1/9
October 2002
STD60NF06
N-CHANNEL 60V - 0.014
- 60A DPAK
STripFETTM II POWER MOSFET
(1) I
SD
60A, di/dt
200 A/
s, V
DD
24V, Tj
T
jMAX
s
TYPICAL R
DS
(on) = 0.014
s
EXCEPTIONAL dv/dt CAPABILITY
s
100% AVALANCHE TESTED
s
APPLICATION ORIENTED
CHARACTERIZATION
DESCRIPTION
This Power Mosfet series realized with STMicro-
electronics unique STripFET process has specifical-
ly been designed to minimize input capacitance and
gate charge. It is therefore suitable as primary
switch in advanced high-efficiency isolated DC-DC
converters for Telecom and Computer application. It
is also intended for any application with low gate
charge drive requirements.
APPLICATIONS
s
HIGH-EFFICIENCY DC-DC CONVERTERS
s
UPS AND MOTOR CONTROL
s
AUTOMOTIVE
ABSOLUTE MAXIMUM RATINGS
(
q
) Pulse width limited by safe operating area
TYPE
V
DSS
R
DS(on)
I
D
STD60NF06
60 V
< 0.016
60A
Symbol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
GS
= 0)
60
V
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
60
V
V
GS
Gate- source Voltage
20
V
I
D
Drain Current (continuous) at T
C
= 25C
60
A
I
D
Drain Current (continuous) at T
C
= 100C
42
A
I
DM
(
l
)
Drain Current (pulsed)
240
A
P
TOT
Total Dissipation at T
C
= 25C
110
W
Derating Factor
0.73
W/C
dv/dt (1)
Peak Diode Recovery voltage slope
4
V/ns
T
stg
Storage Temperature
55 to 175
C
T
j
Operating Junction Temperature
DPAK
1
3
(Suffix "T4")
INTERNAL SCHEMATIC DIAGRAM
STD60NF06
2/9
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (T
CASE
= 25 C UNLESS OTHERWISE SPECIFIED)
OFF
ON
(1)
DYNAMIC
Rthj-case
Thermal Resistance Junction-case Max
1.36
C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
100
C/W
T
l
Maximum Lead Temperature For Soldering Purpose
275
C
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
30
A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 C, I
D
= I
AR
, V
DD
= 30 V)
350
mJ
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250 A, V
GS
= 0
60
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
1
A
V
DS
= Max Rating, T
C
= 125 C
10
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= 20V
100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 A
2
4
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10 V, I
D
= 30 A
0.014
0.016
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(1)
Forward Transconductance
V
DS
=15 V , I
D
= 30 A
20
S
C
iss
Input Capacitance
V
DS
= 25 V, f = 1 MHz, V
GS
= 0
1810
pF
C
oss
Output Capacitance
360
pF
C
rss
Reverse Transfer
Capacitance
125
pF
3/9
STD60NF06
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
Turn-on Delay Time
V
DD
= 30 V, I
D
= 30 A
R
G
= 4.7
, V
GS
= 10 V
(see test circuit, Figure 3)
16
ns
t
r
Rise Time
108
ns
Q
g
Total Gate Charge
V
DD
= 48 V, I
D
=60 A
V
GS
= 10 V
49
66
nC
Q
gs
Gate-Source Charge
18
nC
Q
gd
Gate-Drain Charge
14
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(off)
t
f
Turn-off-Delay Time
Fall Time
V
DD
= 30 V, I
D
= 30 A,
R
G
= 4.7
,
V
GS
= 10 V
(see test circuit, Figure 3)
43
20
ns
ns
t
d(off)
t
f
t
c
Off-voltage Rise Time
Fall Time
Cross-over Time
Vclamp =48 V, I
D
= 60 A
R
G
= 4.7
,
V
GS
= 10 V
(see test circuit, Figure 3)
40
12
21
ns
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
Source-drain Current
60
A
I
SDM
(2)
Source-drain Current (pulsed)
240
A
V
SD
(1)
Forward On Voltage
I
SD
= 60 A, V
GS
= 0
1.3
V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 60 A, di/dt = 100A/s,
V
DD
= 25V, T
j
= 150C
(see test circuit, Figure 5)
73
182
5
ns
nC
A
STD60NF06
4/9
Safe Operating Area for DPAK
Static Drain-source On Resistance
Thermal Impedence for DPAK
Transconductance
Transfer Characteristics
Output Characteristics
5/9
STD60NF06
Normalized Gate Threshold Voltage vs
Temperature
Source-drain Diode Forward Characteristics
Gate Charge vs Gate-source Voltage
Capacitance Variations
Normalized On Resistance vs Temperature
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