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September 2004
NEW DATASHEET ACCORDING TO PCN DSG-TRA/04/532
STD5N20L
N-CHANNEL 200V - 0.65
- 5A DPAK
STripFETTM MOSFET
Table 1: General Features
s
TYPICAL R
DS
(on) = 0.65
@ 5V
s
CONDUCTION LOSSES REDUCED
s
LOW INPUT CAPACIATNCE
s
LOW THRESHOLD DEVICE
DESCRIPTION
The STD5N20L utilizes the latest advanced de-
sign rules of ST's proprietary STripFETTM technol-
ogy. This is suitable for the most demanding DC
Motor Control and lighting application.
APPLICATIONS
s
UPS AND MOTOR CONTROL
s
LIGHTING
Table 2: Order Codes
Figure 1: Package
Figure 2: Internal Schematic Diagram
TYPE
V
DSS
R
DS(on)
I
D
Pw
STD5N20L
200 V
< 0.7
5 A
33 W
1
3
DPAK
SALES TYPE
MARKING
PACKAGE
PACKAGING
STD5N20LT4
D5N20L
DPAK
TAPE & REEL
Rev. 3
STD5N20L
2/10
Table 3: Absolute Maximum ratings
( )
Pulse width limited by safe operating area
Table 4: Thermal Data
ELECTRICAL CHARACTERISTICS (T
CASE
=25C UNLESS OTHERWISE SPECIFIED)
Table 5: On/Off
Symbol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
GS
= 0)
200
V
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
200
V
V
GS
Gate- source Voltage
20
V
I
D
Drain Current (continuous) at T
C
= 25C
5
A
I
D
Drain Current (continuous) at T
C
= 100C
3.6
A
I
DM
( )
Drain Current (pulsed)
20
A
P
TOT
Total Dissipation at T
C
= 25C
33
W
Derating Factor
0.27
W/C
T
stg
Storage Temperature
55 to 150
C
T
j
Operating Junction Temperature
Rthj-case
Thermal Resistance Junction-case Max
3.75
C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
100
C/W
T
l
Maximum Lead Temperature For Soldering Purpose
275
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250 A, V
GS
= 0
200
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
1
A
V
DS
= Max Rating, T
C
= 125C
10
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= 20V
100
nA
V
GS(th)
Gate Threshold Voltage V
DS
= V
GS
, I
D
= 50A
1
2.5
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 5 V, I
D
= 2.5 A
0.65
0.7
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STD5N20L
Table 6: Dynamic
Table 7: Source Drain Diode
(1) Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
(2) Starting T
j
=25 C, I
d
= 5 A, V
DD
= 50 V
(*) Pulse width limited by safe operating area
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(2)
Forward Transconductance
V
DS
= 15 V, I
D =
5 A
6.5
S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
= 25V, f = 1 MHz, V
GS
= 0
242
44
6
pF
pF
pF
t
d(on)
t
r
t
d(off)
t
f
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
V
DD
= 100 V, I
D
= 2.5 A
R
G
= 4.7
,
V
GS
= 5V
(Resistive Load see Figure 14)
11.5
21.5
14
15.5
ns
ns
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 160 V, I
D
= 5 A,
V
GS
= 5V
5
1.5
3
6
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
Source-drain Current
5
A
I
SDM
(*)
Source-drain Current (pulsed)
20
A
V
SD
(1)
Forward On Voltage
I
SD
= 5 A, V
GS
= 0
1.5
V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 5 A, di/dt = 100 A/s,
V
DD
= 100 V, T
j
= 25C
(see test circuit, see Figure 15)
93
237
5.1
ns
nC
A
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 5 A, di/dt = 100 A/s,
V
DD
= 100 V, T
j
= 150C
(see test circuit, see Figure 15)
97
286
5.9
ns
nC
A
STD5N20L
4/10
Figure 3: Safe Operating Area
Figure 4: Output Characteristics
Figure 5: Transconductance
Figure 6: Thermal Impedance
Figure 7: Transfer Characteristics
Figure 8: Static Drain-source On Resistance
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STD5N20L
Figure 9: Gate Charge vs Gate-source Voltage
Figure 10: Normalized Gate Thereshold Volt-
age vs Temperature
Figure 11: Source-Drain Diode Forward Char-
acteristics
Figure 12: Capacitance Variations
Figure 13: Normalized On Resistance vs Tem-
perature
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