STD93003
HIGH VOLTAGE FAST-SWITCHING
PNP POWER TRANSISTOR
s
REVERSE PINS OUT Vs STANDARD IPAK
(TO-251) / DPAK (TO-252) PACKAGES
s
MEDIUM VOLTAGE CAPABILITY
s
LOW SPREAD OF DYNAMIC PARAMETERS
s
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
s
VERY HIGH SWITCHING SPEED
s
SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL (Suffix
"T4")
s
THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (Suffix "-1")
APPLICATIONS:
s
ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
DESCRIPTION
The device is manufactured using high voltage
Multi-Epitaxial Planar technology for high
switching speeds and medium voltage capability.
It uses a Cellular Emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.
The STD93003 is expressly designed for a new
solution to be used in compact fluorescent lamps,
where it is coupled with the STD83003, its
complementary NPN transistor.
INTERNAL SCHEMATIC DIAGRAM
October 2002
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
CES
Collector-Emitter Voltage (V
BE
= 0)
-500
V
V
CEO
Collector-Emitter Voltage (I
B
= 0)
-400
V
V
EBO
Emitter-Base Voltage
(I
C
= 0, I
B
= -0.75 A, t
p
< 10
s, T
j
< 150
o
C)
V
(BR)EBO
V
I
C
Collector Current
-1.5
A
I
CM
Collector Peak Current (t
p
< 5 ms)
-3
A
I
B
Base Current
-0.75
A
I
BM
Base Peak Current (t
p
< 5 ms)
-1.5
A
P
tot
Total Dissipation at T
c
= 25
o
C
20
W
T
stg
Storage Temperature
-65 to 150
o
C
T
j
Max. Operating Junction Temperature
150
o
C
3
2
1
IPAK
TO-251
(Suffix "-1")
1
3
DPAK
TO-252
(Suffix "T4")
1/8
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
6.25
100
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CES
Collector Cut-off
Current (V
BE
= 0)
V
CE
= -500V
V
CE
= -500V T
j
= 125
o
C
-1
-5
mA
mA
V
(BR)EBO
Emitter Base
Breakdown Voltage
(I
C
= 0)
I
E
= -10 mA
-5
-10
V
V
CEO(sus)
Collector-Emitter
Sustaining Voltage
(I
B
= 0)
I
C
= -10 mA
L = 25 mH
-400
V
V
CE(sat)
Collector-Emitter
Saturation Voltage
I
C
= -0.5 A I
B
= -0.1 A
I
C
= -0.35 A I
B
= -50 mA
-0.5
-0.5
V
V
V
BE(sat)
Base-Emitter
Saturation Voltage
I
C
= -0.5 A I
B
= -0.1 A
-1
V
h
FE
DC Current Gain
I
C
= -10 mA V
CE
= -5 V
I
C
= -0.35 A V
CE
= -5 V
I
C
= -1 A V
CE
= -5 V
10
16
4
25
32
t
r
t
s
t
f
RESISTIVE LOAD
Rise Time
Storage Time
Fall Time
I
C
= -0.35 A V
CC
= 125 V
I
B1
= -70 mA I
B2
= 70 mA
T
p
25
s (see Figure 2)
1.5
90
2.2
0.1
2.9
ns
s
s
t
s
t
f
INDUCTIVE LOAD
Storage Time
Fall Time
I
C
= -0.5 A I
B1
= -0.1 A
V
BE(o ff)
= 5 V L = 10 mH
V
clamp
= 300 V (see Figure 1)
400
40
ns
ns
E
sb
Avalanche Energy
L = 4 mH C = 1.8 nF
I
BR
2.5 A 25
o
C < T
C
< 125
o
C
12
mJ
Pulsed: Pulse duration = 300
s, duty cycle = 1.5 %.
STD93003
2/8
Figure 1: Inductive Load Switching Test Circuit.
Figure 2: Resistive Load Switching Test Circuit.
1) Fast electronic switch
2) Non-inductive Resistor
3) Fast recovery rectifier
1) Fast electronic switch
2) Non-inductive Resistor
STD93003
5/8
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