STE26N50
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR IN ISOTOP PACKAGE
s
HIGH CURRENT POWER MODULE
s
AVALANCHE RUGGED TECHNOLOGY
(SEE IRFP450 FOR RATING)
s
VERY LARGE SOA - LARGE PEAK POWER
CAPABILITY
s
EASY TO MOUNT
s
SAME CURRENT CAPABILITY FOR THE
TWO SOURCE TERMINALS
s
EXTREMELY LOW R
th
JUNCTION TO CASE
s
VERY LOW DRAIN TO CASE CAPACITANCE
s
VERY LOW INTERNAL PARASITIC
INDUCTANCE (TYPICALLY < 5 nH)
s
ISOLATED PACKAGE UL RECOGNIZED
(FILE No E81743)
INDUSTRIAL APPLICATIONS:
s
SMPS & UPS
s
MOTOR CONTROL
s
WELDING EQUIPMENT
s
OUTPUT STAGE FOR PWM, ULTRASONIC
CIRCUITS
July 1993
TYPE
V
DSS
R
DS ( on)
I
D
STE26N50
500 V
< 0. 2
26 A
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Uni t
V
D S
Drain-Source Volt age (V
GS
= 0)
500
V
V
DG R
Drain-Gate Voltage (R
GS
= 20 k
)
500
V
V
GS
Gate-Source Voltage
20
V
I
D
Drain Current (cont inuous) at T
c
= 25
o
C
26
A
I
D
Drain Current (cont inuous) at T
c
= 100
o
C
17
A
I
D M
(
)
Drain Current (pulsed)
104
A
P
tot
Total Dissipation at T
c
= 25
o
C
300
W
Derating Factor
2.4
W/
o
C
T
stg
St orage Temperat ure
-55 to 150
o
C
T
j
Max. Operat ing Junction Temperature
150
o
C
V
ISO
I nsulat ion Withstand Voltage (AC-RMS)
2500
V
(
) Pulse width limited by safe operating area
3
2
1
4
INTERNAL SCHEMATIC DIAGRAM
ISOTOP
1/8
THERMAL DATA
R
thj-cas e
R
thc-h
Thermal Resist ance Junct ion-case
Max
Thermal Resist ance Case-heatsink With Conduct ive
Grease Applied
Max
0.42
0.05
o
C/ W
o
C/ W
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
OFF
Symbol
Parameter
Test Condi tions
Mi n.
Typ.
Max.
Unit
V
( BR)DSS
Drain-source
Breakdown Voltage
I
D
= 1 mA
V
GS
= 0 V
500
V
I
DS S
Zero Gate Volt age
Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating x 0.8
T
c
= 125
o
C
200
1
A
mA
I
G SS
Gate-body Leakage
Current (V
D S
= 0)
V
GS
=
20 V
200
nA
ON (
)
Symbol
Parameter
Test Condi tions
Mi n.
Typ.
Max.
Unit
V
G S(th)
Gate Threshold Voltage V
DS
= V
GS
I
D
= 1 mA
2
4
V
R
DS( on)
St atic Drain-source On
Resist ance
V
GS
= 10V
I
D
= 13 A
0.2
DYNAMIC
Symbol
Parameter
Test Condi tions
Mi n.
Typ.
Max.
Unit
g
fs
(
)
Forward
Transconductance
V
DS
= 15 V
I
D
= 13 A
12
S
C
iss
C
oss
C
rss
I nput Capacitance
Output Capacit ance
Reverse Transfer
Capacitance
V
DS
= 25 V
f = 1 MHz
V
G S
= 0 V
6
1200
500
nF
pF
pF
SWITCHING ON
Symbol
Parameter
Test Condi tions
Mi n.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Time
Rise Time
V
DD
= 250 V
I
D
= 13 A
R
G
= 4.7
V
GS
= 10 V
(see test circuit, figure 1)
60
80
ns
ns
(di/dt)
on
Turn-on Current Slope
V
DD
= 400 V
I
D
= 26 A
R
G
= 4.7
V
GS
= 10 V
(see test circuit, figure 3)
450
A/
s
Q
g
Total Gate Charge
V
DD
= 400 V
I
D
= 26 A
V
GS
= 10 V
275
nC
STE26N50
2/8
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING OFF
Symbol
Parameter
Test Condi tions
Mi n.
Typ.
Max.
Unit
t
r(Vof f)
t
f
t
c
Of f-voltage Rise Time
Fall Time
Cross-over Time
V
DD
= 400 V
I
D
= 26 A
R
G
= 4.7
V
GS
= 10 V
(see test circuit, figure 3)
63
25
85
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Condi tions
Mi n.
Typ.
Max.
Unit
I
S D
I
SD M
(
)
Source-drain Current
Source-drain Current
(pulsed)
26
104
A
A
V
S D
(
)
Forward On Volt age
I
SD
= 26 A
V
G S
= 0
1.4
V
t
rr
Q
rr
I
RRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I
SD
= 26 A
di/dt = 100 A/
s
V
DD
= 100 V
T
j
= 150
o
C
(see test circuit, figure 3)
850
23.5
55
ns
C
A
(
) Pulsed: Pulse duration = 300
s, duty cycle 1.5 %
(
) Pulse width limited by safe operating area
Safe Operating Area
Thermal Impedance
STE26N50
3/8
Derating Curve
Transfer Characteristics
Static Drain-source On Resistance
Output Characteristics
Transconductance
Gate Charge vs Gate-source Voltage
STE26N50
4/8
Capacitance Variations
Normalized Gate Threshold Voltage vs
Temperature
Normalized Breakdown Voltage vs Temperature
Normalized On Resistance vs Temperature
Turn-off Drain-source Voltage Slope
Turn-on Current Slope
STE26N50
5/8
Cross-over Time
Source-drain Diode Forward Characteristics
Fig. 1: Switching Times Test Circuits For
Resistive Load
Fig. 2: Gate Charge Test Circuit
Fig. 3: Test Circuit For Inductive Load Switching
And Diode Recovery Times
STE26N50
6/8
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
11.8
12.2
0.466
0.480
B
8.9
9.1
0.350
0.358
C
1.95
2.05
0.076
0.080
D
0.75
0.85
0.029
0.033
E
12.6
12.8
0.496
0.503
F
25.15
25.5
0.990
1.003
G
31.5
31.7
1.240
1.248
H
4
0.157
J
4.1
4.3
0.161
0.169
K
14.9
15.1
0.586
0.594
L
30.1
30.3
1.185
1.193
M
37.8
38.2
1.488
1.503
N
4
0.157
O
7.8
8.2
0.307
0.322
P
5.5
0.216
B
E
H
O
N
J
K
L
M
F
A
C
G
D
ISOTOP MECHANICAL DATA
0041565
STE26N50
7/8
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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STE26N50
8/8
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