STD616A-1
HIGH VOLTAGE NPN POWER TRANSISTOR
s
REVERSE PINS OUT Vs STANDARD IPAK
(TO-251) PACKAGE
s
HIGH VOLTAGE CAPABILITY
s
HIGH DC CURRENT GAIN
s
THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE
s
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
APPLICATIONS:
s
SWITCH MODE POWER SUPPLIES
DESCRIPTION
The STD616A-1 is manufactured using High
Voltage Multi Epitaxial Planar technology for high
switching speeds and high voltage withstand
capability.
INTERNAL SCHEMATIC DIAGRAM
April 1999
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
CES
Collector-Emit ter Volt age (V
BE
= 0)
1000
V
V
CEO
Collector-Emit ter Volt age (I
B
= 0)
450
V
V
EBO
Emitt er-Base Voltage (I
C
= 0)
12
V
I
C
Collector Current
1. 6
A
I
CM
Collector Peak Current (t
p
< 5 ms)
2. 4
A
I
B
Base Current
0. 8
A
I
BM
Base Peak Current (t
p
< 5 ms)
1. 2
A
P
t ot
Tot al Dissipation at T
c
= 25
o
C
20
W
T
stg
St orage Temperature
-65 t o 150
o
C
T
j
Max. Operat ing Junction Temperat ure
150
o
C
3
2
1
IPAK
TO-251
1/5
THERMAL DATA
R
t hj-ca se
Thermal Resistance Junction-case
Max
6.25
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
I
CES
Collector Cut -of f
Current (V
BE
= 0 V)
V
CE
= 1000 V
V
CE
= 1000 V
T
j
= 125
o
C
50
0.5
A
mA
V
CEO (sus)
Collector-Emit ter
Sustaining Voltage
I
C
= 100 mA
L = 25 mH
450
V
V
BEO
Collector-Base
Sustaining Voltage
I
C
= 1 mA
12
V
V
CE(sat )
Collector-Emit ter
Saturation Voltage
I
C
= 250 mA
I
B
= 65 mA
I
C
= 0. 8 A
I
B
= 250 mA
0.3
0.5
V
V
V
BE(s at)
Base-Emitt er
Saturation Voltage
I
C
= 250 mA
I
B
= 65 mA
I
C
= 0. 8 A
I
B
= 250 mA
1.0
1.2
V
V
h
F E
DC Current Gain
I
C
= 200
A
V
CE
= 5 V
I
C
= 300 mA
V
CE
= 5 V
I
C
= 480 mA
V
CE
= 5 V
I
C
= 1. 6 A
V
CE
= 5 V
17
25
12
4
t
on
t
s
t
f
RESI STIVE LO AD
Turn O n Time
St orage Time
Fall Time
V
CC
= 250 V
I
C
= 250 mA
I
B1
= 65 mA
I
B2
= -130 mA
0.2
5
0.65
s
s
s
t
on
t
s
t
f
RESI STIVE LO AD
Turn O n Time
St orage Time
Fall Time
V
CC
= 250 V
I
C
= 0.8 A
I
B1
= 160 mA
I
B2
= -0.4 A
1
2.5
0.35
s
s
s
t
s
t
f
INDUCTIVE LO AD
St orage Time
Fall Time
V
c l
= 300 V
I
C
= 250 mA
I
B1
= 65 mA
I
B2
= -130 mA
L = 200
H
5
0.5
s
s
t
s
t
f
INDUCTIVE LO AD
Turn O n Time
St orage Time
Fall Time
V
c l
= 300 V
I
C
= 0.8 A
I
B1
= 160 mA
I
B2
= -0.4 A
L = 200
H
2.5
0.25
s
s
Pulsed: Pulse duration = 300
s, duty cycle 1.5 %
STD616A-1
2/5
Safe Operating Area
Reverse Biased SOA
Derating Curve
STD616A-1
3/5
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
2.20
2.40
0.087
0.094
A1
0.90
1.10
0.035
0.043
A3
0.70
1.30
0.028
0.051
B
0.64
0.90
0.025
0.035
B2
5.20
5.40
0.204
0.213
B3
0.85
0.033
B5
0.30
0.012
B6
0.95
0.037
C
0.45
0.60
0.018
0.024
C2
0.48
0.60
0.019
0.024
D
6.00
6.20
0.237
0.244
E
6.40
6.60
0.252
0.260
G
4.40
4.60
0.173
0.181
H
15.90
16.30
0.626
0.642
L
9.00
9.40
0.354
0.370
L1
0.80
1.20
0.031
0.047
L2
0.80
1.00
0.031
0.039
V1
10
o
10
o
P032N_E
TO-251 (IPAK) MECHANICAL DATA
STD616A-1
4/5
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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STD616A-1
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