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September 2002
STE48NM50
N-CHANNEL 500V - 0.08
- 48A ISOTOP
MDmeshTMPower MOSFET
n
TYPICAL R
DS
(on) = 0.08
n
HIGH dv/dt AND AVALANCHE CAPABILITIES
n
100% AVALANCHE TESTED
n
LOW INPUT CAPACITANCE AND GATE
CHARGE
n
LOW GATE INPUT RESISTANCE
n
TIGHT PROCESS CONTROL AND HIGH
MANUFACTURING YIELDS
DESCRIPTION
The MDmeshTM
is a new revolutionary MOSFET
technology that associates the Multiple Drain pro-
cess with the Company's PowerMESHTM horizontal
layout. The resulting product has an outstanding low
on-resistance, impressively high dv/dt and excellent
avalanche characteristics. The adoption of the
Company's proprietary strip technique yields overall
dynamic performance that is significantly better than
that of similar competition's products.
APPLICATIONS
The MDmeshTM family is very suitable for increasing
power density of high voltage converters allowing
system miniaturization and higher efficiencies.
ABSOLUTE MAXIMUM RATINGS
()Pulse width limited by safe operating area
TYPE
V
DSS
R
DS(on)
I
D
STE48NM50
500V
< 0.1
48 A
Symbol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
GS
= 0)
500
V
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
500
V
V
GS
Gate- source Voltage
30
V
I
D
Drain Current (continuous) at T
C
= 25C
48
A
I
D
Drain Current (continuous) at T
C
= 100C
30
A
I
DM
(
l
)
Drain Current (pulsed)
192
A
P
TOT
Total Dissipation at T
C
= 25C
450
W
Derating Factor
3.6
W/C
dv/dt (1)
Peak Diode Recovery voltage slope
15
V/ns
T
stg
Storage Temperature
65 to 150
C
T
j
Max. Operating Junction Temperature
150
C
(1) I
SD
48A, di/dt
400A/s, V
DD
V
(BR)DSS
, T
j
T
JMAX.
ISOTOP
INTERNAL SCHEMATIC DIAGRAM
STE48NM50
2/8
THERMAL DATA
(*) with conductive GREASE Applies
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (T
CASE
= 25 C UNLESS OTHERWISE SPECIFIED)
OFF
ON
(1)
DYNAMIC
Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
Rthj-case
Thermal Resistance Junction-case Max
0.28
C/W
Rthc-sink (*)
Thermal Resistance Case-sink Typ
0.05
C/W
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
15
A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 C, I
D
= I
AR
, V
DD
= 50 V)
810
mJ
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250 A, V
GS
= 0
500
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
10
A
V
DS
= Max Rating, T
C
= 125 C
100
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= 30V
100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250A
3
4
5
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10V, I
D
= 24A
0.08
0.1
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(1)
Forward Transconductance
V
DS
> I
D(on)
x R
DS(on)max,
I
D
= 24A
20
S
C
iss
Input Capacitance
V
DS
= 25V, f = 1 MHz, V
GS
= 0
3700
pF
C
oss
Output Capacitance
610
pF
C
rss
Reverse Transfer
Capacitance
50
pF
R
G
Gate Input Resistance
f=1 MHz Gate DC Bias = 0
Test Signal Level = 20mV
Open Drain
1.7
3/8
STE48NM50
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
Turn-on Delay Time
V
DD
= 250V, I
D
= 24 A
R
G
= 4.7
V
GS
= 10 V
(see test circuit, Figure 3)
40
ns
t
r
Rise Time
35
ns
Q
g
Total Gate Charge
V
DD
= 400 V, I
D
= 48 A,
V
GS
= 10 V
87
117
nC
Q
gs
Gate-Source Charge
23
nC
Q
gd
Gate-Drain Charge
42
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
r(Voff)
Off-voltage Rise Time
V
DD
= 400 V, I
D
= 48 A,
R
G
= 4.7
,
V
GS
= 10 V
(see test circuit, Figure 5)
18
ns
t
f
Fall Time
23
ns
t
c
Cross-over Time
44
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
Source-drain Current
48
A
I
SDM
(2)
Source-drain Current (pulsed)
192
A
V
SD
(1)
Forward On Voltage
I
SD
= 48 A, V
GS
= 0
1.5
V
t
rr
Q
rr
I
rrm
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 40 A, di/dt = 100A/s,
V
DD
= 100 V, T
j
= 25C
(see test circuit, Figure 5)
520
7.8
30
ns
C
A
t
rr
Q
rr
I
rrm
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 40 A, di/dt = 100A/s,
V
DD
= 100 V, T
j
= 150C
(see test circuit, Figure 5)
680
11.2
33
ns
C
A
Thermal Impedence
Safe Operating Area
STE48NM50
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Gate Charge vs Gate-source Voltage
Capacitance Variations
Transconductance
Static Drain-source On Resistance
Output Characteristics
Transfer Characteristics
5/8
STE48NM50
Source-drain Diode Forward Characteristics
Normalized On Resistance vs Temperature
Normalized Gate Thereshold Voltage vs Temp.
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