1/9
April 2002
STD60NF3LL
N-CHANNEL 30V - 0.0075
- 60A DPAK
STripFETTM II POWER MOSFET
(1) Starting T
j
=25C, I
D
=30A, V
DD
=27.5V
s
TYPICAL R
DS
(on) = 0.0075
s
OPTIMAL RDS(ON) x Qg TRADE-OFF @ 4.5V
s
CONDUCTION LOSSES REDUCED
s
SWITCHING LOSSES REDUCED
s
ADD SUFFIX "T4" FOR ORDERING IN TAPE &
REEL
DESCRIPTION
This application specific Power Mosfet is the third
genaration of STMicroelectronics unique "Single
Feature Size
TM"
strip-based process. The result-
ing transistor shows the best trade-off between on-
resistance ang gate charge. When used as high
and low side in buck regulators, it gives the best
performance in terms of both conduction and
switching losses. This is extremely important for
motherboards where fast switching and high effi-
ciency are of paramount importance.
APPLICATIONS
s
SPECIFICALLY DESIGNED AND OPTIMISED
FOR HIGH EFFICIENCY DC/DC
CONVERTERS
ABSOLUTE MAXIMUM RATINGS
(
q
) Pulse width limited by safe operating area
TYPE
V
DSS
R
DS(on)
I
D
STD60NF3LL
30V
<0.0095
60A
Symbol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
GS
= 0)
30
V
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
30
V
V
GS
Gate- source Voltage
16
V
I
D
Drain Current (continuos) at T
C
= 25C
60
A
I
D
Drain Current (continuos) at T
C
= 100C
43
A
I
DM
(
l
)
Drain Current (pulsed)
240
A
P
TOT
Total Dissipation at T
C
= 25C
100
W
Derating Factor
0.67
W/C
E
AS
(1)
Single Pulse Avalanche Energy
700
mJ
T
stg
Storage Temperature
55 to 175
C
T
j
Operating Junction Temperature
DPAK
1
3
TO-252
INTERNAL SCHEMATIC DIAGRAM
STD60NF3LL
2/9
THERMAL DATA
ELECTRICAL CHARACTERISTICS (TCASE = 25 C UNLESS OTHERWISE SPECIFIED)
OFF
ON
(1)
DYNAMIC
Rthj-case
Thermal Resistance Junction-case Max
1.5
C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
100
C/W
T
l
Maximum Lead Temperature For Soldering Purpose
300
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250 A, V
GS
= 0
30
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
1
A
V
DS
= Max Rating, T
C
= 125 C
10
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= 16V
100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250A
1
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10 V, I
D
= 30 A
V
GS
= 4.5 V , I
D
= 30 A
0.0075
0.0085
0.0095
0.0105
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(1)
Forward Transconductance
V
DS
=15 V
,
I
D
=30 A
30
S
C
iss
Input Capacitance
V
DS
= 25V, f = 1 MHz, V
GS
= 0
2210
pF
C
oss
Output Capacitance
635
pF
C
rss
Reverse Transfer
Capacitance
138
pF
3/9
STD60NF3LL
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
Turn-on Delay Time
V
DD
= 15V, I
D
= 30A
R
G
= 4.7
V
GS
= 4.5V
(see test circuit, Figure 3)
22
ns
t
r
Rise Time
130
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 24V, I
D
= 60A,
V
GS
= 4.5V
30
9
12.5
40
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(off)
t
f
Turn-off-Delay Time
Fall Time
V
DD
= 15V, I
D
= 30A,
R
G
= 4.7
,
V
GS
= 4.5V
(see test circuit, Figure 3)
36.5
36.5
ns
ns
t
d(off)
t
f
t
c
Off-voltage Rise Time
Fall Time
Cross-over Time
Vclamp =24V, I
D
=30A
R
G
= 4.7
,
V
GS
= 4.5V
(see test circuit, Figure 5)
32
23
40
ns
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
Source-drain Current
60
A
I
SDM
(1)
Source-drain Current (pulsed)
240
A
V
SD
(2)
Forward On Voltage
I
SD
= 60A, V
GS
= 0
1.2
V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 60A, di/dt = 100A/s,
V
DD
= 15V, T
j
= 150C
(see test circuit, Figure 5)
65
105
3.4
ns
nC
A
Thermal Impedence
Safe Operating Area
STD60NF3LL
4/9
Transfer Characteristics
Gate Charge vs Gate-source Voltage
Capacitance Variations
Transconductance
Static Drain-source On Resistance
Output Characteristics
5/9
STD60NF3LL
Source-drain Diode Forward Characteristics
Normalized On Resistance vs Temperature
Normalized Gate Thereshold Voltage vs Temp.
PDF 
ZIP