,
I
D
= 17.5 A
13
S
C
iss
Input Capacitance
V
DS
= 25V, f = 1 MHz, V
GS
= 0
1530
pF
C
oss
Output Capacitance
300
pF
C
rss
Reverse Transfer
Capacitance
105
pF
3/9
STD35NF06
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
Turn-on Delay Time
V
DD
= 30 V, I
D
= 27.5 A
R
G
= 4.7
V
GS
= 10 V
(see test circuit, Figure 3)
16
ns
t
r
Rise Time
8
ns
Q
g
Total Gate Charge
V
DD
= 48V, I
D
= 55 A,
V
GS
= 10V
44.5
60
nC
Q
gs
Gate-Source Charge
10.5
nC
Q
gd
Gate-Drain Charge
17.5
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(off)
t
f
Turn-off-Delay Time
Fall Time
V
DD
= 30V, I
D
= 27.5A,
R
G
= 4.7
,
V
GS
= 10V
(see test circuit, Figure 3)
36
15
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
Source-drain Current
35
A
I
SDM
(2)
Source-drain Current (pulsed)
140
A
V
SD
(1)
Forward On Voltage
I
SD
= 35 A, V
GS
= 0
1.5
V
t
rr
Reverse Recovery Time
I
SD
= 35 A, di/dt = 100A/s
V
DD
= 20V, T
j
= 150C
(see test circuit, Figure 5)
75
ns
Q
rr
Reverse Recovery Charge
170
nC
I
RRM
Reverse Recovery Current
4.5
A
Safe Operating Area
Thermal Impedence
STD35NF06
4/9
Static Drain-source On Resistance
Transfer Characteristics
Output Characteristics
Transconductance
Gate Charge vs Gate-source Voltage
Capacitance Variations
5/9
STD35NF06
Source-drain Diode Forward Characteristics
Normalized On Resistance vs Temperature
Normalized Gate Threshold Voltage vs Temp.
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