STD38NF03L
N - CHANNEL 30V - 0.013
- 38A TO-252
STripFET
TM
POWER MOSFET
PRELIMINARY DATA
s
TYPICAL R
DS(on)
= 0.013
s
OPTIMIZED FOR HIGH SWTICHING
OPERATIONS
s
LOW THRESHOLD DRIVE
s
ADD SUFFIX "T4" FOR ORDERING IN TAPE
& REEL
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics
unique
"Single
Feature
Size
TM
" strip-based process. The resulting transi-
stor shows extremely high packing density for low
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a re-
markable manufacturing reproducibility.
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
MOTOR CONTROL, AUDIO AMPLIFIERS
s
DC-DC & DC-AC CONVERTERS
INTERNAL SCHEMATIC DIAGRAM
March 2000
ABSOLUTE MAXIMUM RATINGS
Symb ol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
GS
= 0)
30
V
V
DGR
Drain- gate Voltage (R
GS
= 20 k
)
30
V
V
G S
G ate-source Volt age
20
V
I
D
(
*
)
Drain Current (continuous) at T
c
= 25
o
C
38
A
I
D
Drain Current (continuous) at T
c
= 100
o
C
27
A
I
DM
(
)
Drain Current (pulsed)
152
A
P
tot
T otal Dissipation at T
c
= 25
o
C
45
W
Derating Factor
0.3
W /
o
C
T
st g
Storage Temperature
-65 to 175
o
C
T
j
Max. Operating Junction Temperature
175
o
C
(
) Pulse width limited by safe operating area
(
*
)Value limited by the package
TYPE
V
DSS
R
DS(o n)
I
D
STD38NF03L
30 V
< 0.019
38 A
1
3
DPAK
TO-252
(Suffix "T4")
1/6
THERMAL DATA
R
th j-p c b
R
thj -amb
R
t hj-s ink
T
l
Thermal Resistance Junction-PC Board
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
T yp
Maximum Lead Temperature F or Soldering Purpose
3.33
62. 5
1.5
300
o
C/W
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
OFF
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250
A
V
GS
= 0
30
V
I
DSS
Zero Gat e Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rat ing
V
DS
= Max Rat ing
T
c
= 125
o
C
1
10
A
A
I
G SS
Gat e-body Leakage
Current (V
DS
= 0)
V
GS
=
20 V
100
nA
ON (
)
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
V
G S(th)
Gat e Threshold Voltage V
DS
= V
GS
I
D
= 250
A
1
1.7
2. 5
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10 V
I
D
= 19 A
V
GS
= 4. 5 V
I
D
= 19 A
0.013
0.016
0.019
0.023
I
D(o n)
On State Drain Current
V
DS
> I
D(o n)
x R
DS(on )ma x
V
GS
= 10 V
38
A
DYNAMIC
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
g
f s
(
)
Forward
Transconductance
V
DS
> I
D(o n)
x R
DS(on )ma x
I
D
= 19 A
28
S
C
iss
C
os s
C
rss
Input Capacitance
Out put Capacitance
Reverse Transfer
Capacitance
V
DS
= 20 V
f = 1 MHz
V
GS
= 0 V
1450
390
155
pF
pF
pF
STD38NF03L
2/6
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Delay T ime
Rise Time
V
DD
= 15 V
I
D
= 27.5 A
R
G
= 4.7
V
G S
= 4.5 V
(Resistive Load, see fig. 3)
25
280
ns
ns
Q
g
Q
gs
Q
gd
Tot al G ate Charge
Gat e-Source Charge
Gat e-Drain Charge
V
DD
= 24 V I
D
= 55 A V
GS
= 4.5 V
27
11
12
36
nC
nC
nC
SWITCHING OFF
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
t
d(of f)
t
f
Turn-off Delay T ime
Fall T ime
V
DD
= 15 V
I
D
= 27.5 A
R
G
= 4.7
V
G S
= 4.5 V
(Resistive Load, see fig. 3)
60
240
ns
ns
t
r (Voff)
t
f
t
c
Off -volt age Rise T ime
Fall T ime
Cross-over Time
V
CLAM P
= 24 V
I
D
= 55 A
R
G
= 4.7
V
GS
= 4. 5 V
(Induct ive Load, see fig. 5)
140
200
350
ns
ns
ns
SOURCE DRAIN DIODE
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(
)
Source-drain Current
Source-drain Current
(pulsed)
38
152
A
A
V
SD
(
)
Forward On Voltage
I
SD
= 38 A
V
GS
= 0
1. 5
V
t
rr
Q
rr
I
RRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I
SD
= 55 A
di/dt = 100 A/
s
V
DD
= 15 V
T
j
= 150
o
C
(see t est circuit, f ig. 5)
45
52
2.3
ns
nC
A
(
) Pulsed: Pulse duration = 300
s, duty cycle 1.5 %
(
) Pulse width limited by safe operating area
STD38NF03L
3/6
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuits For
Resistive Load
Fig. 2: Unclamped Inductive Waveform
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
STD38NF03L
4/6
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
2.2
2.4
0.086
0.094
A1
0.9
1.1
0.035
0.043
A2
0.03
0.23
0.001
0.009
B
0.64
0.9
0.025
0.035
B2
5.2
5.4
0.204
0.212
C
0.45
0.6
0.017
0.023
C2
0.48
0.6
0.019
0.023
D
6
6.2
0.236
0.244
E
6.4
6.6
0.252
0.260
G
4.4
4.6
0.173
0.181
H
9.35
10.1
0.368
0.397
L2
0.8
0.031
L4
0.6
1
0.023
0.039
==
D
L2
L4
13
==
B
E
==
B2
G
2
A
C2
C
H
A1
DETAIL "A"
A2
DETAIL "A"
TO-252 (DPAK) MECHANICAL DATA
0068772-B
STD38NF03L
5/6
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